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KR-20260064038-A - CHEMICAL-MECHANICAL POLISHING SLURRY COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR BY USING THE SAME

KR20260064038AKR 20260064038 AKR20260064038 AKR 20260064038AKR-20260064038-A

Abstract

The present invention provides cerium oxide particles for chemical mechanical polishing and a chemical mechanical polishing slurry composition containing the same. By combining the characteristic cerium oxide particles of the present invention with a stabilizer and controlling the conditions of the slurry, the present invention provides a chemical mechanical polishing slurry composition capable of further improving slurry stability while maintaining a high oxide film polishing speed, and a method for manufacturing a semiconductor device using the same.

Inventors

  • 김석주
  • 이정호

Assignees

  • 솔브레인 주식회사

Dates

Publication Date
20260507
Application Date
20241031

Claims (15)

  1. Cerium oxide particles; solvent; and Includes a polymer-based stabilizer; A chemical mechanical polishing slurry composition characterized by having an average light transmittance of 50% or more for wavelength light in the 450-800 nm range in an aqueous dispersion in which the content of the above-mentioned cerium oxide particles is adjusted to 1.0 wt%.
  2. In paragraph 1, The chemical mechanical polishing slurry composition is characterized by maintaining the dispersion of cerium oxide particles at a temperature of 25 to 50 ℃.
  3. In paragraph 1, The chemical mechanical polishing slurry composition is characterized by the absolute value of the degree of pH change of the slurry composition over two weeks at a temperature of 25 to 50 ℃ being 0.15 or less.
  4. In paragraph 1, A chemical mechanical polishing slurry composition characterized in that the content of the above-mentioned stabilizer is 0.001 to 1 weight% with respect to the total weight of the chemical mechanical polishing slurry composition.
  5. In paragraph 1, A chemical mechanical polishing slurry composition characterized in that the above-mentioned stabilizer is a compound containing a cationic polymer.
  6. In paragraph 1, A chemical mechanical polishing slurry composition characterized in that the above-mentioned stabilizer is polydiallyldimethylammonium chloride (Poly(DADMAC)), polydiethylenetriamine 2-(dimethylamino)ethyl methacrylate (Poly(DMAEM)), poly2-(dimethylamino)ethyl methacrylate (Poly(DMAEM)), polyacrylamide decamethylene diamine (Poly(Aam_DCDA)), poly(dimethylamine)-co-epichlorohydrin, poly(dimethylamine)-co-epichlorohydrin-co-ethylenediamine (Poly(dimethylamine-co-epichlorohydrin-Ethylenediamine)), or a combination thereof.
  7. In paragraph 1, A chemical mechanical polishing slurry composition characterized by containing 1 to 10 weight percent of the cerium oxide particles based on the total weight of the chemical mechanical polishing slurry composition.
  8. In paragraph 1, The above chemical mechanical polishing slurry composition further comprises a pH adjuster, and The above pH adjuster is one or more inorganic acids selected from the group consisting of sulfuric acid, hydrochloric acid, nitric acid, and phosphoric acid, and one or more organic acids selected from the group consisting of acetic acid, citric acid, glutaric acid, glutolic acid, formic acid, lactic acid, malic acid, malonic acid, maleic acid, oxalic acid, phthalic acid, succinic acid, and tartaric acid, One or more amino acids selected from the group consisting of lysine, glycine, alanine, arginine, valine, leucine, isoleucine, methionine, cysteine, proline, histidine, phenylalanine, serine, tricin, tyrosine, aspartic acid, tryptophan, and aminobutyric acid, A chemical mechanical polishing slurry composition characterized by being imidazole, alkyl amines, alcohol amines, quaternary amine hydroxides, ammonia, or a combination thereof.
  9. In paragraph 1, A chemical mechanical polishing slurry composition characterized by the pH of the above composition being 1 to 5.
  10. In paragraph 1, A chemical mechanical polishing slurry composition characterized by having a silicon oxide film polishing speed of 1,000 to 5,000 Å/min.
  11. In paragraph 1, A chemical mechanical polishing slurry composition characterized by the secondary particle size of the cerium oxide particles, measured by a dynamic light scattering particle size analyzer (DLS), being 1 to 20 nm.
  12. In paragraph 1, A chemical mechanical polishing slurry composition characterized by the primary particle size of the cerium oxide particles, measured by a transmission electron microscope (TEM), being 0.5 to 10 nm.
  13. In paragraph 1, A chemical mechanical polishing slurry composition characterized in that, when analyzed by X-ray photoelectron spectroscopy (XPS), the sum of the XPS peak areas representing Ce-O bond energy representing Ce3+ is 30% or more relative to the sum of the XPS peak areas representing Ce-O bond energy representing Ce3+ on the surface of the cerium oxide particles is 100%.
  14. In paragraph 1, A chemical mechanical polishing slurry composition characterized by the step of preparing the above cerium oxide particles by precipitating them at an acidic pH in a solution containing a raw material precursor to obtain a dispersion of particles.
  15. A method for manufacturing a semiconductor device comprising the step of polishing using a chemical mechanical polishing slurry composition according to claim 1.

