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KR-20260063999-A - ELECTRONIC DEVICE INCLUDING RADIO FREQUENCY FRONT END DEVICE AND METHOD FOR OPERATING THEREOF

KR20260063999AKR 20260063999 AKR20260063999 AKR 20260063999AKR-20260063999-A

Abstract

According to one embodiment, a radio frequency front end (RFFE) device included in an electronic device in a communication system may include: a power amplifier; and at least one antenna connected to the power amplifier. The power amplifier may include: a drive stage composed of a first common source amplifier in differential mode; a main stage having a structure for stacking a first common gate amplifier to a second common source amplifier; and a stack stage including a second common gate amplifier stacked at the output stage of the power amplifier.

Inventors

  • 오한식
  • 박승원
  • 양성기
  • 이주석

Assignees

  • 삼성전자주식회사

Dates

Publication Date
20260507
Application Date
20241031

Claims (20)

  1. In a radio frequency front end (RFFE) device included in an electronic device in a communication system, power amplifier; and It includes at least one antenna connected to the power amplifier, The above power amplifier is: A drive stage composed of a first common source amplifier in differential mode; A main stage including a structure for stacking a first common gate amplifier to a second common source amplifier; and An RFFE device characterized by including a stack stage comprising a second common gate amplifier stacked at the output terminal of the above power amplifier.
  2. In paragraph 1, An RFFE device characterized by the above electronic device being implemented as a base station, UE (user equipment), or a communication device that supports beamforming.
  3. In paragraph 1, The second common gate amplifier is AC (Alternating Current) stacked at the output terminal of the power amplifier, and An RFFE device characterized by the above AC stack being a stacking method that separates DC (Direct current) voltage and stacks only AC voltage.
  4. In paragraph 1, the power amplifier is: A first transformer (TF1) for impedance matching of an intermediate stage between the above drive stage (Drive) and the above main stage (Main); and An RFFE device characterized by further including a second transformer (TF2) for impedance matching between the main stage and the stack stage.
  5. In paragraph 1, A switching circuit (RF switch) that can be connected to at least one antenna and connected to ground; and An RFFE device characterized by further including a low-noise amplifier connected to at least one antenna to receive a signal based on the operation of the switching circuit.
  6. In paragraph 5, The RFFE device is characterized by controlling the second common gate amplifier included in the stack stage to an ON state and connecting the switching circuit to ground to operate in Tx mode.
  7. In paragraph 5, The RFFE device is characterized by controlling the second common gate amplifier included in the stack stage to an off state and controlling the switching circuit to an off state to operate in Rx mode.
  8. In paragraph 1, An RFFE device characterized in that at least one of the main stage and the stack stage is configured as an N-stack structure (where N is an integer greater than or equal to 2).
  9. In paragraph 1, An RFFE device characterized by being included in a beamforming transceiver integrated circuit that supports multi-channel together with at least one RFFE device having the same structure as the RFFE device.
  10. In paragraph 1, An RFFE device characterized by having a plurality of transistors stacked in the main stage, a DC voltage divided and applied to each of the plurality of transistors, and a constant RF voltage swing amplified and applied to each stack.
  11. In electronic devices in communication systems, radio frequency integrated circuit (RFIC); and Includes an RFFE (radio frequency front end) device, The RFFE device comprises a power amplifier and at least one antenna connected to the power amplifier, and The above power amplifier is: A drive stage composed of a first common source amplifier in differential mode; A main stage including a structure for stacking a first common gate amplifier to a second common source amplifier; and An electronic device characterized by including a stack stage comprising a second common gate amplifier stacked at the output terminal of the above power amplifier.
  12. In Paragraph 11, The electronic device is characterized by being implemented as a base station, UE (user equipment), or a communication device that supports beamforming.
  13. In Paragraph 11, The second common gate amplifier is AC (Alternating Current) stacked at the output terminal of the power amplifier, and An electronic device characterized by the above AC stack being a stacking method that separates DC (Direct current) voltage and stacks only AC voltage.
  14. In Clause 11, the above power amplifier is: A first transformer (TF1) for impedance matching of an intermediate stage between the above drive stage (Drive) and the above main stage (Main); and An electronic device characterized by further including a second transformer (TF2) for impedance matching between the main stage and the stack stage.
  15. In Clause 11, the RFFE device is: A switching circuit (RF switch) that can be connected to at least one antenna and connected to ground; and An electronic device characterized by further including a low-noise amplifier connected to at least one antenna to receive a signal based on the operation of the switching circuit.
  16. In paragraph 15, The above RFFE device is an electronic device characterized by controlling the second common gate amplifier included in the stack stage to the ON state and connecting the switching circuit to the ground to operate in Tx mode.
  17. In paragraph 15, The above RFFE device is an electronic device characterized by controlling the second common gate amplifier included in the stack stage to an off state and controlling the switching circuit to an off state to operate in Rx mode.
  18. In Paragraph 11, An electronic device characterized in that at least one of the main stage and the stack stage is configured as an N-stack structure (where N is an integer greater than or equal to 2).
  19. In Clause 11, the electronic device is, An RFFE device characterized by including the above RFFE device and a beamforming transceiver integrated circuit that supports multi-channel through at least one RFFE device having the same structure as the above RFFE device.
  20. In Paragraph 11, An electronic device characterized by having a plurality of transistors stacked in the main stage, a DC voltage divided and applied to each of the plurality of transistors, and a constant RF voltage swing amplified and applied to each stack.

