KR-20260062851-A - PROTECTIVE FILM FORMING AGENT FOR SILICON-BASED SUBSTRATE, METHOD FOR PROCESSING SILICON-BASED SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

KR20260062851AKR 20260062851 AKR20260062851 AKR 20260062851AKR-20260062851-A

Abstract

The present invention provides a protective film forming agent for a silicon-based substrate comprising a silylating agent and a solvent having a Hildebrand SP value of 17.5 or less, a method for processing a silicon-based substrate using the same, and a method for manufacturing a semiconductor device using the same.

Inventors

세리자와 고헤이

Assignees

도오꾜오까고오교 가부시끼가이샤

Dates

Publication Date: 20260507
Application Date: 20251022
Priority Date: 20241029

Claims (14)

A protective film forming agent for a silicon-based substrate comprising a silylating agent and a solvent having a Hildebrand SP value of 17.5 or less.
In Article 1, A protective film forming agent for a silicon-based substrate, wherein the silylating agent is at least one selected from the group consisting of hexamethyldisilazane, trimethylsilyldimethylamine, and bisdimethylaminodimethylsilane.
In Article 1 or Article 2, A protective film forming agent for a silicon-based substrate, wherein the above solvent is at least one selected from the group consisting of a hydrocarbon-based solvent, an ester-based solvent having one ester bond in its molecule, and an ether-based solvent having one ether bond in its molecule.
In Article 1 or Article 2, A protective film forming agent for a silicon-based substrate, wherein the content of the above-mentioned silylating agent is 1 mass% or more and 20 mass% or less.
In Article 1 or Article 2, A protective film forming agent for a silicon-based substrate, wherein the sum of the contents of a hydrocarbon-based solvent, an ester-based solvent having one ester bond in its molecule, and an ether-based solvent having one ether bond in its molecule, in the total amount of the above solvent, is 80 mass% or more and 100 mass% or less.
In Article 1 or Article 2, A protective film forming agent for a silicon-based substrate, wherein the sum of the content of the silylating agent and the content of the solvent is 80 mass% or more and 100 mass% or less.
In Article 1 or Article 2, A protective film forming agent for a silicon-based substrate, capable of forming a protective film on a silicon-based substrate including an organic film having at least a portion exposed.
(1) A process of performing an oxidation treatment on the surface of a silicon-based substrate including an organic film that is exposed in at least a portion, and (2) A process of forming a protective film by contacting a protective film forming agent for silicon substrates to at least a portion of the surface of the silicon substrate on which the oxidation treatment has been performed, and A method for treating a silicon-based substrate, wherein the protective film forming agent for the silicon-based substrate comprises a silylating agent and a solvent having a Hildebrand SP value of 17.5 or less.
In Article 8, The above (2) process is a method for treating a silicon-based substrate, wherein the above process is a process of forming a protective film by immersing a protective film forming agent for the silicon-based substrate on at least a portion of the surface of the silicon-based substrate on which the oxidation treatment has been performed.
In Article 8 or Article 9, A method for processing a silicon-based substrate, wherein the silicon-based substrate is one or more selected from the group consisting of silicon oxide, carbon-containing silicon oxide, silicon nitride, silicon carbide, silicon carbonitride, silicon oxynitride, silicon oxycarbonitride, and silicon.
(1) A process of performing an oxidation treatment on the surface of a silicon-based substrate including an organic film that is exposed in at least a portion, and (2) A process of forming a protective film by contacting a protective film forming agent for silicon substrates to at least a portion of the surface of the silicon substrate on which the oxidation treatment has been performed, and A method for manufacturing a semiconductor device, wherein the above-mentioned protective film forming agent for a silicon-based substrate comprises a silylating agent and a solvent having a Hildebrand SP value of 17.5 or less.
In Article 11, The above (2) process is a method for manufacturing a semiconductor device, wherein the above process is a process of forming a protective film by immersing a protective film forming agent for the silicon substrate on at least a portion of the surface of the silicon substrate on which the oxidation treatment has been performed.
In Article 11 or Article 12, After the above (2) process, A method for manufacturing a semiconductor device, further comprising a process of etching the silicon-based substrate having the protective film formed thereon.
In Article 11 or Article 12, A method for manufacturing a semiconductor device, wherein the silicon-based substrate is one or more selected from the group consisting of silicon oxide, carbon-containing silicon oxide, silicon nitride, silicon carbide, silicon carbonitride, silicon oxynitride, silicon oxycarbonitride, and silicon.

