KR-20260063366-A - Substrate processing apparatus

KR20260063366AKR 20260063366 AKR20260063366 AKR 20260063366AKR-20260063366-A

Abstract

A substrate processing device according to one embodiment includes a chamber providing a process space; a support member located inside the chamber and supporting a substrate; and a shower head located inside the chamber and spraying gas, wherein the shower head includes a center area and an edge spraying area located on the outer perimeter of the center area, wherein a control gas spraying hole is located in the center area and a process gas spraying hole is located in the edge spraying area.

Inventors

지나영
김대홍
김익수
장경태

Assignees

삼성전자주식회사

Dates

Publication Date: 20260507
Application Date: 20241030

Claims (10)

A chamber providing a process space; A support member located inside the chamber and supporting a substrate; and It includes a shower head located inside the chamber and spraying gas, The shower head includes a center area and an edge spray area located on the outer perimeter of the center area, and A substrate processing device in which a control gas injection hole is located in the center area and a process gas injection hole is located in the edge injection area.
In paragraph 1, A substrate processing apparatus further comprising an edge plasma excitation member that allows energy for plasma excitation to be applied to the process space.
In paragraph 2, The above edge plasma excitation element is, A lower edge electrode located on the outer perimeter of the support member; and A substrate processing device including an upper edge electrode located on the outer perimeter of the shower head.
In paragraph 2, The above edge plasma excitation member is a substrate processing device having an antenna structure and located outside the chamber.
In paragraph 1, A substrate processing apparatus further comprising a process gas supply member connected to the above process gas injection hole and supplying a process gas of C₂H₂ .
In paragraph 1, A substrate processing device further comprising a plasma control plate positioned between the shower head and the support member.
A chamber providing a process space; A support member located inside the chamber and supporting a substrate; A shower head located inside the chamber above and spraying gas; A process gas supply member connected to the above shower head to supply process gas; A regulating gas supply member connected to the shower head above to supply regulating gas; and It includes an edge plasma excitation member that allows energy for plasma excitation to be applied to the process space, and The shower head includes a center area and an edge spray area located on the outer perimeter of the center area, and A substrate processing device having a control gas injection hole for injecting the control gas located in the center area and a process gas injection hole for injecting the process gas located in the edge injection area.
In Paragraph 7, A substrate processing apparatus in which the above-mentioned control gas is an inert gas and the above-mentioned process gas is a compound containing carbon atoms.
A chamber providing a process space; A support member located inside the chamber and supporting a substrate; A shower head located inside the chamber above and spraying gas; A process gas supply member connected to the above shower head to supply process gas; A regulating gas supply member connected to the above shower head to supply regulating gas; A plasma control plate positioned between the shower head and the support member; and It includes an edge plasma excitation member that allows energy for plasma excitation to be applied to the process space, and The shower head includes a center area and an edge spray area located on the outer perimeter of the center area, and A substrate processing device having a control gas injection hole for injecting the control gas located in the center area and a process gas injection hole for injecting the process gas located in the edge injection area.
In Paragraph 9, A substrate processing device in which the area of the plasma control plate corresponds to the area of the upper surface of the support member, and the plasma control plate is provided to be movable in the vertical direction.

Description

Substrate processing apparatus The present disclosure relates to a substrate processing apparatus. To manufacture semiconductor devices, various processes such as photolithography, etching, ashing, ion implantation, thin film deposition, and cleaning are performed on a substrate to form a desired pattern on the substrate. Some of these semiconductor manufacturing processes can be performed using plasma. Generally, to form plasma, an electromagnetic field is created within the internal space of a chamber, and this electromagnetic field excites the process gas supplied inside the chamber into a plasma state. FIG. 1 is a drawing showing a substrate processing apparatus according to one embodiment. Figure 2 is a bottom view of the shower head of Figure 1. Figure 3 is a cross-sectional view of the central area of the shower head. Figure 4 is a drawing showing the support member, shower head, and plasma control plate of Figure 1. Figure 5 is a diagram showing the flow of gas supplied by the shower head during the substrate processing process. Figure 6 is a diagram showing the bevel edge of a substrate before the substrate processing process is performed. Figure 7 is a diagram showing the bevel edge of a substrate after the substrate processing process is performed. FIG. 8 is a drawing showing a substrate processing apparatus according to another embodiment. Fig. 9 is a bottom view of the shower head of Fig. 8. Fig. 10 is a bottom view of the plasma control plate of Fig. 8. FIG. 11 is a drawing showing a substrate processing apparatus according to another embodiment. Fig. 12 is a bottom view of the shower head of Fig. 11. FIG. 13 is a drawing showing a substrate processing apparatus according to another embodiment. FIG. 14 is a drawing showing a substrate processing apparatus according to another embodiment. Hereinafter, various embodiments of the present invention will be described in detail with reference to the attached drawings so that those skilled in the art can easily implement the present invention. The present invention may be embodied in various different forms and is not limited to the embodiments described herein. To clearly explain the present invention, parts unrelated to the explanation have been omitted, and the same reference numerals are used for identical or similar components throughout the specification. Furthermore, the size and thickness of each component shown in the drawings are depicted arbitrarily for convenience of explanation, and thus the present invention is not necessarily limited to what is illustrated. Thicknesses have been enlarged in the drawings to clearly represent various layers and regions. Additionally, for convenience of explanation, the thickness of some layers and regions has been exaggerated in the drawings. Furthermore, when it is said that a part, such as a layer, membrane, region, or plate, is "on" or "on" another part, this includes not only the case where it is "directly above" the other part, but also the case where there is another part in between. Conversely, when it is said that a part is "directly above" another part, it means that there is no other part in between. Also, saying that a part is "on" or "on" a reference part means that it is located above or below the reference part, and does not necessarily mean that it is located "on" or "on" in the direction opposite to gravity. Furthermore, throughout the specification, when a part is described as "including" a certain component, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components. Additionally, throughout the specification, "planar" means when the subject part is viewed from above, and "cross-sectional" means when the cross-section obtained by vertically cutting the subject part is viewed from the side. FIG. 1 is a drawing showing a substrate processing device (1) according to one embodiment. Referring to FIG. 1, a substrate processing device (1) according to one embodiment may include a chamber (10), a support member (20), a shower head (30), a plasma control plate (35), an edge plasma excitation member (50), and an excitation supply unit (70). A substrate processing device (1) processes a substrate (S). The substrate processing device (1) can process the substrate (S) using plasma. The substrate processing device (1) can perform a deposition process on the bevel edge region of the substrate (S) using excited plasma. That is, the substrate processing device (1) can perform a deposition process on the upper surface of the edge region of the substrate (S) using excited plasma. In addition, the substrate processing device (1) can perform a deposition process on the side surface of the edge region of the substrate (S) using excited plasma. In addition, the substrate processing device (1) can perform a deposition process on the lower surface of the edge region of the substrate (S) using excited plasma. The substrate (S) may be a wafer