KR-20260063970-A - semiconductor device including resistance change layer and thermal confinement electrode layer

Abstract

A semiconductor device according to one aspect comprises a substrate, an electrode structure including an interlayer insulating layer and a transverse electrode layer disposed on top of the substrate and alternately disposed with each other, a resistance change layer disposed along the sidewall surface of a trench penetrating the electrode structure on top of the substrate, an oxygen vacancy reservoir layer disposed on the resistance change layer within the trench, a first thermal confinement electrode layer disposed on the oxygen vacancy reservoir layer, and a vertical electrode layer disposed on the first thermal confinement electrode layer.

Inventors

• 이상민

Assignees

• 에스케이하이닉스 주식회사

Dates

Publication Date

20260507

Application Date

20241031

Claims (20)

1. Substrate; An electrode structure comprising an interlayer insulating layer and a transverse electrode layer arranged alternately on the upper surface of the above substrate; A resistance change layer disposed along the sidewall of a trench penetrating the electrode structure on the upper surface of the substrate; An oxygen vacancy reservoir layer disposed on the resistance change layer within the trench; A first thermal confinement electrode layer disposed on the oxygen vacancy storage layer; and A vertical electrode layer disposed on the first thermal restraint electrode layer. Semiconductor device.
2. In Article 1, The first thermal restraint electrode layer above an electrically conductive material having a lower thermal conductivity than the above-mentioned longitudinal electrode layer Semiconductor device.
3. In Article 1, The first thermal restraint electrode layer above including metallic silicon nitride Semiconductor device.
4. In Paragraph 3, The above metal silicon nitride is Comprising at least one of tungsten silicon nitride, titanium silicon nitride, and aluminum silicon nitride Semiconductor device.
5. In Article 1, The first thermal confinement electrode layer comprises a carbon layer with an amorphous structure. Semiconductor device.
6. In Article 1, The first thermal restraint electrode layer has a thickness of 10 Å to 100 Å. Semiconductor device.
7. In Article 1, The first thermal restraint electrode layer above Arranged to cover the oxygen cavity storage layer along the side wall surface of the above trench Semiconductor device.
8. In Article 1, A second thermal confinement electrode layer disposed between the electrode structure and the resistance change layer along the side wall of the trench. Semiconductor device.
9. In Article 1, The above resistance change layer is configured to have a plurality of conductances, and The plurality of conductances are configured such that their magnitude changes substantially linearly according to the voltage applied to the resistance change layer. Semiconductor device.
10. In Article 1, The above resistance change layer Comprising at least one of hafnium oxide, zirconium oxide, hafnium-zirconium oxide, titanium oxide, and aluminum oxide Semiconductor device.
11. In Article 1, The above oxygen public storage layer Comprising at least one of tantalum, titanium, zirconium, vanadium, tungsten, and ruthenium Semiconductor device.
12. In Article 1, The above horizontal electrode layer extends in a direction parallel to the surface of the substrate, and The above longitudinal electrode layer extends in a direction perpendicular to the surface of the substrate. Semiconductor device.
13. First and second conduction lines positioned on different planes; and A device structure disposed in an area where a first conductive line and a second conductive line intersect, comprising: The above element structure is A resistance change layer, an oxygen vacancy storage layer, and a first thermal confinement electrode layer disposed between the first and second conduction lines. Semiconductor device.
14. In Article 13, The first thermal restraint electrode layer comprises an electrically conductive material having a thermal conductivity lower than that of the second conduction line. Semiconductor device.
15. In Article 13, The above element structure is A pillar structure electrically connected to the first and second conductive lines. Semiconductor device.
16. In Article 13, The resistance change layer, the oxygen vacancy storage layer, and the first thermal confinement electrode layer are sequentially arranged on the first conduction line. Semiconductor device.
17. In Article 16, The above element structure is A second thermal confinement electrode layer disposed between the first conduction line and the resistance change layer further comprising Semiconductor device.
18. In Article 16, The above element structure is A first electrode layer disposed between the first conduction line and the resistance change layer; and A second electrode layer disposed between the first thermal restraint electrode layer and the second conduction line further comprising Semiconductor device.
19. In Article 16, A selection element layer further comprising the first conduction line and the resistance change layer disposed between them Semiconductor device.
20. In Article 19, The above selection element layer Comprising any one of a Metal-Insulator Transition (MIT) device layer, a Mixed Ion-Electron Conducting (MIEC) device layer, an Ovonic Threshold Switching (OTS) device layer, and a Tunnel Insulation device layer Semiconductor device.

