KR-20260062859-A - DEVICE AND SYSTEM FOR IN-SITU SCANNING SUBSTRATE TEMPERATURE IN AN EPITAXIAL REACTOR

KR20260062859AKR 20260062859 AKR20260062859 AKR 20260062859AKR-20260062859-A

Abstract

A temperature monitoring system for measuring the temperature of a substrate within a reactor comprises: (i) a reaction chamber suitable for depositing a film on the deposition surface of a substrate; and (ii) a temperature monitoring device comprising an optical device, a remote sensing thermometer, and a support device. The remote sensing thermometer comprises at least one IR irradiation detector suitable for measuring temperature. The reaction chamber is provided with at least one opening, and the at least one optical device is configured to (i) block IR irradiation emitted from at least one point on the deposition surface of the substrate through the opening; and (ii) divert the blocked IR irradiation to the detector.

Inventors

마우릴로 메스치야

Assignees

엘피이 에스피에이

Dates

Publication Date: 20260507
Application Date: 20251024
Priority Date: 20241029

Claims (20)

As a temperature monitoring system for measuring the temperature of a substrate during the deposition process of a reactor, - At least one reaction chamber of a reactor suitable for depositing a film on the deposition surface of a substrate; - Includes at least one temperature monitoring device comprising at least one optical device, at least one remote sensing thermometer, and a support device, The support device is configured to support at least one optical device and includes an inlet element that is integral with the optical device; The above remote sensing thermometer includes at least one IR radiation detector suitable for temperature measurement, and the reaction chamber has at least one aperture; and the at least one optical device - Capture IR radiation emitted from at least one point on the deposition surface of the substrate through the at least one aperture; - By diverting the captured IR radiation toward the at least one detector; A temperature monitoring system configured to measure the temperature of at least one point on the deposition surface using the above-mentioned remote sensing thermometer.
A temperature monitoring system according to claim 1, wherein the remote sensing thermometer is preferably a high-temperature thermometer suitable for measuring local temperature.
A temperature monitoring system according to claim 1 or 2, wherein the remote sensing thermometer includes a light source; and the light source emits a light beam to highlight at least one point on the deposition surface of a substrate emitting IR radiation to be measured.
A temperature monitoring system according to any one of claims 1 to 3, wherein the support device includes a cooling system.
A temperature monitoring system according to any one of claims 1 to 4, wherein the support device is configured to displace the optical device along a predefined direction, preferably the predefined direction is substantially perpendicular to the deposition surface of the substrate.
A temperature monitoring system according to any one of claims 1 to 5, wherein the support device has an opening and the optical device is wholly or partially enclosed within the support device.
A temperature monitoring system according to any one of claims 1 to 6, wherein the insertion element is made of graphite.
In any one of claims 1 to 7, the support device is configured to displace the optical device from position A to position A' which is different from A. - At position A, the optical device is configured to redirect captured IR radiation emitted from a first reference point on the deposition surface of the substrate through the at least one aperture toward the at least one detector; - At position A', the optical device is configured to redirect captured IR radiation emitted from a second reference point on the deposition surface of the substrate toward the at least one detector through the at least one aperture, wherein the second reference point is different from the first reference point, a temperature monitoring system.
In any one of claims 1 to 8, the support device is configured to displace the optical device from position A to position B, which is different from A, and - At position A, the optical device is configured to redirect IR radiation emitted from a first reference point on the deposition surface of the substrate toward the at least one detector through the at least one aperture; - At position B, the optical device is out of sight of any point on the deposition surface of the substrate, a temperature monitoring system.
A temperature monitoring system according to any one of claims 1 to 9, wherein the support device is configured to continuously scan the temperature of the deposition surface along a plurality of points by displacing an optical device in a direction perpendicular to the deposition surface of the substrate, preferably the plurality of points include a center point and at least one peripheral point of the deposition surface of the substrate, and preferably the at least one peripheral point is an upstream peripheral point.
A temperature monitoring system according to any one of claims 1 to 10, wherein at least one optical device is a prism or mirror suitable for operating at a temperature of 1400 to 1750°C.
A temperature monitoring system according to any one of claims 1 to 11, wherein the remote sensing thermometer is configured to be displaced along a predefined trajectory to scan the temperature of the deposition surface along a plurality of points including at least a center point and at least one peripheral point of the deposition surface.
A temperature monitoring system according to any one of claims 1 to 12, wherein at least one aperture is an aperture configured to discharge exhaust gas out of the reaction chamber.
A temperature monitoring system according to any one of claims 1 to 13, wherein the temperature monitoring device is connected to a gas source configured to allow gas to flow between the optical device and the substrate.
In paragraph 14, the gas supply source is an inert gas, preferably argon or hydrogen, in a temperature monitoring system.
In any one of claims 1 to 14, the temperature monitoring device is configured to convert the temperature measured by the remote sensing thermometer into a first electrical signal; and the temperature monitoring device - A data acquisition system configured to collect the first electrical signal and convert it into a first digital numerical set; and - A temperature monitoring system further comprising an accessible memory and a processor configured to process the first set of digital numbers.
In claim 16, the temperature monitoring device further comprises a position sensor configured to measure the position of the optical device and convert it into a second electrical signal, the data collection system configured to collect the second electrical signal and convert it into a second digital numerical set; and the processor configured to process the second digital numerical set and associate it with the first digital value set, the temperature monitoring system.
A temperature monitoring system according to any one of claims 1 to 17, wherein the reaction chamber is a high-temperature wall, cross-flow chamber suitable for epitaxially depositing a silicon carbide film on a substrate.
As a reactor for depositing a film on the deposition surface of a substrate, - A temperature monitoring system according to any one of paragraphs 1 through 18; - An insulation system surrounding the above reaction chamber; - Includes a heating system surrounding the insulation system, but, A reactor configured such that the temperature monitoring device measures the temperature of one or more points on the deposition surface of the substrate in real time during reactor operation.
As a temperature monitoring device, - At least one optical device; - At least one remote sensing thermometer including an IR detector; and - A support device comprising a retractable element configured to support the optical device and integrated with the optical device, wherein A temperature monitoring device configured such that the optical device above reflects, refracts, or redirects the optical path of IR light from a first direction to a second direction different from the first direction.

