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KR-20260063390-A - SUBSTRATE SUPPORITNG UITN AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME

KR20260063390AKR 20260063390 AKR20260063390 AKR 20260063390AKR-20260063390-A

Abstract

The present invention relates to a substrate support unit and a substrate processing apparatus including the same. A substrate support unit according to one embodiment of the present invention comprises: a puck on which a substrate is placed; a base plate for supporting the puck; and a ring assembly arranged along the circumference of the puck and the base plate, wherein the ring assembly includes a pad and a coating layer is formed along the outer surface of the pad.

Inventors

  • 이기룡
  • 성진일
  • 김수웅

Assignees

  • 세메스 주식회사

Dates

Publication Date
20260507
Application Date
20241030

Claims (20)

  1. A puck on which the substrate is mounted; A base plate for supporting the above puck; and A ring assembly disposed along the perimeter of the puck and the base plate; Includes, The above ring assembly includes a pad, and A substrate support unit characterized by having a coating layer formed along the outer surface of the pad.
  2. In paragraph 1, The above coating layer is, A substrate support unit characterized by comprising at least one of Teflon, Al2O3, and Y2O3.
  3. In paragraph 1, The above coating layer is, A substrate support unit characterized by being formed using a spray coating method or an atomic layer deposition method.
  4. In paragraph 3, A substrate support unit characterized by the coating layer formed by the above spray coating method having a thickness of 1 μm to 100 μm.
  5. In paragraph 3, A substrate support unit characterized by the coating layer formed by the above atomic layer deposition method having a thickness of 100 nm to 500 nm.
  6. In paragraph 1, The above ring assembly is, A first ring disposed along the circumference of the above puck; and A second ring disposed along the perimeter of the base plate; A substrate support unit characterized by including
  7. In paragraph 6, The above pad is, A substrate support unit characterized by being formed between the base plate and the first ring.
  8. A chamber having a processing space inside; A substrate support unit disposed in the above processing space and for supporting a substrate; and A gas supply unit for supplying process gas to the above processing space; Includes, The above substrate support unit is, A puck on which the above substrate is placed; A base plate for supporting the above puck; and A ring assembly disposed along the perimeter of the puck and the base plate; Includes, The above ring assembly includes a pad, and A substrate processing device characterized by having a coating layer formed along the outer surface of the pad.
  9. In paragraph 8, The above coating layer is, A substrate processing apparatus characterized by comprising at least one of Teflon, Al2O3, and Y2O3.
  10. In paragraph 8, The above coating layer is, A substrate processing apparatus characterized by being formed using a spray coating method or an atomic layer deposition method.
  11. In paragraph 8, The process gas supplied into the interior of the above chamber is, A substrate processing device characterized by having an acidic nature.
  12. In Paragraph 11, The above coating layer is, A substrate processing apparatus characterized by protecting the pad from the above-mentioned acidic process gas.
  13. In Paragraph 12, The above ring assembly is, A first ring arranged along the circumference of the above puck; A second ring disposed along the perimeter of the base plate; and A substrate processing apparatus characterized by further including a third ring formed along the outer surface of the first ring and the second ring.
  14. In Paragraph 13, The above pad is made of silicone material, and A substrate processing device characterized by being formed between the base plate and the first ring.
  15. In paragraph 8, The above substrate processing device is, A substrate processing apparatus characterized by further including a plasma generation unit for plasmaizing the process gas supplied to the above processing space.
  16. A chamber having a processing space inside; A substrate support unit disposed in the above processing space and for supporting a substrate; A gas supply unit for supplying process gas to the above processing space; and A plasma generation unit for plasmafiing the above process gas; Includes, The above substrate support unit is, A puck on which the above substrate is placed; A base plate for supporting the above puck; and A ring assembly disposed along the perimeter of the puck and the base plate; Includes, The above ring assembly includes a pad, and A coating layer is formed along the outer surface of the above pad, and The process gas supplied to the processing space of the above chamber is acidic, and A substrate processing apparatus characterized by the coating layer protecting the pad from the acidic process gas.
  17. In Paragraph 16, The above coating layer is, A substrate processing apparatus characterized by being formed using a spray coating method or an atomic layer deposition method.
  18. In Paragraph 16, The above coating layer is, A substrate processing apparatus characterized by comprising at least one of Teflon, Al2O3, and Y2O3.
  19. In Paragraph 16, The above ring assembly is, A first ring arranged along the circumference of the above puck; A second ring disposed along the perimeter of the base plate; and A substrate processing apparatus characterized by further including a third ring formed along the outer surface of the first ring and the second ring.
  20. In Paragraph 19, The above pad is made of silicone material and has a ring shape, and A substrate processing device characterized by being formed between the base plate and the first ring.

