KR-20260063097-A - HIGH PRESSSURE SUBSTRATE PROCESSING APPARATUS

KR20260063097AKR 20260063097 AKR20260063097 AKR 20260063097AKR-20260063097-A

Abstract

The present invention provides a high-pressure substrate processing apparatus comprising: an internal chamber formed to accommodate a processing gas having a processing pressure higher than atmospheric pressure and including gaseous hydrogen oxide; a loading platform formed to load a substrate to be processed by said processing gas; a fluid supply module having a discharge port formed to supply said gaseous hydrogen oxide to said processing chamber; and a heat blocking module disposed between said discharge port and said loading platform, formed to block heat that said gaseous hydrogen oxide discharged from said discharge port is to be transferred to said substrate.

Inventors

김동민
윤혜성
오세창

Assignees

주식회사 에이치피에스피

Dates

Publication Date: 20260507
Application Date: 20241030

Claims (20)

An internal chamber having a processing chamber formed to accommodate a processing gas containing gaseous hydrogen oxide and having a processing pressure higher than atmospheric pressure, and a loading platform formed to load a substrate to be processed by said processing gas; A fluid supply module having a discharge port formed to supply the gaseous hydrogen oxide to the processing chamber; and A high-pressure substrate processing device comprising a heat-blocking module disposed between the discharge port and the loading platform, formed to block heat that the gaseous hydrogen oxide discharged from the discharge port intends to transfer to the substrate.
In paragraph 1, The above internal chamber is, It includes an inner housing that accommodates the above-mentioned loading platform, and an inner door formed to open and close the inner housing and together with the inner housing to define the processing chamber, The above heat-blocking module is, A high-pressure substrate processing device installed on the inner door above.
In paragraph 2, The above loading platform is, A high-pressure substrate processing device supported by the above-mentioned heat-blocking module.
In paragraph 1, The above heat-blocking module is, A high-pressure substrate processing device comprising a bypass plate formed to bypass the flow of the gaseous hydrogen oxide toward the loading platform.
In paragraph 4, The above bypass plate is, A high-pressure substrate processing device formed from at least one material selected from silica, silicon carbide, and alumina.
In paragraph 4, The above heat-blocking module is, A high-pressure substrate processing device further comprising a protrusion extending downward from the above bypass plate.
In paragraph 1, The above heat-blocking module is, A high-pressure substrate processing apparatus comprising a cooling plate formed to cool the gaseous hydrogen oxide flowing toward the loading platform.
In Paragraph 7, The above cooling plate is, It is formed to accommodate a cooling fluid, and The above heat-blocking module is, A high-pressure substrate processing apparatus further comprising a cooling fluid line formed to supply the cooling fluid to the cooling plate.
In paragraph 8, The above internal chamber is, It includes an inner housing that accommodates the above-mentioned loading platform, and an inner door formed to open and close the inner housing and together with the inner housing to define the processing chamber, The above cooling fluid line is, A high-pressure substrate processing device positioned through the inner door above.
In paragraph 8, A sensing module formed to detect the temperature of the above-mentioned processing room; It further includes a control module formed to control the operation of the heat blocking module based on the detection result of the above detection module, and The above control module is, A high-pressure substrate processing device formed to control the flow rate of the cooling fluid supplied to the cooling plate through the cooling fluid line.
In Paragraph 10, The above detection module is, A first temperature gauge located at a height corresponding to the above-mentioned loading platform; and It includes a second temperature gauge located at a height corresponding to the above cooling plate, and The above control module is, A high-pressure substrate processing device formed to control the supply flow rate of the cooling fluid based on the measured values of the first temperature gauge and the second temperature gauge.
In Paragraph 7, The above cooling plate is, A case formed of a metal material; and A high-pressure substrate processing device comprising a coating layer formed on the outer surface of the above case.
In paragraph 1, A generating module comprising a generating chamber formed to receive a raw material fluid while communicating with the processing chamber and a generating chamber made of a soluble material, and a heating unit formed to heat the raw material fluid received in the generating chamber to generate the gaseous hydrogen oxide; and A high-pressure substrate processing apparatus further comprising a control module formed to control the operation of the heating unit so that a heat amount is provided to the generation chamber to generate the gaseous hydrogen oxide without generating the liquid hydrogen oxide from the raw material fluid.
In Paragraph 12, It further includes an outer chamber having a protective chamber formed to accommodate a protective gas having a protective pressure set in relation to the inner chamber and the processing pressure, and The above fluid supply module is, It is formed to supply the raw material fluid to the above-mentioned generation chamber and the protective gas to the above-mentioned protection chamber, and The above control module is, A high-pressure substrate processing device configured to control the operation of the above fluid supply module to supply the above raw material fluid to the generation chamber at a pressure higher than atmospheric pressure.
In Paragraph 14, The above-mentioned generation chamber is, Located in the atmosphere of the above-mentioned protective gas, The above control module is, A high-pressure substrate processing device formed to control the operation of the fluid supply module above and to adjust the supply amounts of the raw material fluid and the protective gas so that the processing pressure and the protective pressure become the set relationship.
An internal chamber having a processing chamber formed to accommodate a processing gas having a processing pressure higher than atmospheric pressure, and a loading platform formed to load a substrate to be processed by said processing gas; A fluid supply module having a discharge port formed to supply the processing gas to the processing chamber, and a heating unit formed to heat the processing gas supplied to the discharge port; and A high-pressure substrate processing device comprising a heat-blocking module disposed between the discharge port and the loading platform, formed to block heat intended to be transferred to the substrate by the processing gas discharged from the discharge port and heated by the heating unit.
In Paragraph 16, The above internal chamber is, It includes an inner housing that accommodates the above-mentioned loading platform, and an inner door formed to open and close the inner housing and together with the inner housing to define the processing chamber, The above heat-blocking module is, A high-pressure substrate processing device installed on the inner door above.
In Paragraph 16, The above heat-blocking module is, A high-pressure substrate processing device comprising a bypass plate formed to divert the flow of the processing gas toward the loading platform.
In Paragraph 16, The above heat-blocking module is, A high-pressure substrate processing device comprising a cooling plate containing a cooling fluid for cooling the processing gas flowing toward the loading platform.
In Paragraph 19, A sensing module formed to detect the temperature of the processing room; and It further includes a control module formed to control the operation of the heat blocking module based on the detection result of the above detection module, and The above control module is, A high-pressure substrate processing device formed to control the flow rate of the cooling fluid supplied to the cooling plate.

