KR-20260063365-A - EUV Mixed Solvent, EUV Photoresist Composition, and Method for Forming Patterns Using the Same

Abstract

A mixed solvent for EUV comprising a first solvent having a polarity range (dP) of 11 or higher based on a Hansen solubility parameter and a second solvent different from the first solvent, an EUV resist composition comprising the same, and a method for forming a pattern using the same are provided. Since the mixed solvent of the present invention has a composition specialized for EUV resist compositions, not only is a photoresist thin film well formed during coating, but the amount of photoresist composition sprayed during the process is also significantly reduced, thereby dramatically improving processability and economic efficiency.

Inventors

• 강율
• 노재승
• 서아람
• 김한비
• 이관흠
• 최대용

Assignees

• 삼성전자주식회사

Dates

Publication Date

20260507

Application Date

20241030

Claims (10)

1. A first solvent having a polarity range (dP) of 11 or higher based on the Hansen solubility parameter, and A second solvent different from the first solvent above A mixed solvent for EUV containing
2. In paragraph 1, The first solvent above is a mixed solvent for EUV containing cyclopentanone.
3. In paragraph 2, The above cyclopentanone is an EUV mixed solvent included in an amount of 0.1% to 20% by weight relative to the total amount of the EUV mixed solvent.
4. In paragraph 1, The second solvent is a mixed solvent for EUV comprising at least one selected from the group consisting of propyleneglycol monomethyl ether acetate, propyl cellosove, n-butyl acetate, methyl 3-methoxypropionate, propyleneglycol monomethyl ether, methyl 2-hydroxyisobutyrate, and ethyl lactate.
5. Includes a mixed solvent for EUV, The above EUV mixed solvent is an EUV photoresist composition comprising a first solvent having a polarity range (dP) of 11 or higher based on the Hansen solubility parameter and a second solvent different from the first solvent.
6. In paragraph 5, The above-mentioned photoresist composition for EUV is A resin comprising at least one selected from the group consisting of polyhydroxystyrene (PHS) resins, acrylic resins, and cardo resins; Mineral generator; and ??cheo; An EUV photoresist composition that further comprises an organic photoresist composition for EUV.
7. In paragraph 6, The above-mentioned organic EUV photoresist composition is, with respect to the total amount of the above-mentioned organic EUV photoresist composition 0.5% to 28% by weight of the above resin; 1% to 50% by weight of the above-mentioned light-generating agent; The above ?? 0.0001 wt% to 0.05 wt% and 49% to 98% by weight of the above EUV mixed solvent A photoresist composition for EUV comprising
8. In paragraph 5, The above-mentioned photoresist composition for EUV is An EUV photoresist composition further comprising a resin containing tin oxide clusters.
9. In paragraph 8, The EUV mixed solvent in the above EUV inorganic photoresist composition further comprises methyl isobutyl carbinol.
10. A step of coating an EUV photoresist composition comprising a resin and a mixed solvent for EUV comprising a first solvent having a polarity range (dP) of 11 or higher based on a Hansen solubility parameter and a second solvent different from the first solvent; Step of exposing with EUV; and developing stage A pattern forming method including

Description

EUV Mixed Solvent, EUV Photoresist Composition, and Method for Forming Patterns Using the Same The present invention relates to a mixed solvent having a composition specialized for Extreme Ultraviolet (EUV), a photoresist composition for EUV containing the same, and a method for forming a pattern using EUV as a light source using the said composition. Extreme UltraViolet (EUV) technology utilizes light (wavelength) of 13.5 nm and has recently been widely used to implement fine patterns of semiconductors smaller than 2 nm. However, because the EUV source has a lower number of photons (1/14 times) compared to Deep UltraViolet (DUV) which uses relatively longer wavelengths of 193 nm (ArF) or 248 nm (KrF) at the same dose, pattern performance degradation occurs due to stochastic effects such as the RLS (resolution, line edge roughness, sensitivity) trade-off. To address these issues, photoresist manufacturers are employing a strategy of adding approximately five times the amount of photoacid generators (PAGs) compared to DUV PRs to produce high-sensitivity EUV photoresists (PRs). Generally, the PAGs used in EUV PRs are ionic types, and their chemical structures possess strong polarity. Commonly used ether-based PR solvents (e.g., propylene glycol methyl ether acetate, PGMEA) have relatively low polarity and therefore exhibit low solubility for PAGs. The low solubility of PAG in the solvent constituting the EUV photoresist can cause aggregation between PAG and EUV resin and form unwanted organic particles. In other words, while the design and composition of PRs have been optimized for EUV characteristics, an optimized EUV solvent composition has not been developed to date. Consequently, there has been a rapidly increasing need for a solvent composition that can be universally used for EUV PRs containing an excess amount of PAG. Figures 1 to 4 are graphs showing that the storage stability of a mixed solvent for EUV according to one aspect is excellent. Figure 5 is a graph showing coating defects when coating the EUV photoresist compositions according to Example 1 and Comparative Example 1, respectively. Figure 6 is a graph comparing a coating defect map when coating the EUV photoresist composition according to Example 1 and coating defects according to a dummy dispense interval time condition that proceeds as a non-process during the lithography process. Figure 7 is a coating defect map when coating the EUV photoresist composition according to Comparative Example 1. Hereinafter, various embodiments of the present invention will be described in detail with reference to the attached drawings so that those skilled in the art can easily implement the present invention. The present invention may be embodied in various different forms and is not limited to the embodiments described herein. To clearly explain the present invention, parts unrelated to the explanation have been omitted, and the same reference numerals are used for identical or similar components throughout the specification. Furthermore, the size and thickness of each component shown in the drawings are depicted arbitrarily for convenience of explanation, and thus the present invention is not necessarily limited to what is illustrated. Thicknesses have been enlarged in the drawings to clearly represent various layers and regions. Additionally, for convenience of explanation, the thickness of some layers and regions has been exaggerated in the drawings. Furthermore, when it is said that a part, such as a layer, membrane, region, or plate, is "on" or "on" another part, this includes not only the case where it is "directly above" the other part, but also the case where there is another part in between. Conversely, when it is said that a part is "directly above" another part, it means that there is no other part in between. Also, saying that a part is "on" or "on" a reference part means that it is located above or below the reference part, and does not necessarily mean that it is located "on" or "on" in the direction opposite to gravity. Furthermore, throughout the specification, when a part is described as "including" a certain component, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components. Additionally, throughout the specification, "plane" refers to the subject part as viewed from above, and "cross-section" refers to the cross-section of the subject part cut vertically as viewed from the side. Additionally, unless otherwise specifically stated throughout the specification, "alkyl group" means a C1 to C20 alkyl group, "alkenyl group" means a C2 to C20 alkenyl group, "cycloalkenyl group" means a C3 to C20 cycloalkenyl group, "heterocycloalkenyl group" means a C3 to C20 heterocycloalkenyl group, "aryl group" means a C6 to C20 aryl group, "arylalkyl group" means a C6 to C20 arylalkyl group, "alkylene group" means a C1 to C20 alkylene group, "arylene group" means a C6 to C20 arylene g