KR-20260064199-A - Piezoelectric force sensor on metallic wire using semiconductor nanorod array

Abstract

The present invention relates to a piezoelectric sensor comprising: a metal wire substrate; a piezoelectric material nanorod formed on the metal wire substrate; and a metal thin film deposited on the tip of the piezoelectric material nanorod. The piezoelectric sensor according to the present invention exhibits very high sensitivity and provides stable and accurate force measurement. Furthermore, when using a nanorod array, it has the advantage of improving the reliability of the sensor by ensuring excellent reproducibility of the measurement values. In addition, since it can be fabricated on flexible substrates such as metal wires or 2D material substrates, large-scale manufacturing is possible, making it useful for commercialization. Moreover, wider applications can be expected in next-generation electronics such as medical devices, wearables, and smart devices.

Inventors

• 이규철
• 유동하
• 알리 아사드

Assignees

• 서울대학교산학협력단

Dates

Publication Date

20260507

Application Date

20241031

Claims (19)

1. Metal wire substrate; Piezoelectric material nanorods formed on the metal wire substrate; and A piezoelectric sensor comprising a metal thin film deposited on the above-mentioned piezoelectric material nanorod.
2. In paragraph 1, A piezoelectric sensor in which the metal wire substrate is a wire substrate selected from the group consisting of Ti (titanium), Al (aluminum), Ta (tantalum), Ag (silver), Nb (niobium), Cu (copper), Rh (rhodium), Al (aluminum), Cr (chromium), Mo (molybdenum), V (vanadium), and W (tungsten).
3. In paragraph 1, A piezoelectric sensor in which the piezoelectric material is selected from the group consisting of zinc oxide (ZnO), zinc oxide / magnesium zinc oxide (ZnO/ZnMgO), gallium nitride (GaN), lead zirconate titanate ( PZT ; PbZrO3 ), barium titanate ( BaTiO3 ), aluminum nitride (AlN), bismuth titanate ( Bi4Ti3O12 ), silicon dioxide (Quartz; SiO2 ), lithium niobate ( LiNbO3 ), potassium sodium niobate (KNN), sodium bismuth titanate (NBT), bismuth ferrite (BFO), polyvinylidene fluoride (PVDF), polyvinylidene fluoride trifluoroethylene (P(VDF-TrFE)), and polyvinyl chloride (PVC).
4. In paragraph 1, A piezoelectric sensor in which the above-mentioned piezoelectric material is a zinc oxide/zinc oxide magnesium (ZnO/ZnMgO) coreshell structure.
5. In paragraph 1, A method for manufacturing a piezoelectric sensor, wherein the nanorods have a length of 100 nm to 100 μm and a thickness of 10 nm to 10 μm.
6. In paragraph 1, A piezoelectric sensor in which the above nanorods form a nanorod array.
7. In paragraph 1, The above piezoelectric sensor is a piezoelectric sensor comprising an insulating material between a metal electrode and a metal wire substrate.
8. In Paragraph 7, A piezoelectric sensor in which the insulating material is selected from the group consisting of polyimide (PI), spin-on glass (SOG), polymethyl methacrylate (PMMA), and polydimethylsiloxane (PDMS).
9. In paragraph 1, A piezoelectric sensor in which the metal thin film is selected from the group consisting of Au (gold), Pd (palladium), Pt (platinum), Ni (nickel), Ir (iridium), Be (beryllium), and Co (cobalt).
10. In paragraph 1, The piezoelectric sensor described above further comprises a graphene or h-BN (hexagonal boron nitride) layer between a nanorod and a metal wire substrate.
11. A catheter comprising a piezoelectric sensor according to any one of claims 1 to 10.
12. In Paragraph 11, The above catheter is a catheter that is integrated with a piezoelectric sensor and inserted into an artificial blood vessel.
13. In Paragraph 12, The above-mentioned piezoelectric sensor is a catheter that detects the force of contact while the catheter balloon is inflated.
14. (A) A step of synthesizing piezoelectric material nanorods on a metal wire substrate; and (B) a step of depositing a metal thin film on the nanorod; comprising a method for manufacturing a piezoelectric sensor.
15. In Paragraph 14, A method for manufacturing a piezoelectric sensor, wherein step (A) above is performed by a metalorganic chemical vapor deposition (MOCVD) method.
16. In Paragraph 14, A method for manufacturing a piezoelectric sensor in which the piezoelectric material is a zinc oxide/zinc oxide magnesium (ZnO/ZnMgO) coreshell structure.
17. In Paragraph 14, A method for manufacturing a piezoelectric sensor in which the above nanorods form a nanorod array.
18. A method for manufacturing a piezoelectric sensor according to claim 14, wherein step (B) is performed by a thermal evaporation process.
19. In Paragraph 14, Between steps (A) and (B) above (a) a step of filling an insulating material between the metal thin film and the metal wire substrate; and (b) a step of exposing the nanorod tip through oxygen-containing plasma etching; further comprising a method for manufacturing a piezoelectric sensor.

