KR-20260063084-A - Backplane crystallization analysis system and the method thereof

KR20260063084AKR 20260063084 AKR20260063084 AKR 20260063084AKR-20260063084-A

Abstract

A backplane crystallization analysis system according to one embodiment of the present invention is characterized by comprising: an image acquisition unit that acquires a sampling image of a backplane substrate after an annealing process of a backplane substrate applied to a display; a coordinate extraction unit that extracts coordinate values of a protrusion where grain is formed from the acquired sampling image; a coordinate selection unit that receives the extracted coordinate values and selects the coordinates of three points based on the extracted coordinate values by adjusting each parameter to be similar to a preset grain crystallization data coordinate value; a boundary generation unit that generates a grain boundary centered on the coordinates of three points close to the selected coordinate values; and a judgment unit that determines whether the generated grain boundary has been generated within a normal range by comparing it with a preset grain boundary value.

Inventors

장진녕
한원희
백기현

Assignees

주식회사 에이피에스

Dates

Publication Date: 20260507
Application Date: 20241030

Claims (20)

An image acquisition unit that acquires a sampling image of a backplane substrate after an annealing process of a backplane substrate applied to a display; A coordinate extraction unit that extracts coordinate values of a grain-formed protrusion from the above-mentioned acquired sampling image; A coordinate selection unit that receives the extracted coordinate values and adjusts each parameter to be similar to the pre-set grain crystallization data coordinate values, and selects the coordinates of three points based on the extracted coordinate values; A boundary generation unit that generates a grain boundary centered on the coordinates of three points close to the selected coordinate values; and A backplane crystallization analysis system comprising: a judgment unit that determines whether the generated grain boundary is generated within a normal range by comparing it with a preset grain boundary value.
In paragraph 1, A backplane crystallization analysis system characterized by the above-mentioned image acquisition unit acquiring a sampling image of a backplane substrate by applying one of Scanning Electron Microscopy (SEM) measurement, Transmission Electron Microscopy (TEM) measurement, or Atomic Force Microscopy (AFM) measurement.
In paragraph 1, The above coordinate selection unit is, A backplane crystallization analysis system characterized by receiving the extracted coordinate values above and calculating the distance between each coordinate.
In paragraph 3, A backplane crystallization analysis system characterized in that, in the coordinate selection unit, each parameter includes the calculated distance between each coordinate and the angle between each coordinate.
In paragraph 4, A backplane crystallization analysis system characterized by selecting the coordinates of three points closest to each coordinate based on the distance between each coordinate calculated above.
In paragraph 1, A backplane crystallization analysis system characterized by generating a rectangular grain boundary in the boundary generation unit, wherein one of the three nearest points is connected by a line based on the selected coordinates, the connected point coordinate is connected by a line to another point coordinate, and the connected point coordinate is connected by a line to the remaining point coordinate.
In paragraph 1, A backplane crystallization analysis system characterized by the above-mentioned judgment unit determining whether the generated grain boundary is generated in a square shape within a normal range by comparing it with a preset grain boundary value.
In paragraph 1 or 7, A backplane crystallization analysis system characterized by the fact that if the above-determined judgment unit determines that a square shape within a normal range was not generated, the above-determined coordinate selection unit readjusts the parameter values and selects the coordinates of three points based on the extracted coordinate values.
In paragraph 1 or 7, A backplane crystallization analysis system characterized by further including an analysis unit that, when the judgment unit determines that the generated grain boundary is within a normal range, analyzes and outputs the area, average diameter, major axis length, and minor axis length of the grain as a scatter graph based on the generated grain boundary data.
In Paragraph 9, A backplane crystallization analysis system characterized by the above analysis unit extracting and outputting the mean value (mu) and standard deviation (sigma) of the analyzed dispersion graph, respectively.
A step of acquiring a sampling image of a backplane substrate after an annealing process of a backplane substrate applied to a display in an image acquisition unit; A step of extracting coordinate values of a grain-formed protrusion from the acquired sampling image in a coordinate extraction unit; A step of receiving the extracted coordinate values in the coordinate selection unit, adjusting each parameter to be similar to the pre-set grain crystallization data coordinate values, and selecting the coordinates of three points based on the extracted coordinate values; A step of generating a grain boundary centered on the coordinates of three points close to the selected coordinate values in a boundary generation unit; and A backplane crystallization analysis method comprising: a step of determining whether the generated grain boundary is generated within a normal range by comparing it with a preset grain boundary value in a judgment unit.
In Paragraph 11, A method for analyzing backplane crystallization, characterized by acquiring a sampling image of a backplane substrate by applying one of Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), or Atomic Force Microscopy (AFM) in the step of acquiring the above sampling image.
In Paragraph 11, In the step of selecting the above coordinates, A backplane crystallization analysis method characterized by receiving the extracted coordinate values above and calculating the distance between each coordinate.
In Paragraph 13, A backplane crystallization analysis method characterized in that, in the step of selecting the above coordinates, each parameter includes the distance between each calculated coordinate and the angle between each coordinate.
In Paragraph 14, A backplane crystallization analysis method characterized by selecting the coordinates of three points closest to each coordinate based on the distance between each coordinate calculated above.
In Paragraph 11, A backplane crystallization analysis method characterized by, in the step of generating the grain boundary, connecting one of the three nearest points based on the selected coordinates with a line, connecting the connected point coordinate with another point coordinate with a line, and connecting the other connected point coordinate with a line to the remaining point coordinate to generate a rectangular grain boundary.
In Paragraph 11, A backplane crystallization analysis method characterized by, in the above-determining step, determining whether the generated grain boundary is generated in a square shape within a normal range by comparing it with a preset grain boundary value.
In Article 11 or Article 17, A backplane crystallization analysis method characterized by, if it is determined in the above-determining step that a square shape within a normal range was not generated, the coordinate selection unit readjusts the parameter value and selects the coordinates of three points based on the extracted coordinate value.
In Article 11 or Article 17, A backplane crystallization analysis method characterized by further including a step of analyzing and outputting the area, average diameter, major axis length, and minor axis length of the grains as a scatter plot based on the generated grain boundary data when it is determined in the above-determining step that the generated grain boundary is generated within a normal range.
In Paragraph 19, A backplane crystallization analysis method characterized by extracting and outputting the mean value (mu) and standard deviation (sigma) of the analyzed dispersion graph, respectively, in the step of analyzing and outputting the above.

