KR-20260063614-A - Structure of gate contact and method of manufacturing the same

KR20260063614AKR 20260063614 AKR20260063614 AKR 20260063614AKR-20260063614-A

Abstract

A gate contact structure and a method for manufacturing a gate contact structure are disclosed. The disclosed gate contact structure comprises: a gate electrode; an etch stop layer provided on the gate electrode; a capping layer provided on the etch stop layer; a contact hole provided on the etch stop layer and including a first portion in contact with the gate electrode and a second portion provided on the capping layer and communicating with the first portion; a liner provided within the contact hole; and a gate contact plug provided within the liner; wherein an air gap may be provided adjacent to the first portion of the contact hole.

Inventors

김덕환
김성민
김재명
김정걸
이용경

Assignees

삼성전자주식회사

Dates

Publication Date: 20260507
Application Date: 20241030

Claims (14)

Gate electrode; An etching stop layer provided on the gate electrode; A capping layer provided in the above-mentioned etching stop layer; A contact hole comprising a first portion provided in the etching stop layer and in contact with the gate electrode, and a second portion provided in the capping layer and communicating with the first portion; A liner provided within the above contact hole; and A gate contact plug provided within the above-mentioned liner; comprising, A gate contact structure having an air gap provided adjacent to a first part of the contact hole.
In paragraph 1, The above liner comprises a first extension portion provided on the gate electrode and a second extension portion connected to one end of the first extension portion and surrounding the air gap, forming a gate contact structure.
In paragraph 2, The second extension portion is a gate contact structure provided to be in contact with one surface of the capping layer.
In paragraph 2, The second extension portion is a gate contact structure provided to contact one surface of the capping layer and one surface of a gate cut perpendicular to one surface of the capping layer.
In paragraph 1, The above gate contact plug includes a barrier metal and a metal material, and A gate contact structure in which the barrier metal is provided on one surface of the gate electrode, and the air gap is provided on the barrier metal.
In paragraph 1, A gate contact structure comprising a capping layer including SiN, and an etching stop layer including at least one of SiO2 , SiOCN, SiON, SiOC, SiCN, and combinations thereof.
In paragraph 1, A gate contact structure in which the liner comprises SiN, and the etching stop layer comprises at least one of SiO2 , SiOCN, SiON, SiOC, SiCN, and combinations thereof.
Step of providing an etch stop layer on the gate electrode; A step of providing a capping layer on the above-mentioned etching stop layer; A step of etching the capping layer to form a first portion of the contact hole; A step of etching the above etching stop layer to form a second portion of the contact hole; A step of depositing a liner within the above contact hole; A step of forming an air gap adjacent to a first portion of the contact hole; and A method for manufacturing a gate contact structure, comprising the step of forming a gate contact plug within the contact hole where the liner is deposited.
In paragraph 8, The step of forming the air gap described above is, A step of etching the etch stop layer to form an opening that communicates with a first portion of the contact hole and contacts one surface of the gate electrode; and A method for manufacturing a gate contact structure, comprising the step of additionally depositing the liner on one surface of the gate electrode to seal the opening and form the air gap.
In paragraph 8, The step of forming the air gap described above is, A step of etching the etch stop layer to form an opening that communicates with a first portion of the contact hole and contacts one surface of the gate electrode and one surface of the capping layer; and A method for manufacturing a gate contact structure, comprising the step of additionally depositing the liner on one surface of the gate electrode to seal the opening and form the air gap.
In paragraph 8, The step of forming the air gap described above is, A step of etching the etch stop layer to form an opening that communicates with a first portion of the contact hole and contacts one surface of the gate electrode, one surface of the capping layer, and one surface of the gate cut perpendicular to one surface of the capping layer; and A method for manufacturing a gate contact structure, comprising the step of depositing a liner on one surface of the gate electrode to seal the opening and form the air gap.
In paragraph 8, The step of forming the air gap described above is, A step of etching the etch stop layer to form an opening that communicates with a first portion of the contact hole and contacts one surface of the gate electrode; and A method for manufacturing a gate contact structure, comprising the step of depositing a barrier metal on one surface of the gate electrode to seal the opening and form the air gap.
In paragraph 8, A method for manufacturing a gate contact structure, wherein the capping layer comprises SiN, and the etching stop layer comprises at least one of SiO2 , SiOCN, SiON, SiOC, SiCN, and combinations thereof.
In paragraph 8, A method for manufacturing a gate contact structure, wherein the liner comprises SiN, and the etching stop layer comprises at least one of SiO2 , SiOCN, SiON, SiOC, SiCN, and combinations thereof.

