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KR-20260063055-A - ETCHING AGENT COMPOSITION AND ETCHING METHOD USING THE SAME

KR20260063055AKR 20260063055 AKR20260063055 AKR 20260063055AKR-20260063055-A

Abstract

An etching solution composition according to one embodiment may include an oxidizing agent; an etching agent comprising a fluorine (F)-containing compound; and an inhibitor comprising a heterocyclic compound having one or more aromatic ring substituents having 6 to 20 carbon atoms and containing one or more of nitrogen (N), sulfur (S), and oxygen (O). An etching method for an etching target film according to one embodiment may include the steps of: preparing an etching target film comprising molybdenum (Mo) and titanium silicon nitride; and etching the etching target film using the etching solution composition.

Inventors

  • 김요한
  • 홍형표
  • 이준우

Assignees

  • 주식회사 케이씨텍

Dates

Publication Date
20260507
Application Date
20241030

Claims (15)

  1. Oxidizing agent; An etching agent comprising a fluorine (F) containing compound; and An inhibitor comprising a heterocyclic compound containing one or more of nitrogen (N), sulfur (S), and oxygen (O), having one or more aromatic ring substituents having 6 to 20 carbon atoms. including, Etching solution composition.
  2. In paragraph 1, The above oxidizing agent is, Comprising one or more of hydrogen peroxide ( H₂O₂ ), periodic acid, and peracetic acid, Etching solution composition.
  3. In paragraph 1, The above fluorine (F) containing compound is, Comprising one or more of hydrogen fluoride, ammonium fluoride, ammonium bifluoride, ammonium bifluoride, tetramethylammonium fluoride, tetraethylammonium fluoride, tetrapropylammonium fluoride, tetrabutylammonium fluoride, tetrabutyl fluoride, fluoroboric acid ( BF₄H ), and fluorosilicic acid ( H₂SiF₆ ), Etching solution composition.
  4. In paragraph 1, The above aromatic ring substituent having 6 to 20 carbon atoms is, One or more of benzene, naphthalene, and anthracene, Etching solution composition.
  5. In paragraph 1, The above inhibitor is, Quinine, Pyrilamine maleate salt, Sulfapyridine, Sulfathiazole, Omeprazole, 2-phenyl-2-imidazole, 2-phenyl-2-oxazoline, 3-phenyl-1H-pyrazole, benzylaminopurine, 4-3-phenylpropyl)piperidine, 9,10-bis(4-pyridyl)anthracene, Comprising one or more of 4-[(E)-2-(9-Anthryl)vinyl]pyridine, 4-(naphthalene-2-yl)-1H-imidazopyridine, 2-phenylfuran, 5-phenyl-oxazole, 2-phenylthiophene, 2-phenylthiazole, and 1-[(thiazole-2-yl)azo]-2-naphthol, Etching solution composition.
  6. In paragraph 1, It further contains a pH adjuster, The above pH adjuster comprises one or more of hydrochloric acid, sulfuric acid, nitric acid, methanesulfonic acid, p-toluenesulfonic acid, oxalic acid, sulfamic acid, monoethanolamine, diethanolamine, triethanolamine, and propanolamine. Etching solution composition.
  7. In paragraph 1, It further comprises a second inhibitor including an azole compound, and The content of the second inhibitor is greater than 0 and less than or equal to 5 weight percent relative to the total weight of the etching solution composition. Etching solution composition.
  8. In Paragraph 7, The second inhibitor is, Comprising one or more of tolyltriazole, oxadiazole, triazole, tetrazole, isoazole, oxazole, isothiazole, isooxazole, imidazole, pyrrole, pyrazole, thienazole, furazole, and thioxazole, Etching solution composition.
  9. In paragraph 1, The organic solvent further comprises a polar aprotic solvent or a polar protic solvent, and The content of the above organic solvent is greater than 0 and less than or equal to 50 weight percent relative to the total weight of the etching solution composition, Etching solution composition.
  10. In Paragraph 9, The above organic solvent is, Dimethyl sulfoxide (DMSO), triethylene glycol dimethyl ether (DMTG), acetamide, N-methylpyrrolidone (NMP), piperazine, morpholine, ethylene glycol monomethyl ether, diethylene glycol monomethyl ether, polyethylene glycol monomethyl ether, ethylene glycol monoethyl ether, diethylene glycol monoethyl ether, triethylene glycol monoethyl ether, polyethylene glycol monoethyl ether, ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, triethylene glycol dimethyl ether Comprising one or more of glycol dimethyl ether), diethylene glycol diethyl ether, diethylene glycol methyl ethyl ether, diethylene glycol methyl butyl ether, triethylene glycol methyl butyl ether, propylene glycol dimethyl ether, dipropylene glycol dimethyl ether, and butyl carbitol, Etching solution composition.
  11. In paragraph 1, The content of the oxidizing agent is 0.001 to 10 weight% relative to the total weight of the etching solution composition, Etching solution composition.
  12. In paragraph 1, The content of the etching agent is 0.001 to 5 weight% based on the total weight of the etching solution composition, and The content of the above inhibitor is 0.0001 to 5 weight% relative to the total weight of the etching solution composition, Etching solution composition.
  13. In paragraph 6, The content of the above pH adjuster is 0.01 to 10 weight% based on the total weight of the etching solution composition, and The pH of the above etching solution composition is 0 to 4, Etching solution composition.
  14. In paragraph 1, The film to be etched of the above etching solution composition is, A film comprising molybdenum (Mo) and titanium silicon nitride, Etching solution composition.
  15. A step of preparing an etching target film comprising molybdenum (Mo) and titanium silicon nitride; and Step of etching the above-mentioned etching target film using the etching solution composition described in claim 1 A method for etching a film to be etched, comprising