Description

Chemical-Mechanical Polishing Slurry Composition and Method for Manufacturing Semiconductor Device Using the Same The present invention relates to a chemical mechanical polishing slurry composition comprising cerium oxide particles and a method for manufacturing a semiconductor device. More specifically, the invention relates to a chemical mechanical polishing slurry composition that increases the ratio of Ce3+ on the surface of cerium oxide obtained through a synthesis method different from that of conventional cerium oxide particles, thereby enabling a high oxide film removal rate at a low content despite the small particle size, and, in combination with this, further improves the stability of the slurry through appropriate additive components, and a method for manufacturing a semiconductor device using the same. As semiconductor devices become more diverse and highly integrated, finer pattern formation technologies are being used. Consequently, the surface structure of semiconductor devices is becoming more complex, and interlayer flatness in each process is playing a crucial role in improving the precision of photolithography. In the manufacturing of semiconductor devices, the chemical mechanical polishing (CMP) process is utilized as such a planarization technology. For example, it is widely used as a process for interlayer isolation (ILD) to remove excess insulating films deposited for interlayer insulation, as a process for planarizing insulating films for shallow trench isolation (STI) to insulate between chips, and as a process for forming metal conductive films such as wiring, contact plugs, and via contacts. In the CMP process, the polishing speed, the flatness of the polished surface, and the degree of scratch occurrence are important and are determined by CMP process conditions, the type of slurry, and the type of polishing pad. High-purity cerium oxide particles are used in the cerium oxide slurry. Recently, there has been a demand to achieve even greater miniaturization of wiring in semiconductor device manufacturing processes, and polishing scratches generated during polishing have become a problem. Conventional cerium oxide slurries use particles ranging in size from 30 nm to 200 nm. When polishing is performed, even if fine polishing scratches occur, it is not a problem as long as they are smaller than the conventional wiring width. However, this is becoming a problem at the current stage where continuous high-level wiring miniaturization is being achieved. In response to this problem, attempts have been made to reduce the average particle diameter of the cerium oxide particles. However, in the case of existing particles, reducing the average particle diameter results in a decrease in mechanical performance, which causes a problem of reduced polishing speed. Even if one attempts to control the polishing speed and polishing scratches by controlling the average particle diameter of cerium oxide particles in this way, it is very difficult to achieve the target level of polishing scratches while maintaining the polishing speed. In addition, conventional chemical mechanical polishing slurry compositions fail to provide an optimized average particle diameter while simultaneously optimizing the Ce3+ to Ce4+ ratio of cerium oxide particles. Therefore, there is a need for research on polishing slurries containing cerium oxide particles that increase the ratio of Ce3+ on the surface of cerium oxide, thereby exhibiting a high oxide film removal rate despite the small particle size. In addition, in a CMP process using a CMP slurry composition, the particle size, non-uniformity, and consequently the oxide film polishing rate and surface flatness within the slurry may vary depending on the temperature conditions of the slurry. Considering these factors, separate means may be required to control the temperature of the polishing process, which can make the process sensitive or energy inefficient. Therefore, there is a need for research to improve the stability of the slurry even with temperature variations. As described above, the inventors have developed 0-nanometer-class cerium oxide particles with a significantly improved oxide film polishing speed, obtained through precipitation in an acidic solution as described in Patent Document 1. These particles exhibited characteristics in which the secondary particle size was maintained finely within the slurry despite their small primary particle size, i.e., aggregation did not occur easily. For the active utilization of these particles in industrial processes, it is necessary to ensure slurry stability in which the characteristics of the particles described above are well maintained even when the particles are included in an amount of 1% or more of the total weight of the polishing slurry composition; however, at the time of the development of these particles, it was difficult to secure such stability. In addition, Patent Document 1 added a small amount of ad