KR-20260062855-A - NOVEL PRECURSOR FOR FORMING A METAL-CONTAINING THIN FILM, METHOD FOR FORMING METAL-CONTAINING THIN FILM USING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE THIN FILM

Abstract

The present invention relates to a novel precursor for forming a metal-containing thin film, a method for forming a thin film using the same, and a device including said thin film. More specifically, the invention relates to a novel precursor for forming a metal-containing thin film having high deposition temperature and low viscosity characteristics, a method for forming a thin film using the same, and a device including said thin film.

Inventors

• 신동희
• 김성룡
• 이종민
• 황인천
• 홍창성
• 이상경

Assignees

• 에스케이트리켐 주식회사

Dates

Publication Date

20260507

Application Date

20251023

Priority Date

20241029

Claims (11)

1. A precursor for forming a metal-containing thin film comprising a compound represented by the following chemical formula 1. [Chemical Formula 1] In the above chemical formula 1, M is bismuth (Bi), and N stands for nitrogen, R1 to R4 are identical or different from each other and are each independently selected from hydrogen, a C1-C5 straight-chain alkyl group, a C3-C5 branched alkyl group, a C3-C8 cyclic alkyl group, and a C2-C6 alkenyl group, and n is an integer from 1 to 5.
2. In paragraph 1, A precursor for forming a metal-containing thin film, characterized in that the above R1 to R4 are identical or different from each other and each is independently a C1-C5 straight-chain alkyl group.
3. In paragraph 1, A precursor for forming a metal-containing thin film, characterized in that n is 3.
4. In paragraph 1, A precursor for forming a metal-containing thin film, characterized by a viscosity (@ 25℃) of 10 cP or less.
5. First step of preparing a substrate in a reactor; A second step of forming a metal-containing thin film by depositing a precursor for forming a metal-containing thin film according to any one of claims 1 to 4 on the surface of the substrate; and A third step of reacting the above metal-containing thin film with a reactive gas; comprising Method for forming a metal-containing thin film.
6. In paragraph 5, A method for forming a metal-containing thin film, characterized in that the second step above involves vaporizing the precursor for forming the metal-containing thin film, transferring it into a reactor, and depositing it.
7. In paragraph 5, A method for forming a metal-containing thin film, characterized in that the deposition in the second step is performed by a process selected from a spin-on dielectric (SOD) process, a low temperature plasma (LTP) process, chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), high density plasma-chemical vapor deposition (HDPCVD), atomic layer deposition (ALD) process, and plasma-enhanced atomic layer deposition (PEALD) process.
8. In paragraph 5, A method for forming a metal-containing structure, characterized in that the deposition in the second step is performed by an atomic layer deposition (ALD) process at a temperature range of 240°C or higher.
9. In paragraph 8, A method for forming a metal-containing structure, characterized in that the deposition in the second step is performed by an atomic layer deposition (ALD) process in a temperature range of 240 to 280°C.
10. In paragraph 5, A method for forming a metal-containing thin film, characterized in that the reactive gas of the third step comprises one or more selected from nitrogen ( N₂ ), ammonia ( NH₃ ), hydrazine ( N₂H₄ ), nitrous oxide ( N₂O ), oxygen ( O₂ ), water vapor ( H₂O ), ozone ( O₃ ), hydrogen peroxide ( H₂O₂ ), silane ( SiH₄ ), hydrogen (H₂ ), and diborane (B₂H₆ ) .
11. A semiconductor device comprising a metal-containing thin film formed by depositing a precursor for forming a metal-containing thin film according to any one of claims 1 to 4 on the surface of the substrate.

Description

Novel precursor for forming a metal-containing thin film, method for forming a metal-containing thin film using the same, and semiconductor device including the thin film The present invention relates to a novel precursor for forming a metal-containing thin film, a method for forming a metal-containing thin film using the same, and a semiconductor device including said thin film. More specifically, the invention relates to a novel precursor for forming a metal-containing thin film having high deposition temperature and low viscosity characteristics, a method for forming a metal-containing thin film using the same, and a semiconductor device including said thin film. As integration density improves through the miniaturization of semiconductor lines, the space allowed for capacitor structure implementation is becoming limited by linewidth; consequently, conventional silicon-based dielectrics are facing limitations in the manufacturing methods for semiconductor devices used to implement capacitor structures. Furthermore, as silicon-based dielectrics are being replaced and semiconductor device performance improves, thin films utilizing high-dielectric materials are being applied. However, using materials with excessively high dielectric constants presents a problem in that the energy bandgap decreases, while leakage current actually increases. One of the solutions to address these problems is the need for a technology to form high-quality thin films, and to this end, it is necessary to optimize the precursors used in thin film formation. Accordingly, as a method to optimize precursors for forming metal-containing thin films, various precursors capable of improving dielectric constant and leakage current characteristics have been proposed; however, these precursors are generally solid or low-volatility liquid phases, and various problems exist, such as limitations in securing the low viscosity characteristics required for forming high-quality thin films. Therefore, to optimize precursors for thin film formation, it is necessary to develop precursors that satisfy various requirements for high-quality film formation, such as high volatility, thermal stability, and low viscosity characteristics. Figure 1 is a graph of the 1H-NMR analysis results of 3 -dimethylaminopropyldimethylbismuth, a compound prepared in Synthesis Example 1 of the present invention. Figure 2 is a graph of the GC-MS analysis results of 3-dimethylaminopropyldimethylbismuth, a compound prepared in Synthesis Example 1 of the present invention. Figure 3 is a graph of the TGA analysis results of 3-dimethylaminopropyldimethylbismuth, a compound prepared in Synthesis Example 1 of the present invention. Figure 4 shows the viscosity analysis results of 3-dimethylaminopropyldimethylbismuth, a compound prepared in Synthesis Example 1 of the present invention. Figure 5 shows the results of the Bi₂O₃ thin film process of dimethylaminodimethylbismuth , a compound prepared in Synthesis Example 1 of the present invention. The aforementioned objectives, features, and advantages are described in detail below with reference to this specification, and accordingly, a person skilled in the art to which the present invention pertains will be able to easily implement the technical concept of the present invention. In describing the present invention, detailed descriptions of known technologies related to the present invention are omitted if it is determined that such descriptions may unnecessarily obscure the essence of the present invention. Where terms such as "comprising," "having," "containing," "arranging," or "having" are used for a component in this specification, other parts may be added unless "only" is used. Where a component is expressed in the singular, it includes cases where it is included in the plural unless specifically stated otherwise. Throughout this specification, unless specifically stated otherwise, each component may be singular or plural. Throughout this specification, "A and/or B" means A, B, or A and B unless specifically stated otherwise, and "C to D" means C or more and D or less unless specifically stated otherwise. Unless otherwise specifically stated in this specification, the standard of any unit is interpreted to mean "weight." In interpreting the components in this specification, they are interpreted to include an error range even if there is no separate explicit description. The present invention will be described in more detail below. The precursor for forming a metal-containing thin film according to the present invention is capable of forming a metal-containing thin film containing bismuth (Bi) on the surface of a substrate of a high dielectric material, and is characterized by comprising a compound represented by the following chemical formula 1. [Chemical Formula 1] In the above chemical formula 1, M is bismuth (Bi), N means nitrogen, R1 to R4 are identical or different from each other and are each independently selected from h