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KR-20260064048-A - SUBSTRATE PLATING PROCESS AND SUBSTRATE

KR20260064048AKR 20260064048 AKR20260064048 AKR 20260064048AKR-20260064048-A

Abstract

A substrate plating process according to one embodiment of the present application comprises the steps of: preparing a substrate including a through hole; and forming a conductive bridge using a conductive paste inside the through hole, wherein the through hole cross-sectional blocking rate of the conductive bridge is 50% or more and 100% or less, and the through hole depth blocking rate of the conductive bridge is 5% or more and 95% or less, wherein the through hole cross-sectional blocking rate is the ratio of the area through which light cannot pass based on the cross-sectional area including the diameter of the through hole, and the through hole depth blocking rate is the ratio of the depth to which the conductive paste is applied based on the through hole depth.

Inventors

  • 유상문
  • 권오탁
  • 류상욱
  • 정대철
  • 최아남

Assignees

  • 주식회사 엘지화학

Dates

Publication Date
20260507
Application Date
20241031

Claims (10)

  1. Step of preparing a substrate including through holes; and A substrate plating process comprising the step of forming a conductive bridge using a conductive paste inside the through hole, The blocking rate of the through-hole cross-section of the above conductive bridge is 50% or more and 100% or less, and The penetration hole depth sealing rate of the above conductive bridge is 5% or more and 95% or less, and The above-mentioned through-hole cross-sectional blocking rate is the ratio of the area through which light cannot pass based on the cross-sectional area including the diameter of the through-hole, and A substrate plating process in which the above-mentioned through-hole depth blocking rate is the ratio of the depth to which the conductive paste is applied based on the above-mentioned through-hole depth.
  2. In claim 1, A substrate plating process in which the ratio of the diameter of the through hole to the depth of the through hole is 1:4 to 1:10.
  3. In claim 1, A substrate plating process in which the above conductive paste comprises conductive particles, a resin, and a solvent.
  4. In claim 1, A substrate plating process in which the above substrate is one of a glass substrate, a CCL (Copper Clad Laminate) substrate, and a silicon substrate.
  5. In claim 1, A substrate plating process comprising further including the step of forming a conductive thin film on the substrate prior to or after the step of forming the conductive bridge.
  6. In claim 5, A substrate plating process in which the thickness of the conductive thin film is 0.01 μm to 3 μm.
  7. In claim 1, The step of forming the conductive bridge is a substrate plating process that uses any one of the following methods: (1) a method of directly applying the conductive paste to the through hole; (2) a method of applying the conductive paste to a transfer substrate and then transferring it to the through hole; (3) a method of applying the conductive paste to a laminating substrate and then laminating it to the through hole; (4) a method of dispensing the conductive paste to the through hole using a dispensing device; and (5) a method of applying the conductive paste to the through hole and then applying it additionally by increasing or decreasing pressure.
  8. In claim 1, A substrate plating process further comprising the step of electroplating a substrate having a conductive bridge formed inside the through hole to fill the inside of the through hole.
  9. through hole; and A substrate comprising a conductive bridge inside the above-mentioned through hole, The blocking rate of the through-hole cross-section of the above conductive bridge is 50% or more and 100% or less, and The penetration hole depth sealing rate of the above conductive bridge is 5% or more and 95% or less, and The above-mentioned through-hole cross-sectional blocking rate is the ratio of the area through which light cannot pass based on the cross-sectional area including the diameter of the through-hole, and A substrate in which the through-hole depth blocking rate is the ratio of the depth to which the conductive paste is applied to the through-hole depth.
  10. In claim 9, A substrate in which the ratio of the diameter of the through hole to the thickness of the substrate is 1:4 to 1:10.

Description

Substrate Plating Process and Substrate This application relates to a substrate plating process and a substrate. For substrates containing through-holes, a higher level of technical expertise is required compared to standard substrates to ensure uniform plating even inside (the center) of the holes. In particular, when the aspect ratio of the through-holes is high, it is difficult to plate deep inside the holes. Specifically, while the through-hole entrance is plated relatively quickly, the interior of the through-hole is plated more slowly compared to the entrance, making it impossible to form a uniform plating layer on both the entrance and the interior of the hole. Accordingly, a method is mainly used to proceed with plating while suppressing the plating speed at the entrance of the through hole so that it proceeds similarly to the plating speed inside the through hole. For example, there is a problem of low productivity because it requires a long time to perform plating for an extended period with low current density, or to achieve similar plating speeds at the hole entrance and inside using pulsed and reverse pulsed currents. Therefore, research is needed to form a uniform plating layer while reducing plating time and increasing productivity for substrates containing through holes with a high aspect ratio. Figure 1 is a figure showing a plating process for a substrate including a conventional through hole. Figures 2 and 3 are figures illustrating the plating process of a substrate including a through hole according to the present invention. FIG. 4 is a diagram illustrating a method for measuring the blockage rate of a through hole cross-section according to the present invention. FIG. 5 is a figure showing the cross-section of the through hole of an embodiment and a comparative example according to the present invention. Figure 6 is a figure illustrating a cross-section perpendicular to the diameter of the through hole of a comparative example. The present application will be described in more detail below. When a part in this application is described as "comprising" a certain component, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components. In this application, "A to B" means "A or more and B or less". One embodiment of the present application provides a substrate plating process comprising the steps of: preparing a substrate including a through hole; and forming a conductive bridge using a conductive paste inside the through hole, wherein the through hole cross-sectional blocking rate of the conductive bridge is 50% or more and 100% or less, and the through hole depth blocking rate of the conductive bridge is 5% or more and 95% or less, wherein the through hole cross-sectional blocking rate is the ratio of the area through which light cannot pass based on the cross-sectional area including the diameter of the through hole, and the through hole depth blocking rate is the ratio of the depth to which the conductive paste is applied based on the through hole depth. As shown in Fig. 1, conventional through-hole plating processes are carried out for a long time at a low current density to suppress the relatively fast plating speed at the hole entrance, or by using pulse current and reverse pulse current (PPR) to make the plating speeds at the entrance and inside similar. Consequently, there is a problem of low productivity because a long time is required for through-hole plating. The substrate plating process of the present application has the effect of reducing the difficulty of electroplating by changing high aspect ratio through holes into low aspect ratio holes through pre-filling the center of the through holes with metal in a short time. In addition, since the area requiring plating is reduced by the amount of pre-filled portion, an increase in productivity can be expected. Specifically, for example, assuming other conditions are the same, if plating is performed without pre-filling, it takes 5 to 10 hours to fill the entire through hole with pulse plating or reverse pulse plating; whereas, as in the present invention, if DC plating is performed after pre-filling with a conductive paste, plating can be completed within 1 to 2 hours, thus having the effect of shortening production time (tack time). In the present application, the substrate is not limited to having through holes and being used as a printed circuit board in the art. In one embodiment of the present application, the substrate may be any one of a glass substrate, a CCL (Copper Clad Laminate) substrate, and a silicon substrate. In one embodiment of the present application, the substrate may be a glass substrate. In one embodiment of the present application, the thickness of the substrate may be 300 μm to 900 μm, and preferably 500 μm to 840 μm. In one embodiment of the present application, the shape of the through hole is not particularly limited as long as it is a