KR-20260062830-A - semiconductor devices and methods of making bridge modules and chiplet structures having the bridge modules

KR20260062830AKR 20260062830 AKR20260062830 AKR 20260062830AKR-20260062830-A

Abstract

A semiconductor device includes a bridge die comprising a contact pad, and an electrical component is mounted on the bridge die to form a bridge module. The bridge module is placed on a carrier, and a first conductive layer is formed on the carrier. A first insulating layer is formed on the first conductive layer and the bridge module, and an opening is formed penetrating the first insulating layer to expose the first conductive layer. Subsequently, a second conductive layer is formed on the first insulating layer, and then the carrier is removed. Finally, a first semiconductor die is electrically coupled to the electrical component and the bridge die.

Inventors

이태우
이희수
명은희

Assignees

스태츠 칩팩 매니지먼트 피티이. 엘티디.

Dates

Publication Date: 20260507
Application Date: 20250922
Priority Date: 20241029

Claims (15)

A step of providing a bridge die including a contact pad; A step of forming a bridge module by mounting an electric component on the bridge die; A step of placing the above bridge module on a carrier; A step of forming a first conductive layer on the above carrier; A step of forming a first insulating layer on the first conductive layer and the bridge module; A step of forming an opening penetrating the first insulating layer to expose the first conductive layer; A step of forming a second conductive layer on the first insulating layer; Step of removing the above carrier; and A method for manufacturing a semiconductor device, comprising the step of mounting a first semiconductor die electrically coupled to the above electrical component and the above bridge die.
In paragraph 1, A method for manufacturing a semiconductor device, further comprising the step of forming a second insulating layer on the first insulating layer and the second conductive layer.
In paragraph 1, A method for manufacturing a semiconductor device, further comprising the step of mounting a second semiconductor die electrically coupled to the first semiconductor die through the bridge die.
In paragraph 1, A method for manufacturing a semiconductor device in which the above carrier is a copper-clad laminate (CCL).
In paragraph 4, A method for manufacturing a semiconductor device, comprising the step of removing the carrier, the step of separating the core of the CCL from the copper layer of the CCL; and the step of removing the copper layer from the first insulating layer, the first conductive layer, and the bridge module after separating the core from the copper layer.
In paragraph 5, Step of forming an opening in the copper layer; and A method for manufacturing a semiconductor device, further comprising the step of directly placing a bridge module on a core within the opening.
As a method for manufacturing a semiconductor device, Step of providing a bridge die; A step of forming a bridge module by mounting electrical components on the above bridge die; A step of placing the above bridge module on a carrier; A step of forming a first insulating layer on the first conductive layer and bridge module; Step of removing the above carrier; and A method for manufacturing a semiconductor device, comprising the step of mounting a first semiconductor die on the bridge die.
In Paragraph 7, The method further includes the step of forming a conductive layer on the first insulating layer, A method for manufacturing a semiconductor device, wherein the conductive layer comprises a conductive via extending through the first insulating layer.
In paragraph 8, A method for manufacturing a semiconductor device, further comprising the step of forming a second insulating layer on the first insulating layer and the conductive layer.
In Paragraph 7, A method for manufacturing a semiconductor device, wherein the carrier is a copper coated laminate (CCL).
A bridge module comprising a bridge die and a first electrical component mounted on the bridge die; A first conductive layer formed adjacent to the above bridge module; and It includes a first semiconductor die disposed on the bridge die and electrically coupled to the first conductive layer and the bridge die, and A semiconductor device in which the first semiconductor die is electrically coupled to the first electrical component through the first conductive layer.
In Paragraph 11, It further includes a second conductive layer formed on an insulating layer, A semiconductor device in which the second conductive layer comprises a conductive via in contact with the first conductive layer.
In Paragraph 11, The above bridge module is a semiconductor device comprising a second electrical component mounted on the bridge die.
In Paragraph 13, A semiconductor device in which the first electrical component includes an active component and the second electrical component includes a passive component.
In Paragraph 11, It further includes a second semiconductor die, A semiconductor device in which the second semiconductor die is connected to the first semiconductor die through the bridge die.

