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KR-20260063288-A - SUBSTRATE PROCESSING APPARATUS INCLUDING ANTENNAS

KR20260063288AKR 20260063288 AKR20260063288 AKR 20260063288AKR-20260063288-A

Abstract

A substrate processing device according to an embodiment of the present invention comprises: a boat disposed within a chamber and loading substrates; a first antenna and a second antenna connected to the side wall of the chamber and disposed to face each other; a first signal generator that transmits a first microwave to the first antenna; a first rod connected to the first antenna to remove microwaves received from the first antenna; a second rod connected to the second antenna to remove microwaves received from the second antenna; and a control unit configured to control at least the first signal generator.

Inventors

  • 강현석
  • 전형운
  • 김연태
  • 김이환
  • 방선우
  • 양광현
  • 임성용
  • 전현진

Assignees

  • 삼성전자주식회사

Dates

Publication Date
20260507
Application Date
20241030

Claims (10)

  1. A boat positioned inside a chamber and loaded with substrates; A first antenna and a second antenna connected to the side wall of the chamber and positioned to face each other; A first signal generator that transmits a first microwave to the first antenna; A first rod connected to the first antenna to remove microwaves received from the first antenna; A second rod connected to the second antenna to remove microwaves received from the second antenna; and A substrate processing device comprising at least a control unit configured to control the first signal generator.
  2. In Article 1, The second antenna receives the first microwave transmitted from the first antenna, and The above second load is a substrate processing device that removes the first microwave received from the above second antenna.
  3. In Article 1, A substrate processing device in which the width of the first antenna increases as it gets closer to the chamber.
  4. In Article 1, It further includes a first circulator disposed between the first antenna and the first signal generator, and The above-mentioned first circulator is a substrate processing device that transmits microwaves received from the first antenna to the first load.
  5. In Paragraph 4, It further includes a first sensor configured to be positioned between the first antenna and the first circulator to measure the phase of the first microwave, and The first sensor is a substrate processing device that transmits the first phase value of the first microwave to the control unit.
  6. In Article 5, A substrate processing device configured such that the control unit above controls the phase of the first microwave based on a first phase value measured from the first sensor.
  7. In Article 1, It further includes a second signal generator that transmits a second microwave to the second antenna, The above second microwave is a substrate processing device that transmits the above second microwave to the above substrates through the above second antenna.
  8. In Article 7, It further includes a second circulator disposed between the second antenna and the second signal generator, and The above second circulator is a substrate processing device that transmits microwaves received from the above second antenna to the above second load.
  9. A boat positioned inside a chamber and loaded with substrates; A first antenna and a second antenna connected to the side wall of the chamber with the substrates in between; A first signal generator that transmits a first microwave to the first antenna; A first rod connected to the first antenna to remove microwaves received from the first antenna; A second rod connected to the second antenna to remove microwaves received from the second antenna; and It includes a control unit configured to control at least the first signal generator, and The above substrates are heated by the first microwave, and A substrate processing device in which the first microwave is transmitted to a second antenna and removed by the second load.
  10. In Article 9, It further includes a second signal generator that transmits a second microwave to the second antenna, The above control unit is further configured to control the second signal generator, and The above substrates are heated by the second microwave and the substrate processing device.

Description

Method for manufacturing a semiconductor device including antennas {SUBSTRATE PROCESSING APPARATUS INCLUDING ANTENNAS} The present invention relates to a substrate processing device including an antenna. As demands for high performance, high speed, and/or multifunctionality in semiconductor devices increase, the integration density of semiconductor devices is rising. In the semiconductor device manufacturing process, processes such as thin film deposition, etching, and annealing may be performed on wafers. To improve the productivity of the semiconductor device manufacturing process, heating the wafer rapidly and uniformly is a critical issue. FIG. 1 is a cross-sectional view of a substrate processing apparatus according to an exemplary embodiment. Figure 2 is a plan view of the substrate processing device shown in Figure 1. FIG. 3 is a perspective view of an antenna according to an exemplary embodiment. FIGS. 4a to 4c are perspective views of an antenna according to an exemplary embodiment. FIG. 5 is a conceptual diagram illustrating the transmission of microwaves from an antenna according to comparative examples and exemplary embodiments. FIGS. 6 and 7 illustrate the frequency change of microwaves over time according to exemplary embodiments. FIGS. 8 and FIGS. 9 are plan views of a substrate processing apparatus according to exemplary embodiments. FIGS. 10 and FIGS. 11 are cross-sectional views of a substrate processing apparatus according to exemplary embodiments. Hereinafter, preferred embodiments of the present invention will be described as follows with reference to the attached drawings. FIG. 1 is a cross-sectional view of a substrate processing apparatus according to an exemplary embodiment. FIG. 2 is a plan view of the substrate processing apparatus shown in FIG. 1. Referring to FIGS. 1 and 2, a substrate processing device (100) according to one embodiment may include a chamber (110), antennas (120), sensors (125), windows (130), tuners (140), circulators (150), signal generators (160), loads (170), and a control unit (180). In one embodiment, the chamber (110) may be a deposition chamber for growing a thin film on a substrate (W). For example, the chamber (110) may be a chamber for epitaxial growth or selective epitaxial growth (SEG), a low pressure chemical vapor deposition (LPCVD) chamber, or a very low pressure chemical vapor deposition (VLPCVD) chamber. However, the chamber (110) is not limited to the chambers mentioned above. A heating process can be performed on a plurality of substrates (W) within the chamber (110). For example, the chamber (110) may be a batch-type chamber, and the substrates (W) may be arranged in a vertical stack. For example, a drive shaft (112), a support (114), and a boat (116) may be arranged within the chamber (110). The drive shaft (112) and the support (114) may be positioned in the lower part of the chamber (110). The support (114) may be positioned on the drive shaft (112). A boat (116) may be positioned on the support (114), and the support (114) may support the boat (116). The boat (116) may accommodate a plurality of substrates (W) arranged in a vertical direction. The upper surface of the substrates (W) may be positioned to face the vertical direction (Z direction). The drive shaft (112) may rotate the support (114), the boat (116), and the substrates (W) in a horizontal direction so that the substrates (W) are heated evenly during the heating process. The substrate processing device (100) may further include an exhaust port (118) connected to a chamber (110). The exhaust port (118) may be connected to a lower portion of the chamber (110) and may discharge process gases and byproducts within the chamber (110) and regulate the pressure inside the chamber (110). For example, the exhaust port (118) may be connected to a vacuum pump (P). The antennas (120) can be connected to the side walls of the chamber (110) and can transmit microwaves (M1, M2) to substrates (W) within the chamber (110). For example, as shown in FIG. 2, the chamber (110) may include a first side wall (110a), a second side wall (110b), a third side wall (110c), and a fourth side wall (110d). The first side wall (110a) may face the second side wall (110b), and the third side wall (110c) may face the fourth side wall (110d). The antennas (120) may include first antennas (120a) and second antennas (120b) arranged to face each other. For example, the first antennas (120a) and the second antennas (120b) may each be connected to the first sidewall (110a) and the second sidewall (110b) of the chamber (110). The first antennas (120a) may be spaced perpendicularly apart from each other, and the second antennas (120b) may be spaced perpendicularly apart from each other. According to an embodiment, one first antenna (120a) and one second antenna (120b) may each be connected to the first sidewall (110a) and the second sidewall (110b). Windows (130) may be placed on the side walls of the chamber (110) and