Description

Structure of gate contact and method of manufacturing the same The disclosed embodiments relate to a gate contact structure and a method for manufacturing the same, and more specifically, to a contact structure of a gate electrode and a gate contact plug and a method for manufacturing the same. In the electronics industry, there is a continuing demand for smaller and faster electronic devices capable of supporting numerous functions simultaneously. Consequently, the semiconductor industry continues the trend of manufacturing low-cost, high-performance, and low-power integrated circuits (ICs). To date, these goals have largely been achieved by reducing semiconductor IC dimensions (e.g., minimum feature size) to improve production efficiency and lower associated costs. However, this expansion has complicated the semiconductor manufacturing process. Therefore, to realize the continued advancement of semiconductor ICs and devices, similar advancements in semiconductor manufacturing processes and technologies are required. As IC devices continue to shrink, the dimensions of contact features, such as gate contact features and source/drain contact vias, become increasingly smaller, and parasitic capacitance occurs between the source/drain contact plug and the gate contact plug that is proportional to the dielectric constant of the capping layer. Therefore, there is a need for a gate contact structure and a method for manufacturing the same that can solve this problem and lower the contact resistance to enable low-power, high-speed operation of the device. FIG. 1 is a schematic diagram illustrating the overall configuration of a semiconductor structure (1) according to an exemplary embodiment. FIG. 2 is an on-gate cut cross-sectional view of a gate contact structure (100) according to one embodiment. FIGS. 3a to 10 are drawings illustrating a method for manufacturing the gate contact structure (100) of FIG. 2. FIG. 11 is an on-gate cut cross-sectional view of a gate contact structure (200) according to another exemplary embodiment. FIG. 12 is an on-gate cut cross-sectional view of a gate contact structure (300) according to another exemplary embodiment. FIG. 13 is an on-gate cut cross-sectional view of a gate contact structure (400) according to another exemplary embodiment. Hereinafter, an image sensor and an electronic device including a chromatic separation lens array will be described in detail with reference to the attached drawings. The embodiments described are merely illustrative, and various modifications are possible from these embodiments. In the following drawings, the same reference numerals refer to the same components, and the size of each component in the drawings may be exaggerated for clarity and convenience of explanation. In the following, expressions described as "upper" or "upper" may include not only objects located directly above/below/left/right in contact, but also objects located above/below/left/right without contact. Terms such as "first," "second," etc., may be used to describe various components, but are used solely for the purpose of distinguishing one component from another. These terms do not imply differences in the material or structure of the components. A singular expression includes a plural expression unless the context clearly indicates otherwise. Furthermore, when a part is said to "include" a certain component, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components. Additionally, terms such as "...part," "module," etc., as described in the specification refer to a unit that processes one or more functions or operations, and this may be implemented in hardware or software, or as a combination of hardware and software. The use of the term "for example" and similar descriptive terms may apply to both the singular and plural forms. Furthermore, the use of any exemplary terms (e.g., etc.) is merely intended to describe the technical concept in detail and, unless limited by the claims, the scope of the rights is not limited by such terms. FIG. 1 is a schematic diagram illustrating the overall configuration of a semiconductor structure (1) according to an exemplary embodiment. Referring to FIG. 1, the semiconductor structure (1) may include source/drain electrodes (S/D) and a gate contact plug (C). The source/drain electrodes (S/D) may be spaced apart from each other in the X direction. A source/drain region may be provided below the source/drain electrodes (S/D). A gate contact plug (C) may be provided between the source/drain electrodes (S/D). An air gap (1020) may be provided adjacent to one end and the other end in the Y direction of the gate contact plug (C). A channel may be provided between the source/drain region (R). Meanwhile, the source/drain electrodes (S/D) and the gate contact plug (C) may be provided in various layouts. For example, as shown in FIG. 1, one of the source/drain electrodes (S/D