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KR-20260063436-A - SUBSTRATE PROCESSING APPARATUS

KR20260063436AKR 20260063436 AKR20260063436 AKR 20260063436AKR-20260063436-A

Abstract

A substrate processing device comprises a substrate boat configured to accommodate a plurality of substrates, wherein the substrate boat comprises vertically extended vertical portions, horizontal portions extending horizontally from each side of the vertical portions and vertically spaced apart from each other, and a support structure coupled to each of the horizontal portions and having a major axis and a minor axis, wherein the major axis of the support structure forms an acute angle with the upper surface of each of the horizontal portions.

Inventors

  • 김연태
  • 김이환
  • 박기수
  • 최원희

Assignees

  • 삼성전자주식회사

Dates

Publication Date
20260507
Application Date
20241030

Claims (10)

  1. It includes a substrate boat configured to accommodate multiple substrates, and The above-mentioned substrate boat is: Vertically extended vertical sections; Horizontal sections extending horizontally from each side of the above-mentioned vertical sections and vertically spaced apart from each other; and A substrate processing device comprising a support structure coupled to each of the above-mentioned horizontal parts and having a major axis and a minor axis, wherein the major axis of the support structure forms an acute angle with the upper surface of each of the above-mentioned horizontal parts.
  2. In Article 1, A substrate processing device in which the above acute angle is 25° to 65°.
  3. In Article 1, The above support structure is a substrate processing apparatus comprising glassy carbon, pyroritic boron nitride (PBN), cubic boron nitride (c-BN), carbon composite, microcrystalline diamond, or a combination thereof.
  4. In Article 1, The above support structure is a substrate processing device comprising a body portion and a coating portion provided on the surface of the body portion.
  5. In Article 5, The above body portion comprises quartz ( SiO2 ), silicon carbide (SiC), silicon nitride (SiN), aluminum oxide ( Al2O3 ), boron nitride, or a combination thereof, and The above coating portion is a substrate processing device (10) containing pyroritic graphite.
  6. In Article 1, A substrate processing apparatus comprising the above vertical parts and the above horizontal parts, wherein the vertical parts and the horizontal parts comprise quartz ( SiO2 ), silicon carbide (SiC), silicon nitride ( SiN ), aluminum oxide ( Al2O3 ), boron nitride, or a combination thereof.
  7. In Article 1, The above support structure is: A substrate processing device that is detachable from each of the above horizontal parts and is configured to support the edge portion of one side of the substrate.
  8. In Article 7, A substrate processing device having a portion of the support structure configured to support one surface of the substrate having a conical shape, a polygonal pyramidal shape, a cylindrical shape, or a rectangular parallelepiped shape.
  9. In Article 1, The above-mentioned substrate boat is: An upper plate covering the upper surfaces of the above vertical sections; and It further includes a support connected to the lower surfaces of the above-mentioned vertical parts, The above upper plate forms a semicircular shape from a planar perspective, and The above vertical sections are spaced apart from each other, and the substrate processing device is arranged along the curved portion of the upper plate in a planar view.
  10. In Article 1, A substrate processing device in which the above horizontal parts are integrally connected to the corresponding of the above vertical parts.

Description

Substrate Processing Apparatus This application relates to a substrate processing apparatus. Semiconductor devices can be manufactured using various semiconductor manufacturing processes. When the above semiconductor manufacturing processes are performed, a semiconductor substrate may be mounted on a support device. The support device safely supports and protects the semiconductor substrate and assists in ensuring that the process proceeds smoothly and uniformly. The support device may include, for example, a batch type that accommodates multiple substrates and a single type that accommodates a single substrate. A batch-type support device is a support device designed to process multiple semiconductor substrates simultaneously. The batch-type support device can be used in various semiconductor manufacturing processes. For example, the batch-type support device can be used in oxidation processes, diffusion processes, or heat treatment processes. The batch-type support device can mount semiconductor substrates in a vertical or horizontal direction. Meanwhile, when a semiconductor substrate is mounted on a support device, damage or cracks may occur on the semiconductor substrate due to physical and/or chemical stress. FIG. 1 is a cross-sectional view of a substrate processing apparatus according to one embodiment of the present application. FIG. 2 is a plan view of a substrate boat according to one embodiment of the present application. Figure 3 is an enlarged view of the X area of Figure 1. Figure 4 is an enlarged view corresponding to the X area of Figure 1. FIGS. 5a to 5f are cross-sectional views of a support structure according to one embodiment of the present application. Hereinafter, embodiments of the present application will be described in more detail with reference to the attached drawings. A substrate processing unit may be equipment that performs various processes necessary to manufacture high-performance semiconductor chips on a semiconductor substrate. The substrate processing unit may be, for example, a substrate bonding unit, a deposition unit, a cleaning unit, or a furnace unit. A substrate processing device according to one embodiment of the present application may be a batch-type furnace device designed to process a plurality of substrates at a high temperature. Here, the substrate may include a semiconductor substrate made of a semiconductor material, as well as an SOI (Silicon on Insulator) substrate, a metal substrate, a glass substrate, a plastic substrate, etc. The semiconductor substrate may be, for example, a silicon substrate, a germanium substrate, or a silicon-germanium substrate. The above furnace device may be a substrate support device designed to accommodate and process multiple semiconductor substrates simultaneously at high temperatures. FIG. 1 is a cross-sectional view of a substrate processing apparatus according to one embodiment of the present application. FIG. 2 is a plan view of a substrate boat according to one embodiment of the present application. FIG. 3 is an enlarged view showing the X-region of FIG. 1. Referring to FIG. 1, a substrate processing device (10) according to one embodiment of the present application may include an outer tube (110), an inner tube (130), a heating coil (150), a flange (170), a substrate boat (300), and a door plate (500). A substrate processing device (10) according to one embodiment of the present application may be a double tube type heat treatment furnace device comprising an outer tube (110) and an inner tube (130). The outer tube (110) may be located on the outer part of the substrate processing device (10). The outer tube (110) may form the outer shape of the substrate processing device (10). The outer tube (110) may be provided in a structure that surrounds the inner tube (130) and may be spaced apart from the inner tube (130) at a certain distance. When a heat treatment process is performed through the substrate processing device (10), the outer tube (110) can prevent heat from being released to the outside. More specifically, the outer tube (110) can improve the stability of the heat treatment by retaining heat. The outer tube (110) can physically separate the inner tube (130) and the process space (2h) defined by the inner tube (130) to protect the thermal reaction and/or chemical reaction from occurring safely. The side of the outer tube (110) may have a cylindrical shape, and the top may form an arch shape. In one embodiment, the outer tube (110) may have a bell shape with an open bottom and a closed top. However, the shape of the outer tube (110) is not limited to this, and the outer tube (110) may have various shapes. For example, the outer tube (110) may have a rectangular prism shape with an open bottom and a closed top, or a cylindrical shape. The outer tube (110) may be formed of a heat-resistant material. The outer tube (110) may include, for example, quartz ( SiO2 ), silicon carbide (SiC), silicon (Si), or a combinat