Description

Protective film forming agent for silicon-based substrate, method for processing silicon-based substrate, and method for manufacturing a semiconductor device The present invention relates to a protective film forming agent for a silicon-based substrate, a method for processing a silicon-based substrate, and a method for manufacturing a semiconductor device. Cross-reference regarding related applications The present application claims priority based on Patent Application No. 2024-189868 filed with the Japan Patent Office on October 29, 2024, the entire contents of which are incorporated herein by reference. In the manufacturing process of a semiconductor device, for example, a process of etching a laminated substrate having a silicon oxide film ( SiO2 ) or a silicon nitride film (SiN) formed on a substrate such as a silicon-based substrate is performed. At that time, the formation of an etching protective film using a silylating agent is used to control the amount of etching or for selective etching. In addition, if an etching protective film can be formed on an exposed portion of a silicon-based substrate in the presence of a resist, the degree of freedom in pattern formation of the semiconductor device can be improved. Regarding such technology, Patent Document 1 discloses a substrate treatment method comprising: a moisture removal process for removing moisture adsorbed on a silicon oxide film from a substrate having a surface exposed to a silicon nitride film and a silicon oxide film; a silylation process for supplying a silylating agent to the substrate after the moisture removal process; and an etching process for supplying an etching agent to the substrate after the silylation process. Hereinafter, forms for carrying out the present invention (hereinafter simply referred to as “the present embodiment”) will be described in detail. The present embodiment below is an example for explaining the present invention and is not intended to limit the present invention to the contents below. The present invention may be carried out by appropriate modifications within the scope of its gist. Furthermore, each component and parameter disclosed in this specification may be any combination unless otherwise specified. Also, the upper and lower limits of values disclosed in this specification may be any combination unless otherwise specified. Furthermore, in this specification, “comprise” may be changed to “consist essentially of” and “consist of” as needed. <Protective film forming agent for silicon-based substrates> The protective film forming agent for a silicon-based substrate related to the present embodiment is a protective film forming agent for a silicon-based substrate comprising a silylating agent and a solvent having a Hildebrand SP value (hereinafter simply abbreviated as "SP value") of 17.5 or less. By using a solvent having a Hildebrand SP value of 17.5 or less as a solvent used in combination with the silylating agent, a protective film can be formed on a silicon-based substrate without damaging the resist. That is, the protective film forming agent for a silicon-based substrate related to the present embodiment can form a protective film without dissolving the resist. As such, the protective film forming agent for a silicon-based substrate related to the present embodiment has excellent resist dissolution inhibition (resist dissolution inhibition) and etching protection ability. Since the protective film forming agent for a silicon-based substrate related to the present embodiment can further improve such resist dissolution inhibition and etching protection ability by using a wet method, it is preferable to use it in a wet method. Although it is not certain, it is presumed that the reason the protective film-forming agent for silicon-based substrates related to the present embodiment can form a protective film without dissolving the resist is due to the following reasons. First, since a solvent with an SP value of 17.5 or less is used, unintended dissolution of the resist during processing can be suppressed. Also, because the SP value is 17.5 or less, the interaction between the solvent and the silylating agent is suppressed, and the reaction between the silylating agent and the silicon-based substrate can be promoted. It is presumed that the effects described above are obtained in this regard (however, the operations and effects of the present embodiment are not limited to these). (Silicon-based substrate) Regarding the silicon-based substrate on which the protective film-forming agent for silicon-based substrates related to the present embodiment is used, it is not particularly limited, but, for example, it is preferably one or more selected from the group consisting of silicon oxide, carbon-containing silicon oxide, silicon nitride, silicon carbide, silicon carbonitride, silicon oxynitride, silicon oxycarbonitride, and silicon. If the silicon-based substrate is made of such a material, a protective f