Description

Electronic device including a radio frequency front end device and method for operating thereof The present disclosure relates to an electronic device including a radio frequency front end (RFFE) device in a wireless communication system and a method of operating the same. With the recent advancement of mobile communication technology leading to the widespread use of mobile terminals offering various functions, efforts are being made to develop 5G communication systems to meet the increasing demand for wireless data traffic. To achieve high data transmission rates and provide faster data transmission speeds, 5G communication systems are being considered for implementation in higher frequency bands (e.g., 25–60 GHz band) in addition to the frequency bands used in 3G and LTE (long term evolution) communication systems. For example, to mitigate path loss and increase the transmission distance of radio waves in the mmWave band, beamforming, massive MIMO, full dimensional MIMO (FD-MIMO), array antenna, analog beamforming, and large-scale antenna technologies are being discussed in 5G communication systems. In order to transmit a signal from an electronic device to a communication network (e.g., a base station), data generated from a processor or communication processor within the electronic device may be processed through RFIC (radio frequency integrated circuit) and RFFE (radio frequency front end) circuits and then transmitted to the outside of the electronic device through at least one antenna. The information described above may be provided as related art for the purpose of aiding understanding of the present disclosure. No claim or determination is made as to whether any of the foregoing may be applied as prior art related to the present disclosure. In relation to the description of the drawings, the same or similar reference numerals may be used for identical or similar components. FIG. 1 is a block diagram of an electronic device in a network environment according to one embodiment of the present disclosure. FIG. 2a is an example of a block diagram of an electronic device for supporting legacy network communication and 5G network communication according to one embodiment of the present disclosure. FIG. 2b is another example of a block diagram of an electronic device for supporting legacy network communication and 5G network communication according to one embodiment of the present disclosure. FIG. 3a is a drawing for illustrating an example of an operation to perform communication of an electronic device according to one embodiment of the present disclosure. FIG. 3b is a drawing illustrating an example of an RFFE device for communication of an electronic device according to one embodiment of the present disclosure. FIGS. 4a and FIGS. 4b show examples of an RF front end (RFFE) according to one embodiment of the present disclosure. FIG. 5a illustrates a case where an RF front end (RFFE) according to one embodiment of the present disclosure operates in Tx mode. FIG. 5b illustrates a case where an RF front end (RFFE) according to one embodiment of the present disclosure operates in Rx mode. FIG. 6 shows an example of an RF front end (RFFE) using an AC stacked power amplifier according to one embodiment of the present disclosure. FIG. 7a illustrates a case where an RF front end (RFFE) according to one embodiment of the present disclosure operates in Tx mode. FIG. 7b illustrates the case where an RF front end (RFFE) according to one embodiment of the present disclosure operates in Rx mode. FIG. 8 shows a circuit of a power amplifier (PA) in which a common gate amplifier (CG amplifier) is AC stacked according to one embodiment of the present disclosure. FIG. 9 shows the voltage swing per node of the power amplifier of FIG. 8 according to one embodiment of the present disclosure. FIGS. 10a and FIGS. 10b are drawings for explaining the performance of an RF front-end (RFFE) including an AC stack structure according to one embodiment of the present disclosure. FIG. 11 illustrates an example of the structure of a multi-channel beamforming transceiver IC including an RF front-end (RFFE) structure according to one embodiment of the present disclosure. FIGS. 12a and FIGS. 12b show examples of an RF front-end (RFFE) including an N-stack structure according to one embodiment of the present disclosure. Hereinafter, embodiments of the present disclosure are described in detail with reference to the drawings so that those skilled in the art can easily practice them. However, the present disclosure may be embodied in various different forms and is not limited to the embodiments described herein. In relation to the description of the drawings, the same or similar reference numerals may be used for identical or similar components. Furthermore, in the drawings and related descriptions, descriptions of well-known functions and configurations may be omitted for clarity and brevity. The present disclosure describes embodiments using