Description

Device and system for in-situ scanning substrate temperature in an epitaxial reactor The present invention relates to the field of a temperature monitoring system for measuring the temperature of a substrate during a deposition process in a reactor. In addition, although not necessarily, the present invention relates to the field of epitaxially depositing a semiconductor film on a substrate, and in particular to a reactor that implements a temperature monitoring system. In addition, the present invention relates to the field of depositing silicon carbide and gallium nitride films on a semiconductor substrate in a high-temperature wall, cross-flow, homogeneous epitaxial or heterogeneous epitaxial reactor. A semiconductor layer formed by epitaxial growth is also called an epilayer and is formed through epitaxial deposition within the reaction chamber of a reactor. The deposited material may be identical to the substrate or may include a different semiconductor with specific desirable qualities. Epitaxial technology is suitable for the manufacture of complex microprocessors and memory devices because it can control the crystal structure formed on the substrate and improve the surface characteristics of the epilayer. Typically, the reaction chamber is heated to a desired temperature before film deposition and maintained at a substantially constant temperature throughout the deposition process. To achieve this effect, an insulation system is used to reduce the energy required to achieve and maintain the nominal temperature of the deposition process. The ability to maintain a time-controlled temperature during and between deposition processes affects the quality of film growth. However, other temperature-related parameters also affect the deposition process. In fact, it has been observed that local temperature variations occurring on the deposition surface of the substrate significantly affect the quality of the deposited film. The reaction chamber type (single wafer versus batch), reaction chamber design (i.e., horizontal or vertical flow), and substrate size can affect the overall spatial temperature profile of the substrate being processed. Generally, the deposition surface of the substrate is affected by the temperature gradient, which can lead to undesirable effects, including doping non-uniformity, growth deviations, and other defects. Some reaction chamber designs known in the art (e.g., the single-wafer, horizontal, cross-flow chamber disclosed in EP4065747) improve the temperature gradient of the substrate, but they lack the capability to measure such gradient or directly monitor the deposition surface temperature of the substrate in real time to optimize process conditions/design or track changes between runs. Generally, it is difficult to accurately measure the substrate temperature in real time at one or multiple points on the deposition surface due to constraints associated with the reaction chamber design, high operating temperatures, and the presence of corrosive process gases. For example, in the case of an epitaxial reactor for silicon carbide deposition, the temperature inside the chamber cavity is 1400 to 1750°C, and additional complexity arises because as parasitic SiC accumulates on chamber components exposed to process gases and grows, the deposit can block small holes fabricated in the cylinder walls to allow a remote sensing thermometer to aim directly at the substrate. On the other hand, if the holes are larger, the temperature profile inside the reaction chamber may be affected. Therefore, especially for high-temperature wall reactors for silicon carbide deposition, it is desirable to provide a device and system configured to measure the deposition surface temperature of the substrate in situ during deposition. The content of the present invention is provided to introduce selected concepts in a simplified form. These concepts are described in more detail in the detailed description of exemplary embodiments of the present disclosure below. The content of the present invention is not intended to distinguish the principal or essential features of the claimed subject matter, nor is it intended to limit the scope of the claimed subject matter. The objective of the present invention is to overcome the disadvantages of the prior art. In particular, one objective of the present invention is to provide a temperature monitoring device configured to measure the temperature of one or more points on the deposition surface of a substrate in a reactor during a deposition process, and a temperature monitoring system including said device. Another objective of the present invention is to provide a reactor for silicon carbide deposition equipped with the temperature monitoring device and/or temperature monitoring system. The aforementioned primary objective is achieved through the invention specified in the appended claims, which constitute an essential component of this specification. Note that the use o