Description

Semiconductor devices and methods of making bridge modules and chiplet structures having the bridge modules The present invention generally relates to semiconductor devices, and more specifically, to a semiconductor device and method having a bridge module and a chiplet structure having a bridge module. Semiconductor devices are commonly found in modern electronic products. They perform various functions, such as signal processing, high-speed computing, transmission and reception of electromagnetic signals, control of electronic devices, conversion of sunlight into electricity, and generation of images for television displays. Semiconductor devices are used in the fields of communications, power conversion, networks, computers, entertainment, and consumer products. They are also used in military, aviation, automotive, industrial controllers, and office equipment. Semiconductor device manufacturers are continuously striving to create smaller semiconductor devices to meet the demands of both electronic device manufacturers and consumers, while simultaneously requiring increasingly complex devices. Bridge dies can be embedded within semiconductor substrates, providing narrower pitch interconnects and higher total bandwidth than the substrate alone can offer. However, the continuous miniaturization of end devices demands more advanced integration. Consequently, there is a demand for improved semiconductor devices, along with methods for manufacturing bridge modules and chiplet structures containing such modules. FIGS. 1a to 1j illustrate the process of forming a bridge module in the first embodiment. FIGS. 2a to 2o illustrate the process of forming a chiplet including a bridge module of the first embodiment. FIGS. 3a to 3f illustrate the process of forming a bridge module in the second embodiment. FIGS. 4a to 4e illustrate the process of forming a chiplet including a bridge module of the second embodiment. FIGS. 5a through 5d illustrate embodiments of additional bridge modules. FIGS. 6a and 6b illustrate another embodiment of forming a chiplet using a bridge module. Figures 7a and 7b illustrate an electronic device including a chiplet. The present invention is described with reference to one or more embodiments with reference to the drawings, wherein the same numbers denote the same or similar elements. Although the present invention is described in the best manner to achieve the purposes of the invention, those skilled in the art will understand that alternatives, modifications, and equivalents that may be included within the scope of the appended claims and corresponding equivalents are included within the spirit and scope of the invention. Such alternatives, modifications, and equivalents are supported by the specification and drawings below. Features shown in the drawings are not necessarily drawn to actual scale. Features assigned the same reference numbers in the drawings have similar functions. As used herein, the term "semiconductor die" includes both singular and plural forms and may refer to a single semiconductor device as well as multiple semiconductor devices. Semiconductor devices are generally manufactured through two complex manufacturing processes: front-end manufacturing and back-end manufacturing. Front-end manufacturing involves the process of forming multiple dies on the surface of a semiconductor wafer. Each die on the wafer contains active and passive electrical components, which are electrically connected to form a functional electrical circuit. Active electrical components, such as transistors and diodes, function to control the flow of current. Passive electrical components, such as capacitors, inductors, and resistors, establish the relationship between voltage and current necessary to perform the function of the electrical circuit. Backend manufacturing is the process of cutting or singulating a finished wafer into individual semiconductor dies and packaging the dies for structural support, electrical interconnection, and environmental protection. To singulate the semiconductor dies, the wafer is scribed or cut along non-functional areas of the wafer known as saw streets or scribes. The wafer is singulated using a laser cutting tool or a saw blade. After singulation, the individual semiconductor dies are placed on a package substrate containing pins or contact pads for interconnection with other system components. Subsequently, the contact pads formed on the semiconductor dies are connected to contact pads within the package. Electrical connections can be formed using conductive layers, bumps, stud bumps, conductive paste, or wire bonds. Encapsulant or other molding materials are deposited on the package to provide physical support and electrical insulation. The finished package is inserted into an electrical system, enabling the functionality of the semiconductor device to be utilized by other system components. FIGS. 1a–1g illustrate a process for forming a bridge module to be incl