Description

Semiconductor device including resistance change layer and thermal confinement electrode layer The present disclosure relates to a semiconductor device having a resistance change layer, generally. Generally, a resistance-changing material may refer to a material whose electrical resistance changes when an external stimulus, such as heat, current, voltage, or light, is applied. The resistance-changing material can maintain its changed electrical resistance even after the external stimulus is removed. A product that utilizes the electrical characteristics of the aforementioned resistance-changing material for the storage of signal information is a resistance-changing memory device. The above resistance change memory device may be provided with a resistance change layer containing the resistance change material as an information storage layer. Various configurations of a resistance change memory device for reliably recording and storing externally applied signal information within the resistance change layer are being studied. FIG. 1 is a perspective view schematically showing a semiconductor device according to one embodiment of the present disclosure. FIG. 2 is a cross-sectional view of the semiconductor device of FIG. 1 taken along I-I'. Figure 3 is an enlarged view of the 'CR' area of Figure 2. FIG. 4 is a schematic diagram showing the flow of internal heat during operation of a semiconductor device according to one embodiment of the present disclosure. FIG. 5 is a cross-sectional view schematically illustrating a semiconductor device according to another embodiment of the present disclosure. FIG. 6 is a cross-sectional view of the semiconductor device of FIG. 5 taken by cutting along II-II'. FIG. 7 is a perspective view schematically showing a semiconductor device according to another embodiment of the present disclosure. FIGS. 8 to 11 are perspective views schematically illustrating the element structures of a semiconductor device according to various embodiments of the present disclosure. Hereinafter, embodiments of the present application will be described in more detail with reference to the attached drawings. In the drawings, the size of the components, such as their width or thickness, is shown somewhat enlarged to clearly represent the components of each device. When one element is described as being located above or below another element, this implies both that the one element is located directly above or below the other element and that an additional element may be interposed between them. In a plurality of drawings, the same reference numerals refer to substantially identical elements. Furthermore, singular expressions should be understood to include plural expressions unless the context clearly indicates otherwise, and terms such as 'include' or 'have' are intended to specify the existence of the described features, numbers, steps, actions, components, parts, or combinations thereof, and should not be understood as precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof. A semiconductor device according to one embodiment of the present disclosure may have a resistance change layer disposed between a pair of electrodes. The resistance change layer may sequentially store a plurality of conductances (or electrical resistances) that are distinct from one another. Additionally, the semiconductor device may include a thermal confinement electrode layer that mitigates the release of heat generated during device operation to the outside of the semiconductor device. The thermal confinement electrode layer may have a lower thermal conductivity than the adjacent electrode among the pair of electrodes, thereby helping to keep heat generated during the recording operation of the semiconductor device within the semiconductor device. In one embodiment, the operation of the semiconductor device may include a forming operation, a set operation, and a reset operation. The forming operation may refer to an operation of structurally and chemically activating a resistance-changing material within the resistance-changing layer so that the resistance-changing layer has resistance-switching characteristics. The forming operation may involve applying a forming voltage to the resistance-changing layer in an initial state to induce an initial resistance change in the resistance-changing layer. The set operation and the reset operation may refer to a recording operation of the semiconductor device performed after the forming operation. The set operation may refer to an operation of increasing the conductance of the resistance-changing layer (or decreasing the electrical resistance) by applying a set voltage between the pair of electrodes. The resistance-changing layer may maintain the increased conductance even after the set voltage is removed. Accordingly, the semiconductor device may store signal information corresponding to the increased co