Description

Piezoelectric force sensor on metallic wire using semiconductor nanorod array The present invention relates to a piezoelectric sensor of a metal wire using semiconductor nanorods. Percutaneous Coronary Intervention (PCI) is a minimally invasive procedure used to treat heart disease, particularly coronary artery disease, to widen narrowed or blocked coronary arteries and improve blood flow. The procedure begins by inserting a catheter through a small incision in the femoral artery or the radial artery at the wrist. Contrast agent is then injected through the catheter to image the blood vessels, allowing for the precise identification of the narrowed area. If a narrowing is detected, the affected area is expanded using a balloon attached to the catheter. In many cases, a stent is inserted after the vessel has been expanded with the balloon to stabilize it and prevent it from narrowing again. This procedure is suitable for patients with cardiovascular diseases such as angina or myocardial infarction. PCI is less invasive than open-heart surgery, placing less physical burden on the patient and offering a shorter recovery period. It has the advantage of allowing for a quick return to daily life after typically one to two days of hospitalization. However, catheter-assisted PCI entails inherent risks, including thrombosis, perforation, and other lumen damage to the blood vessels. During catheter-based surgery, physicians rely solely on X-ray images for visual guidance to navigate the catheter through the blood vessels. Since X-ray images are typically black-and-white and may lack clarity to depict the condition of the catheter and blood vessels—especially when contrast is low—it was necessary to measure the pressure applied by the catheter to the affected area and perform the procedure accordingly. In particular, for catheters used in delicate areas such as blood vessels, failure to precisely measure the pressure applied by the catheter to the vessel has resulted in medical accidents caused by penetrating the vessel. Therefore, various types of sensors are being proposed to measure the pressure applied to the tip of a catheter. Currently, force sensors generally utilize electrical pressure-sensing elements in which the output current changes depending on the externally applied force. However, the force sensor using the aforementioned electrical pressure-sensing element has the problem that the change in output current is not significant when a minute external force is applied, and expensive equipment is required to precisely measure the change in current. Therefore, there is a need for an improved force sensor and a catheter utilizing it that can enhance the safety and accuracy of catheter insertion procedures. While conducting research to solve the above-mentioned problem, the applicant developed a piezoelectric sensor of a metal wire using semiconductor nanorods and a catheter using the same, thereby completing the present invention. Figure 1 is a schematic diagram showing the structure of a piezoelectric sensor according to the present invention. FIG. 2 is a schematic diagram showing the structure of a piezoelectric sensor including a nanorod array according to the present invention. FIG. 3 is a diagram schematically illustrating the principle of a piezoelectric sensor according to the present invention. Figure 4a shows the band edge diagram of the ZnMgO/Au interface under normal conditions. Figure 4b is a diagram showing the band edge diagram of a ZnMgO/Au interface to which an external force is applied. Figure 5 is a diagram showing the step-by-step manufacturing process of a piezoelectric sensor according to the present invention. Figure 6 is a figure showing a manufactured piezoelectric sensor. Figure 7a shows an SEM image of a ZnO/ZnMgO core-shell nanorod array formed on a Ti-wire. Figure 7b shows an EDS mapping image of the elements Zn, Mg, and O of a single ZnO/ZnMgO core-shell nanorod. Figure 7c shows the XRD patterns of ZnO nanorods and ZnO/ZnMgO core-shell heterostructures. Figure 7d shows the low-temperature photoluminescence spectrum of a ZnO/ZnMgO core-shell heterostructure on a Ti-wire. Figure 8 shows an SEM image of an Au-coated ZnO/ZnMgO nanorod array. Figure 9 is a digital photograph of a piezoelectric sensor that has been fabricated and is ready for measurement. FIG. 10 is a schematic diagram showing the electrical connection with the piezoelectric sensor according to the present invention. Figure 11 is a figure showing the IV response of a piezoelectric sensor under normal and static force conditions using a voice coil motor. Figure 12 is a figure showing the periodic force response of the sensor under a static force of 100 mN. Figure 13a is a figure showing the periodic force response of a piezoelectric sensor according to a force that changes over time. Figure 13b is a figure showing the ratio of current fluctuation indicated for a force applied to a piezoelectric sensor. Figure 14 is a fig