Description

Backplane crystallization analysis system and the method thereof The present invention relates to a backplane crystallization analysis system and a method thereof, and more particularly to a backplane crystallization analysis system and a method thereof that can provide time-fast crystallization analysis while reducing costs by replacing the etching process through analysis using protrusions on the crystalline surface of grains formed after an annealing process of a display backplane (BP). Generally, LTPS or LTPO substrates are used as backplanes (BP) when manufacturing displays, but the electrical characteristics of these substrates differ depending on the grain formation state of the poly-Si after the annealing process. Therefore, when fabricating a display backplane (BP), it is essential to perform a crystallization analysis of poly-Si to check whether the grain has formed properly. In order to analyze the grains of poly-Si according to conventional technology, first, etching is performed on an annealed sample, and the sample is measured using SEM or TEM. If necessary, the grain boundaries are manually supplemented, and the analysis is performed using another image analysis program, thereby obtaining information such as the average size or average length of the grains. For example, defect analysis is important when inspecting the quality of wafers in semiconductor processes, and using an etchant (Secco etchant) makes it easy to identify crystal defects, particle size, boundaries, etc., allowing for the identification of potential problems that may occur in subsequent processes in advance. This etching process (Secco etching) is also widely used for crystallization analysis of display backplanes. That is, when a Secco etchant is applied to a silicon wafer or polycrystalline silicon structure of a crystallized backplane, etching occurs more effectively in defective areas, so the location of defects is clearly revealed, allowing grain boundaries and defects to be visually identified, which is useful for evaluating process quality. To perform such analysis, Secco etching is essential, but since Secco etching uses etchant, which is a hazardous substance, it is dangerous and requires caution. In addition, it would be ideal if the boundaries were clearly distinguished and analyzed in the image analysis program of SEM or TEM, but this is often not the case, and in such instances, there is a problem involving labor and inconvenience in having to manually supplement the boundaries and use an external image analysis program. FIG. 1 is a schematic diagram illustrating the configuration of a backplane crystallization analysis system according to one embodiment of the present invention. FIG. 2 is a diagram showing an example of acquiring a sampling image using the SEM of the present invention. FIG. 3 is a drawing showing an example of extracting the coordinates of a protrusion from a sampling image of the present invention. FIG. 4 is a diagram illustrating an example of adjusting the input parameters of the coordinates of the present invention. 5 is a drawing showing the calculated distance between each coordinate of the above-mentioned Fig. 4. FIG. 6 is a drawing showing the distance between each coordinate of FIG. 5 and the three nearest coordinates. FIG. 7 is a drawing showing an example of selecting the three coordinates of FIG. 6. FIG. 8 is a drawing illustrating an example of displaying the angle with the three coordinates in FIG. 6. FIG. 9 is a drawing illustrating an example of generating a boundary based on selected coordinate values of the present invention. FIG. 10 is a drawing that analyzes and graphs the boundary information generated in FIG. 9. FIG. 11 is a flowchart schematically illustrating a backplane crystallization analysis method according to one embodiment of the present invention. FIG. 12 is a drawing showing a comparison of the generated grain boundary of the present invention and the SEM image by etching. The present invention is susceptible to various modifications and may have various embodiments, and specific embodiments will be described in detail with reference to the drawings. However, this is not intended to limit the invention to specific embodiments, and it should be understood that the invention includes all modifications, equivalents, and substitutions that fall within the spirit and scope of the invention. Similar reference numerals have been used for similar components in the description of each drawing. Terms such as first, second, A, B, etc., may be used to describe various components, but said components shall not be limited by said terms. These terms are used solely for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be named the second component, and similarly, the second component may be named the first component. The term "and/or" includes a combination of multiple rela