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KR-20260063238-A - METHOD AND APPARATUS FOR ETCHING 2D MATERIALS

KR20260063238AKR 20260063238 AKR20260063238 AKR 20260063238AKR-20260063238-A

Abstract

The present invention discloses a 2D material etching method and apparatus. The 2D material etching method is characterized by comprising a first step of generating plasma while a 2D material is placed on a substrate in a chamber, and a second step of applying a pulsed positive voltage to the substrate.

Inventors

  • 박종배
  • 김영우
  • 윤정식
  • 김대철
  • 손장엽
  • 배수강
  • 정윤조
  • 최은진

Assignees

  • 한국핵융합에너지연구원

Dates

Publication Date
20260507
Application Date
20241030

Claims (11)

  1. A first step of generating plasma while a 2D material in the chamber is placed on a substrate, and A second step of applying a pulsed positive voltage to the above substrate, 2D material etching method.
  2. In paragraph 1, The above plasma is characterized as being a He plasma without negative ions, 2D material etching method.
  3. In paragraph 1, The above 2D material is characterized by being one or more selected from the group comprising graphene, hBN (hexagonal boron nitride), MoS₂ , and TMDC (Transition Metal Dichalcogenides). 2D material etching method.
  4. In paragraph 1, Characterized by the pulsed positive voltage applied to the substrate being 100 to 1500 V and 1 to 1000 KHz, 2D material etching method.
  5. In paragraph 4, Characterized by the pulsed positive voltage applied to the substrate being 300 to 600 V and 1 to 100 KHz, 2D material etching method.
  6. In paragraph 1, Characterized by a duty ratio of 1 to 99%, 2D material etching method.
  7. In paragraph 6, Characterized by a duty ratio of 20 to 80%, 2D material etching method.
  8. In paragraph 1, Characterized by irradiating a 2D material on a substrate with energy electrons. 2D material etching method.
  9. In paragraph 1, Characterized by the ability to perform layer-by-layer etching from the top surface of a 2D material, 2D material etching method.
  10. In Paragraph 9, The above etching method is characterized by enabling large-area etching of the 2D material. 2D material etching method.
  11. Chamber; A plasma generating means capable of generating plasma in the upper part of the above chamber; A substrate located at the bottom of the chamber and capable of placing a 2D material; and A power supply means configured to apply a pulsed positive voltage to one surface of the above substrate, 2D material etching device.

Description

Method and apparatus for etching 2D materials The present invention relates to a method and apparatus for etching 2D materials, and more specifically, to a method and apparatus for performing layer-by-layer etching of 2D materials by irradiating electrons in a plasma onto 2D materials. Conventional 2D material etching techniques are primarily performed using traditional chemical or physical methods. However, these methods often result in non-uniform etching or cause problems such as the formation of defects on the surface of the material. In particular, when using plasmas containing negative ions, such as hydrogen plasma, there is a risk that hydrogen ions will penetrate into the material, causing bubble formation and physical damage. These issues create limitations in increasing etching precision depending on the characteristics of the 2D material. FIG. 1 is a schematic diagram of a 2D material etching method and apparatus according to one embodiment of the present invention. FIG. 2 shows (a,b) OM images, AFM images and analysis results and (c) Raman analysis results of graphene according to one embodiment of the present invention. FIG. 3 shows (a,b) OM images, AFM images and analysis results and (c) Raman analysis results of BN according to one embodiment of the present invention. FIG. 4 shows (a,b) OM images, AFM images and analysis results and (c) Raman analysis results of MoS₂ according to one embodiment of the present invention. FIG. 5 is a schematic diagram illustrating the process of layer-by-layer etching of a 2D material according to one embodiment of the present invention. Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings. Since the present invention is susceptible to various modifications and may take various forms, specific embodiments are illustrated in the drawings and described in detail in the text. However, this is not intended to limit the present invention to the specific disclosed forms, and it should be understood that it includes all modifications, equivalents, and substitutions that fall within the spirit and scope of the present invention. Similar reference numerals have been used for similar components in the description of each drawing. In the attached drawings, the dimensions of the structures are shown enlarged compared to the actual dimensions for the clarity of the present invention. In addition, the description of one aspect of the present invention may be applied identically or similarly to the description of other aspects for identical or similar configurations or terms. Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as generally understood by those skilled in the art to which the present invention pertains. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and should not be interpreted in an ideal or overly formal sense unless explicitly defined in this application. The embodiments of the present invention are described below. However, the embodiments described below are merely partial embodiments of the present invention, and the scope of the present invention is not limited to the following embodiments. Example 1 Graphene is placed on a substrate inside the chamber. Plasma was generated using an ICP source under conditions of 200W RF power, He, and 3.5 mTorr. The plasma generated at this time is a He plasma without negative ions. Subsequently, a pulsed positive voltage was applied to the substrate. The positive voltage range used at this time was 300 to 600 V, the pulse was performed at a frequency of 10 KHz, and the duty ratio (on/off ratio) was 20 to 80%. FIG. 1 is a schematic diagram of a 2D material etching method and apparatus according to an embodiment of the present invention. Example 2 BN is placed on a substrate inside the chamber. Other conditions are the same as in Example 1. Example 3 MoS₂ is placed on a substrate inside the chamber. Other conditions are the same as in Example 1. Etching verification and performance verification methods To verify the layer-by-layer etching of the 2D material according to the above example, an optical microscope (OM), an atomic force microscope (AFM), and Raman spectroscopy were used. The presence or absence of etching in 2D materials was confirmed using optical microscope (OM) images. Two-dimensional materials exhibit color variations depending on their thickness, and changes in thickness after etching can be primarily confirmed through optical microscope observation. While this allows for the detection of thickness changes, it does not reveal exactly how much thickness was etched. In other words, only the presence or absence of thickness changes can be easily verified. Additionally, it may be possible to detect the formation of surface defects, as well as the cleanliness an