KR-20260063112-A - System for processing substrate

KR20260063112AKR 20260063112 AKR20260063112 AKR 20260063112AKR-20260063112-A

Abstract

The present invention relates to a substrate processing system comprising a process chamber providing a process processing space for processing a substrate, a gas supply unit supplying process gas to the process chamber, a first gas injection device for diffusing and spraying process gas supplied from the gas supply unit to a central region of the substrate, and a second gas injection device for spraying process gas diffused by the first gas injection device onto the substrate, wherein the process gas sprayed from the gas supply unit to the center of the first gas injection device moves and flows from the center of the first gas injection device to the periphery, and can be sprayed while being supplied sequentially from the outer edge to the central part of the first gas injection device.

Inventors

신정섭
서동원

Assignees

한화세미텍 주식회사

Dates

Publication Date: 20260507
Application Date: 20241030

Claims (12)

A process chamber providing a process processing space for processing a substrate; A gas supply unit that supplies process gas to the above process chamber; A first gas injection device that diffuses and injects process gas supplied from the gas supply unit to the central region of the substrate; and It includes a second gas injection device that injects the process gas diffused by the first gas injection device into the substrate. The process gas injected from the gas supply unit into the center of the first gas injection device moves and flows from the center of the first gas injection device to the periphery, and is supplied and injected sequentially from the outer edge to the central part of the first gas injection device. Substrate processing system.
In claim 1, the first gas injection device is, It includes a spray body that forms an inlet groove that is drawn into a central area and forms a protrusion that protrudes along the edge area of the inlet groove. The process gas injected from the gas supply unit into the inlet groove moves from the center of the inlet groove toward the inner surface of the protrusion, and The injection body includes a plurality of nozzle portions to introduce the process gas through the inner surface of the protrusion and to inject it onto the outer surface of the protrusion and the bottom surface of the injection body. Substrate processing system.
In claim 2, the plurality of nozzle parts are, A first nozzle provided along the above-mentioned protrusion, introducing process gas injected from the gas supply unit into the inlet groove, and configured to diffuse and inject a portion of the introduced process gas from the injection body in a horizontal or/and inclined direction; and A second nozzle configured to sequentially flow the remainder of the process gas introduced through the first nozzle toward the center from the outermost edge of the injection body and inject it through the bottom surface of the injection body. Substrate processing system.
In claim 3, the first nozzle is, A horizontal injection hole penetrating the inner and outer sides horizontally from the above-mentioned protrusion; and Includes an inclined injection hole penetrating the inner and outer sides at an angle from the above-mentioned protrusion, Substrate processing system.
In Paragraph 4, A substrate processing system in which the inlets of the horizontal injection hole and the inclined injection hole are formed as one at the same location on the inner surface of the protrusion, and are formed separately in the horizontal direction and the inclined direction from the inlet.
In Paragraph 4, The inlet of the horizontal injection hole is positioned upwardly apart from the inlet of the inclined injection hole and is formed at a different location. The above horizontal injection hole is spaced apart from and formed separately above the above inclined injection hole. Substrate processing system.
In claim 4, the second nozzle is, A plurality of vertical injection holes provided in the central region of the injection body and configured to receive process gas introduced through the first nozzle and inject the process gas in a vertical direction. Substrate processing system.
In Article 7, The inlet of the outermost vertical injection hole among the plurality of vertical injection holes is positioned to be linked at a predetermined position of the inclined injection hole, and is configured to introduce and flow a portion of the process gas flowing into the inclined injection hole. Substrate processing system.
In Article 8, The plurality of vertical injection holes above form a horizontal flow path to flow and sequentially inject process gas from the outermost to the center. Substrate processing system.
In Article 9, The above horizontal flow path is formed in multiple stages that become lower towards the center, Substrate processing system.
In Article 7, The horizontal injection hole, the inclined injection hole, and the vertical injection hole are formed such that their inner diameters gradually decrease from the outermost point toward the center. Substrate processing system.
In Article 7, The above vertical injection holes are provided such that the distance between adjacent vertical injection holes narrows as they move from the outermost to the center. Substrate processing system.