Description

High Pressure Substrate Processing Apparatus The present invention relates to a high-pressure substrate processing device. Generally, various processing steps are performed on the semiconductor substrate during the semiconductor device manufacturing process. Examples of such processing steps include oxidation, nitridation, ion implantation, and deposition. There is also a hydrogen or deuterium heat treatment process to improve the interface characteristics of the semiconductor device. The above process can be broadly classified into vacuum processes and high-pressure processes depending on the pressure of the gas acting on the substrate. If the former is performed at a pressure lower than atmospheric pressure, the latter is performed at a pressure higher than atmospheric pressure. The two processes have different characteristics and properties, so what is not a problem in one process may cause a major problem in the other. For example, when using steam in wet oxidation, unlike the vacuum process, impurities can be a major problem in the high-pressure process. Impurities may also occur as the chamber of the component for steam generation melts. FIG. 1 is a conceptual diagram of a high-pressure substrate processing device according to one embodiment of the present invention. FIG. 2 is a block diagram illustrating the controllable operation of the high-pressure substrate processing device of FIG. 1. Figure 3 is a cross-sectional view showing the generation module of Figure 2. Figure 4 is a graph showing the amount of silica dissolved according to temperature. FIG. 5 is a cross-sectional view showing an embodiment in which the heat-blocking module of FIG. 2 is installed in an internal chamber. FIG. 6 is a cross-sectional view showing one modified example of the heat-blocking module in FIG. 5. FIG. 7 is a cross-sectional view showing another embodiment in which the heat-blocking module of FIG. 2 is installed in an internal chamber. FIG. 8 is a perspective view showing the flow path of the cooling fluid in the heat-blocking module of FIG. 7. Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The present invention is not limited to the embodiments disclosed below, but can be modified and implemented in various different forms. The embodiments provided are merely intended to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention. Accordingly, the present invention should be understood not to be limited to the embodiments disclosed below, but to include all modifications, equivalents, and substitutions that fall within the technical spirit and scope of the present invention, as well as substituting or adding the configuration of any one embodiment with the configuration of another embodiment. The attached drawings are intended only to facilitate understanding of the embodiments disclosed in this specification, and the technical concept disclosed in this specification is not limited by the attached drawings; rather, it should be understood that they include all modifications, equivalents, and substitutions that fall within the spirit and technical scope of the invention. In the drawings, components may be depicted as being exaggeratedly large or small in size or thickness for the sake of convenience of understanding, but the scope of protection of the invention should not be interpreted restrictively as a result thereof. The terms used in this specification are used merely to describe specific embodiments or examples and are not intended to limit the invention. Furthermore, singular expressions include plural expressions unless the context clearly indicates otherwise. Terms such as "includes" or "consists of" in this specification are intended to indicate the existence of the features, numbers, steps, actions, components, parts, or combinations thereof described in this specification. That is, terms such as "includes" or "consists of" in this specification should be understood as not precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof. Terms including ordinal numbers, such as first, second, etc., may be used to describe various components, but said components are not limited by said terms. These terms are used solely for the purpose of distinguishing one component from another. When it is stated that one component is "connected/communicated" or "connected" to another component, it should be understood that while it may be directly connected/communicated or connected to that other component, there may also be other components in between. On the other hand, when it is stated that one component is "directly connected/communicated" or "directly connected" to another component, it should be understood that there are no other components in between. When it is stated that one co