Description

Etching Agent Composition and Etching Method Using the Same The following various embodiments relate to an etching solution composition and an etching method using the same. With the rapid advancement of technology in the semiconductor field in recent years, it has become possible to realize miniaturization of devices through the high integration of internal circuits of semiconductor devices, and accordingly, electronic devices containing semiconductor devices can also achieve miniaturization or high portability. In semiconductor manufacturing processes, in order to manufacture microsemiconductor devices with various functions, it is essential to introduce two or more films with different characteristics onto a substrate to form a circuit that is high-density integrated with a complex structure. For example, various films such as silicon oxide, silicon nitride, titanium nitride, and polysilicon films can be introduced into semiconductor processes, and depending on the semiconductor process and device, they perform various roles such as insulating films, barrier films, and stationary films. The semiconductor etching process is a process in which, among the various films listed above, unnecessary films are removed while retaining the films required for the characteristics of the semiconductor device to be produced. Such semiconductor etching processes require an etching method that rapidly and accurately removes the film to be eliminated while simultaneously minimizing the impact on other films. Therefore, there is an ongoing need for research on etching compositions and methods that can protect other film materials while maintaining a certain selectivity for specific target films. Hereinafter, embodiments will be described in detail with reference to the attached drawings. In the description with reference to the attached drawings, identical components are given the same reference numeral regardless of the drawing number, and redundant descriptions thereof will be omitted. The terms used in the embodiments are for illustrative purposes only and should not be interpreted as intended to be limiting. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this specification, terms such as "comprising" or "having" are intended to indicate the existence of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and should be understood as not precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof. Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as generally understood by those skilled in the art to which the embodiments pertain. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and should not be interpreted in an ideal or overly formal sense unless explicitly defined in this application. In addition, when describing with reference to the attached drawings, identical components are assigned the same reference numeral regardless of drawing symbols, and redundant descriptions thereof are omitted. In describing the embodiments, if it is determined that a detailed description of related prior art could unnecessarily obscure the essence of the embodiments, such detailed description is omitted. Additionally, terms such as first, second, A, B, (a), (b), etc., may be used when describing the components of the embodiments. These terms are intended merely to distinguish the components from other components, and the nature, order, or sequence of the components is not limited by these terms. Where it is stated that a component is "connected," "combined," or "joined" to another component, it should be understood that the component may be directly connected or joined to the other component, but that another component may also be "connected," "combined," or "joined" between each component. Components included in any one embodiment and components having common functions shall be described using the same names in other embodiments. Unless otherwise stated, the descriptions given in any one embodiment may also apply to other embodiments, and specific descriptions shall be omitted to the extent of overlap. It is understood that the term “about” refers to a range of numbers that a person skilled in the art would consider equivalent to the stated value in terms of achieving the same function or result. When the term “about” is used with a number or value, the term “about” refers to ±20% of the number or value, primarily ±10% of the number or value, often ±5% of the number or value, or ±2% of the number or value. In some modalities, the term “about” may refer to the number or value itself. In this document, each of the phrases such as "A or B", "at least one of A and B", "a