KR-20260063957-A - A fluid treating method, and substrate processing method including the same

Abstract

The present invention may provide a fluid processing method. The fluid processing method of the present invention may include detecting a fluid supplied to a substrate processing device, detecting an inert fluid supplied to a vacuum pump, calculating the liquefaction temperature of the fluid, and controlling the temperature of a pipe based on the calculated liquefaction temperature of the fluid.

Inventors

• 송기택
• 박은희
• 이정국
• 이준현
• 윤상미
• 윤숙
• 이수민

Assignees

• 삼성전자주식회사

Dates

Publication Date

20260507

Application Date

20241031

Claims (10)

1. Detecting the fluid supplied to the substrate processing device; Detecting the inert fluid supplied to the vacuum pump; Calculating the liquefaction temperature of the above fluid; and A fluid treatment method comprising controlling the temperature of a pipe based on the calculated liquefaction temperature of the fluid.
2. In Article 1, A fluid processing method comprising using the partial pressure of the fluid to calculate the liquefaction temperature of the fluid.
3. In Article 1, A fluid treatment method comprising at least one selected from TMA (Trimethylamine), HfCl₄ , or TEOS (Tetraethyl Orthosilicate).
4. In Article 1, A fluid treatment method comprising controlling the temperature of the above pipe, wherein the temperature of the above pipe is formed higher than the liquefaction temperature of the above-calculated fluid.
5. In Article 1, A fluid processing method comprising controlling the temperature of the above pipe and sensing the temperature of the above pipe.
6. Processing a substrate using a fluid in a substrate processing device; and Including processing the above fluid, Processing the above fluid is: Detecting the fluid supplied to the substrate processing device; Detecting an inert fluid supplied to a vacuum pump connected to the above-mentioned substrate processing device; Calculating the liquefaction temperature of the above fluid; and A substrate processing method comprising controlling the temperature of the piping between the vacuum pump and the scrubber based on the calculated liquefaction temperature of the fluid.
7. In Article 6, A substrate processing method comprising calculating the liquefaction temperature of the above fluid and calculating the partial pressure of the fluid through the detected fluid and the inert fluid.
8. In Article 7, A substrate processing method in which the liquefaction temperature of the above fluid is calculated by substituting the calculated partial pressure of the above fluid into the Clausius-Clapeyron equation.
9. In Article 6, Processing the above substrate is: Preparing the substrate within the above-mentioned substrate processing device; Supplying the fluid into the above substrate processing device; and A substrate processing method comprising performing a semiconductor process using the above fluid.
10. In Article 9, The above semiconductor process is a substrate processing method including a chemical vapor deposition process and an atomic layer deposition process.

Description

A fluid treating method, and a substrate processing method including the same The present invention relates to a fluid treatment method and a substrate treatment method including the same, and more specifically, to a fluid treatment method that prevents the liquefaction of a fluid and a substrate treatment method using the same. The manufacturing of semiconductor devices can be carried out through various processes. For example, the manufacturing of semiconductor devices may proceed through photolithography, etching, and deposition processes on a substrate. After each process is completed, the gases or liquids used become contaminated and need to be safely disposed of. In this regard, a scrubber can be utilized. A scrubber is a device that treats contaminants such as volatile organic compounds, fumes, and mist, and is also referred to as a gas absorption tower. Scrubbers can perform various roles, including not only absorbing contaminated gases but also distillation, humidification, and the removal of dust and mist. FIG. 1 is a schematic diagram showing a substrate processing system according to embodiments of the present invention. FIGS. 2 to 4 are drawings showing a substrate processing apparatus according to embodiments of the present invention. FIG. 5 is a flowchart illustrating a substrate processing method according to embodiments of the present invention. Hereinafter, embodiments of the present invention will be described with reference to the attached drawings. Throughout the entire specification, the same reference numerals may refer to the same components. FIG. 1 is a schematic diagram showing a substrate processing system according to embodiments of the present invention. Referring to FIG. 1, a substrate processing system (1) may be provided. The substrate processing system (1) may include a substrate processing device (10), a vacuum pump (20), and a scrubber (30). Additionally, the substrate processing system (1) may further include a first fluid supply device (GS1), a second fluid supply device (GS2), and a control unit (40). A substrate processing device (10) performs a semiconductor process and can process a substrate using the semiconductor process. In this specification, the term "substrate" used may refer to a silicon (Si) wafer, but is not limited thereto. Various fluids for performing a semiconductor process may be used in the substrate processing device (10). In this specification, the fluid may include both gas and liquid. For example, the substrate processing device (10) may include a substrate etching device, a substrate deposition device, a substrate polishing device, a substrate exposure device, and a substrate cleaning device. The substrate processing device (10) will be described in detail in FIGS. 2 to 4. The first fluid supply device (GS1) may be connected to the substrate processing device (10). The first fluid supply device (GS1) may supply a fluid to the substrate processing device (10) for performing a semiconductor process. According to one embodiment, the first fluid supply device (GS1) may supply a precursor used in the semiconductor process to the substrate processing device (10). For example, the fluid may include at least one selected from TMA (Trimethylamine), HfCl4, or TEOS (Tetraethyl Orthosilicate), but is not limited thereto. Additionally, the first fluid supply device (GS1) can detect the flow rate of the fluid supplied to the substrate processing device (10) in real time. To this end, the first fluid supply device (GS1) may include a Mass Flow Controller (MFC). For example, the MFC can detect the flow rate of the precursor supplied to the substrate processing device (10). The MFC can transmit information regarding the fluid flow rate to the computation processing unit (41) of the control unit (40) described later. As a result, the user can know the flow rate of individual fluids supplied to the substrate processing device (10) and the total amount of fluid in real time. The MFC may include at least one of a Coriolis Mass Flow sensor, a Thermal Mass Flow sensor, and a Differential-Pressure Mass Flow sensor. According to one embodiment, the MFC of the present invention may be a Coriolis mass flow sensor. The Coriolis mass flow sensor can measure the phase shift that occurs when a fluid passes through a tube. The Coriolis mass flow sensor can obtain a linear output proportional to the flow through the phase shift. The Coriolis mass flow sensor can measure the mass flow of a fluid even without knowing information about the fluid. According to one embodiment, the MFC of the present invention may be a thermal mass flow sensor. The thermal mass flow sensor can measure temperature changes by introducing a constant amount of thermal energy into the fluid flow. The thermal mass flow sensor can measure the energy required to maintain a probe at a constant temperature. By utilizing this, the thermal mass flow sensor can measure the mass flow of the fluid. According to one