Description

Substrate processing system The present invention relates to a substrate processing system, and more specifically, to a substrate processing system that enables a process gas supplied from a gas supply unit to a first gas injection device to be uniformly supplied to the entire area of a second gas injection device. To deposit a thin film on a substrate, thin film deposition methods such as Chemical Vapor Deposition (CVD) or Atomic Layer Deposition (ALD) may be used. In the case of Chemical Vapor Deposition or Atomic Layer Deposition, a thin film can be formed by causing a chemical reaction of the process gas on the surface of the substrate. In particular, in the case of Atomic Layer Deposition, since a single layer of the process gas attached to the surface of the substrate forms the thin film, it is possible to form a thin film with a thickness similar to the diameter of an atom. Plasma Enhanced Chemical Vapor Deposition (PECVD) or Plasma Enhanced Atomic Layer Deposition (PEALD) can be used to extend the process temperature range. Since PECVD and PEALD enable processing at lower temperatures compared to PECVD and PEALD, the physical properties of the thin film can be improved. A substrate processing system for performing a process on a substrate may include a process chamber and a gas injection device. The process chamber provides a space for fixing the substrate, and the gas injection device may be configured to inject process gas supplied from a central gas supply unit onto the substrate. The gas injection device may include a plurality of injection holes for injecting process gas. In order to uniformly distribute gas over a circular semiconductor substrate, at least two gas injection devices may be installed between the central gas supply unit and the circular semiconductor substrate. The gas supply device may include a first gas supply device (also called a 'baffle') that receives gas primarily from a central gas supply unit, and a second gas supply device (also called a 'showerhead') that is positioned between the first gas supply device and a circular semiconductor substrate and sprays process gas onto the circular semiconductor substrate. The process gas supplied from the central gas supply unit is injected based on the center of the semiconductor circular substrate, and the injection holes of the secondary gas injection device can be configured to have the same area as the substrate so as to be supplied uniformly to the substrate. However, as the gas supply unit supplies process gas starting from the center of the substrate, the process gas is over-concentrated in the center compared to the outer edge of the substrate, which may result in reduced deposition uniformity. That is, when supply gas is injected from the central gas supply unit through the first gas supply device to the second gas supply device, it may be supplied concentratedly toward the center of the second gas supply device or supplied sparsely toward a predetermined location, for example, the periphery of the second gas supply device. As a result, the distribution of the process gas injected from the second gas supply device becomes non-uniform, leading to a problem where the quality of the thin film deposited on the substrate is reduced. For example, the thickness of the process gas film deposited on a substrate may be higher at the center and decrease towards the outer edge. Additionally, while the number or size of the injection holes in the gas injection device are adjusted to improve the uniformity of process gas deposition on the substrate surface, the gas supply unit itself is located at the center of the substrate; as the gas is injected toward the center, the film thickness at the center of the substrate is inevitably thicker. Therefore, there is a need for an invention that ensures the distribution of the process gas supplied from the central gas supply unit and sprayed through the secondary showerhead is uniformly formed. FIG. 1 is a schematic diagram of a battery attachment/detachment system for a special purpose vehicle according to one embodiment of the present invention. FIG. 2 is a schematic diagram of the configurations for providing process gas to a substrate (W) of a substrate processing system (10) according to one embodiment of the present invention. FIG. 3 is a perspective view schematically showing a first gas injection device (510) in a substrate processing system according to one embodiment of the present invention. FIGS. 4a and 4b are schematic cross-sectional views of a first gas injection device in a substrate processing system according to one embodiment of the present invention (straight line of flow path, different or same connection of inlets). FIGS. 5a and 5b are schematic cross-sectional views of a first gas injection device (510) in a substrate processing system (10) according to one embodiment of the present invention (stage connection of the flow path, different or same connection of inlets). The