Description

Substrate supporting unit and substrate processing apparatus including the same The present invention relates to a substrate support unit and a substrate processing apparatus including the same. More specifically, it relates to a substrate processing apparatus for improving the lifespan of a pad formed inside a ring assembly. Generally, the process for manufacturing a semiconductor device includes a deposition process for forming a film on a semiconductor substrate, a chemical/mechanical polishing process for planarizing the film, a photoresist process for forming a photoresist pattern on the film, an etching process for forming the film into a pattern having electrical characteristics using the photoresist pattern, an ion implantation process for implanting specific ions into a predetermined region of the substrate, a cleaning process for removing impurities on the substrate, and an inspection process for inspecting the surface of the substrate on which the film or pattern is formed. A substrate support unit for supporting a substrate may be formed inside the chamber of a substrate processing device that performs the above-mentioned processes. A substrate (W) may be placed on the upper surface of the substrate support unit, and a ring assembly may be formed along the circumference of the substrate support unit. Figure 1 is a drawing showing a conventional ring assembly. Referring to FIG. 1, the substrate support unit (200) may include an electrostatic chuck (220) comprising a puck (222) and a base plate (224), and a ring assembly (300) may be formed along the circumference of the substrate support unit (200). The ring assembly (300) may include a first ring (320), a second ring (340), a third ring (360), and a pad (380). The first ring (320) may be placed along the circumference of the puck (222), and the second ring (340) may be placed along the circumference of the base plate (224). The third ring (360) may be placed along the circumference of the first ring (320) and the second ring (340). A pad (380) may be formed between the base plate (224) and the first ring (320). The pad (380) may have a ring shape and may be provided using silicon as a material. Such a pad (380) may reduce the impedance between the edge region of the base plate (224) and the first ring (320), thereby reducing the potential difference and arcing phenomenon between the substrate (W) and the first ring (320). These pads (380) undergo discoloration and hardening due to acidic process gases during the process. As a result, the replacement time of the pads (380) is shortened, and the Mean Time Between Cleans (MTBC) of the substrate processing device is reduced, thereby reducing the productivity of the semiconductor device. Figure 1 is a drawing showing a conventional ring assembly. FIG. 2 is a drawing showing a substrate processing apparatus according to one embodiment of the present invention. FIG. 3 is an enlarged view of a ring assembly according to one embodiment of the present invention. FIG. 4 is a drawing showing a pad according to another embodiment of the present invention. FIG. 5 is a drawing showing a substrate processing apparatus according to another embodiment of the present invention. Hereinafter, embodiments of the present invention are described in detail with reference to the attached drawings so that a person skilled in the art can easily implement the present invention. However, the present invention may be embodied in various other forms and is not limited to the embodiments described herein. In describing embodiments of the present invention, if it is determined that a specific description of related known functions or configurations may unnecessarily obscure the essence of the present invention, such specific description is omitted, and parts having similar functions and operations are denoted by the same reference numerals throughout the drawings. At least some of the terms used in the specification are defined with consideration of their functions in the present invention and may vary depending on the user's or operator's intent, convention, etc. Therefore, such terms should be interpreted based on the content throughout the specification. Additionally, in this specification, the singular form includes the plural form unless specifically stated otherwise in the text. In this specification, when a component is described as including, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components. Meanwhile, the size, shape, and line thickness of components in the drawings may be depicted somewhat exaggerated for ease of understanding. Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings. In describing with reference to the attached drawings, identical or corresponding components are given the same reference number regardless of the drawing symbols, and redundant descriptions thereof