KR-20260062780-A - Substrate processing apparatus and method

KR20260062780AKR 20260062780 AKR20260062780 AKR 20260062780AKR-20260062780-A

Abstract

A substrate processing method for efficiently controlling an induced charge within a substrate is provided. The substrate processing method comprises introducing a first substrate in a first condition into a first chamber, controlling the charge of the first substrate through a first discharge process within the first chamber, and removing the first substrate from the first chamber, introducing a second substrate in a second condition into a second chamber different from the first chamber, controlling the charge of the second substrate through a second discharge process different from the first discharge process within the second chamber, and removing the second substrate from the second chamber.

Inventors

최민호
최찬승
이경진
전재영
김진성
곽근호
성훈제
이동규
채윤병
최용언

Assignees

삼성전자주식회사
(주)넥스틴

Dates

Publication Date: 20260507
Application Date: 20250212
Priority Date: 20241029

Claims (10)

A first substrate of the first condition is introduced into the first chamber, and Controlling the charge of the first substrate through the first discharge process within the first chamber, and Remove the first substrate from the first chamber, and A second substrate of the second condition is introduced into a second chamber different from the first chamber, and In the second chamber, the charge of the second substrate is controlled through a second discharge process different from the first discharge process, and A substrate processing method comprising removing the second substrate from the second chamber.
In paragraph 1, The first substrate includes a first film, and controls the charge within the first film through the first discharge process, and A substrate processing method wherein the second substrate comprises a second film different from the first film, and controls the charge within the second film through the second discharge process.
In paragraph 2, A substrate treatment method in which the first film is an oxide film and the second film is a nitride film.
In paragraph 1, In the first chamber above, a first support, a first lamp disposed on the first support and configured to generate a first charge from a first gas, and a first grid disposed on the first support and configured to receive a first voltage are disposed therein. A method for processing a substrate, wherein a second support, a second lamp disposed on the second support and configured to generate a second charge from a second gas, and a second grid disposed on the second support and configured to receive a second voltage are disposed therein.
In paragraph 4, A substrate processing method in which the magnitude of the first power supplied to the first lamp and the magnitude of the second power supplied to the second lamp are different.
In paragraph 4, The above first discharge process is carried out during the first time period, and A substrate processing method in which the above second discharge process is carried out during a second time different from the above first time.
In paragraph 4, The first power supplied to the first lamp is a fixed value, and A substrate processing method in which the second power supplied to the second lamp is variable according to a recipe.
In Paragraph 7, The second substrate of the second condition above has a photoresist pattern disposed on its uppermost surface, and A substrate processing method in which the above-mentioned second power has a waveform that increases in a stepwise manner.
The substrate is introduced into a wet cleaning chamber, and the substrate is cleaned while spraying a cleaning solution onto the substrate. Subsequently, the substrate is introduced into the first discharge chamber, and the charge within the substrate is controlled according to the first discharge recipe, and Subsequently, the substrate is transferred into a photolithography facility, and a photolithography process is performed. Subsequently, the substrate is introduced into a second discharge chamber different from the first discharge chamber, and the charge within the substrate is controlled according to a second discharge recipe different from the first discharge recipe, and Subsequently, a substrate processing method comprising transferring the substrate into a dry etching facility and performing a dry etching process.
Chamber; A support disposed within the chamber and configured to support a substrate; A gas supply device configured to supply process gas into the above chamber; A lamp disposed in the chamber and configured to receive lamp power and generate an electric charge from the process gas; and A grid disposed on the support within the chamber and provided with a control voltage, configured to remove charge within the substrate according to the control voltage; and Includes a controller, The above controller By controlling the lamp power to a first magnitude, damage to the film of the substrate is minimized, and Subsequently, a substrate processing device that controls the lamp power to a second size larger than the first size to reduce the charge within the substrate.

Description

Substrate processing apparatus and method The present invention relates to a substrate processing apparatus and method. As the integration of the semiconductor industry increases, the size of semiconductor devices decreases. The pattern size and thin film thickness of semiconductor devices decrease. Electrostatic charge generated during the process can induce charges within the substrate. These induced charges can cause pattern defects in subsequent processes. FIG. 1 is a flowchart for explaining a substrate processing method according to some embodiments of the present invention. FIG. 2 is a conceptual diagram for explaining a substrate processing apparatus according to some embodiments of the present invention. Figure 3 is a drawing for explaining the interior of the process chamber shown in Figure 2. Figure 4 is a drawing for explaining the grid shown in Figure 3. FIG. 5 is a drawing for explaining an exemplary form of power supplied by the power supply shown in FIG. 3. FIGS. 6 to 14 are flowcharts for explaining a substrate processing method according to some embodiments of the present invention. FIG. 15 is a drawing for explaining a substrate processing method according to some embodiments of the present invention. FIG. 16 is a drawing for explaining a substrate processing method according to some embodiments of the present invention. FIGS. 17 and FIGS. 18 are drawings for illustrating a substrate processing method according to some embodiments of the present invention. FIG. 19 is a drawing for explaining a substrate processing method according to some embodiments of the present invention. FIG. 20 is a flowchart for explaining a substrate processing method according to some embodiments of the present invention. Embodiments of the present invention will be described in detail below with reference to the attached drawings. Identical components in the drawings are denoted by the same reference numerals, and redundant descriptions thereof are omitted. FIG. 1 is a flowchart for explaining a substrate processing method according to some embodiments of the present invention. Referring to FIG. 1, according to a substrate processing method according to some embodiments of the present invention, a separate charge control process (S300) is performed after performing a first process (S100) and before performing a second process (S200). The charge control process (S300) is performed in a chamber different from the chamber where the first process (S100) and the second process (S200) are performed. That is, after performing the first process (S100) in a specific chamber, the charge control process (S300) is not performed in that chamber. Or, after performing the charge control process (S300) in a specific chamber, the second process (S200) is not performed in that chamber. The charge control process (S300) may be a discharge process for removing charges induced within the substrate. The recipe for the discharge process may vary depending on what the first process (S100) was. For example, the recipe may vary depending on whether the first process (S100) is a cleaning process, a photolithography process, an SEM scan, a DC test, etc. This is because the amount of charge induced or the location where charge accumulates within the substrate may vary for each of the aforementioned processes. Therefore, it is necessary to set a recipe for the discharge process suitable for the aforementioned processes. Alternatively, the recipe for the discharge process may vary depending on the type of equipment that performed the first process (S100). For example, multiple pieces of equipment may perform the cleaning process. Among the multiple pieces of equipment, the first piece of equipment may be equipment from Company A, and the second piece of equipment may be equipment from Company B. In this case, the amount/location of the charge accumulated in the substrate after passing through the first piece of equipment among the multiple pieces of equipment may differ from the amount/location of the charge accumulated in the substrate after passing through the second piece of equipment. Even among the equipment of the same company, the amount/location of the charge accumulated in the substrate may differ depending on which piece of equipment was used for cleaning. Therefore, the recipe for discharging the substrate that passed through the first piece of equipment and the recipe for discharging the substrate that passed through the second piece of equipment may be different. Alternatively, the recipe for the discharge process may vary depending on the type of film material on which charges accumulate on the substrate that has undergone the first process (S100). For example, the recipe may vary depending on whether the film material exposed on the substrate (or the film material located at the top of the substrate) is an oxide film or a nitride film. An oxide film may accumulate relatively more negative charges compared to a nitride film. For