KR-20260064200-A - METHOD FOR MANUFACTURING Y2O3 PARTICLES FOR PLASMA SPRAY, Y2O3 PARTICLES MANUFACTURED THEREBY, AND Y2O3 PLASMA SPARY COATING METHOD USING THE SAME

Abstract

The present invention aims to provide a method for manufacturing micro-sized Y₂O₃ granules for plasma spray coating that can be produced by a simple process. The present invention provides a method for manufacturing micrometer-sized Y₂O₃ granules for plasma spray coating, comprising: a step of preparing Y(OH) ₃ by mixing an yttrium precursor and NH₄OH in water; a step of preparing a slurry by mixing only the prepared Y(OH) ₃ , distilled water, and a binder; a drying step of granulating the slurry by spray drying; and a sintering step of heat-treating the granulated slurry under conditions of 1400 to 1700°C and 10 minutes to 100 hours. Furthermore, the present invention provides a plasma spray coating method using Y₂O₃ granules .

Inventors

• 김재일
• 전세주

Assignees

• 와이엠씨 주식회사

Dates

Publication Date

20260507

Application Date

20241031

Claims (8)

1. A step of preparing Y(OH) 3 by mixing an yttrium precursor and NH4OH in water; A step of preparing a slurry by mixing only manufactured Y(OH) 3 , distilled water, and a binder; A drying step of granulating the above slurry by spray drying; and A method for manufacturing micrometer-sized Y₂O₃ granules for plasma spray coating, comprising: a sintering step of heat-treating the granulated slurry at 1400–1700°C and 10 minutes–100 hours .
2. In paragraph 1, A method for manufacturing micrometer - sized Y₂O₃ granules for plasma spray coating, wherein the above-mentioned slurry manufacturing step utilizes ball mill grinding and is performed at room temperature.
3. In paragraph 2, A method for manufacturing micrometer-sized Y₂O₃ granules for plasma spray coating , wherein the above slurry is composed of 5 to 70 wt% Y₂O₃ , 0.01 to 3.0 wt% binder, and the remainder being water, based on 100 wt% of the slurry.
4. In paragraph 1, A method for manufacturing micrometer-sized Y₂O₃ granules for plasma spray coating , wherein the binder is one or more of carboxymethylcellulose sodium salt, polyacrylic acid, and polyvinylpyrrolidone.
5. Step of preparing the substrate; A Y₂O₃ thermal spray coating method comprising the step of forming a coating film by plasma spray coating micrometer-sized Y₂O₃ granules for plasma spray coating, manufactured by the method of claim 1 , onto the substrate.
6. In paragraph 5, The above substrate is a substrate made of aluminum or aluminum trioxide ( Al₂O₃ ), and A Y₂O₃ thermal spray coating method, wherein the step of preparing the substrate includes the step of performing sandblasting on the substrate.
7. In paragraph 5, A Y₂O₃ thermal spray coating method in which the step of forming the coating film is performed using a carrier gas including argon and helium, under conditions of a discharge rate of 1 g/min to 500 g/min and a discharge pressure of 10 psi to 5000 psi .
8. In paragraph 5, Y₂O₃ thermal spray coating method, wherein the thickness of the coating film is in the range of 10 µm to 5000 µm.

Description

Method for manufacturing Y2O3 granular particles for plasma spray coating, Y2O3 particles for spray coating manufactured thereby, and Y2O3 plasma spray coating method using the same The present invention relates to a method for manufacturing Y₂O₃particles for plasma spray coating, Y₂O₃ particles for spray coating manufactured thereby , and a Y₂O₃ plasma spray coating method using the same. In semiconductor manufacturing processes, the plasma dry etching process is crucial for microfabrication to achieve high integration of circuits on substrates such as silicon wafers. In this environment, methods have been proposed to extend the lifespan of components by utilizing materials with excellent plasma resistance as chamber components and coating the surface of the components with such materials. Among these, the technology of imparting new functionality by forming a coating film on the surface of a substrate using various materials has been used in various fields for a long time. As one of these surface coating technologies, a thermal spray coating method is known, for example, in which a thermal spray coating film is formed by spraying thermal spray particles made of materials such as ceramics onto the surface of a substrate in a softened or molten state by combustion or electrical energy. Generally, this thermal spray coating is performed by heating and melting fine powders and spraying the molten powder toward the surface of the substrate to be coated. The principle is that as the sprayed molten powder rapidly cools, it solidifies and deposits onto the coating target surface primarily through physical and chemical bonding forces. Plasma spray coating, which melts the powders using a high-temperature plasma flame among the above-mentioned spray coatings, is essential for coating metals with high melting points such as tungsten or molybdenum, and ceramics with high melting points. Plasma spray coating is advantageous for producing high-performance materials that exhibit additional properties such as wear resistance, corrosion resistance, heat resistance, carbide resistance, oxidation resistance, insulation, friction resistance, heat dissipation, and radiation resistance while preserving the material properties of the base material. Compared to other coating methods such as Chemical Vapor Deposition (CVD) or Physical Vapor Deposition (PVD), which use vacuum equipment that is limited by space and takes time to secure a vacuum, it has the advantage of being able to coat a large area of an object in a short period of time. In addition, in the field of manufacturing semiconductor devices, micro-processing is generally performed on the surface of a semiconductor substrate using a dry etching process that utilizes plasma of halogen-based gases such as fluorine, chlorine, and bromine. Furthermore, after the dry etching process, the interior of the chamber (vacuum vessel) from which the semiconductor substrate was removed is cleaned using oxygen gas plasma. During this process, components inside the chamber are exposed to highly reactive halogen gas plasma or oxygen gas plasma and corrode. If the corroded (eroded) parts detach from the components in the form of particles, these particles can adhere to the semiconductor substrate and become foreign substances (hereinafter referred to as particles) that cause defects in the circuit. Therefore, in conventional semiconductor device manufacturing equipment, development has been made to form a thermal spray coating film of a ceramic having plasma resistance on components exposed to high-temperature plasma, such as halogen gas or oxygen gas, for the purpose of reducing the generation of particles. As mentioned above, in cases where high vacuum is used, such as in semiconductors, the method of forming a thermal spray coating film using thermal spray materials in the dry etching process is widely used, so there is a need for research on a method to manufacture thermal spray materials in large quantities at a low cost using a simpler method. [Prior Art Literature] Korean Registered Patent Publication No. 10-2529089 (Comico Patent) Figure 1 shows an SEM image of micro-sized Y₂O₃ particles produced by a method for producing micrometer-sized Y₂O₃ granule particles for plasma spray coating according to one embodiment of the present invention. FIG . 2 shows a surface SEM image of a thermal spray coating film prepared using micro-sized Y₂O₃ particles according to one embodiment of the present invention. FIG . 3 shows a side SEM image of a thermal spray coating film prepared using micro-sized Y₂O₃ particles according to one embodiment of the present invention. Figure 4 (A) shows a conventional method for manufacturing micro-sized Y₂O₃ particles , and (B) shows a method for manufacturing micro Y₂O₃ according to one embodiment of the present invention. FIG. 5 is a schematic diagram of a method for manufacturing Y₂O₃ particles according to one embodiment of the present invention, wherein Y