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KR-20260064319-A - Method for fabricationg substrate structure

KR20260064319AKR 20260064319 AKR20260064319 AKR 20260064319AKR-20260064319-A

Abstract

The technical concept of the present invention provides a method for manufacturing a substrate structure comprising: a step of preparing a first substrate including a first surface and a second surface facing each other, and including a device region and an edge region surrounding the device region; a step of forming a first passivation layer on the first surface of the first substrate; a step of forming a step on at least one upper surface of the first substrate and the first passivation layer such that the vertical levels of the upper surface of the first passivation layer in the device region and the edge region are different from each other; a step of bonding the first substrate and the second substrate; and a step of irradiating a laser beam onto the second surface of the first substrate to separate the edge region from the device region.

Inventors

  • 김태성
  • 피재현
  • 남재희
  • 이동엽
  • 이호진
  • 임동찬
  • 장주희
  • 황선관

Assignees

  • 삼성전자주식회사

Dates

Publication Date
20260507
Application Date
20241031

Claims (10)

  1. A step of preparing a first substrate comprising a first surface and a second surface facing each other, and comprising a device region and an edge region surrounding the device region; A step of forming a first passivation layer on the first surface of the first substrate; A step of forming a step on at least one of the upper surface of the first substrate and the first passivation layer such that the vertical levels of the upper surface of the first passivation layer in the device region and the edge region are different from each other; A step of bonding the first substrate and the second substrate; A method for manufacturing a substrate structure comprising the step of irradiating a laser beam onto a second surface of the first substrate to separate the edge region from the device region.
  2. In paragraph 1, A method for manufacturing a substrate structure characterized by the laser beam causing delamination in the vertical direction of the first substrate.
  3. In paragraph 1, A method for manufacturing a substrate structure characterized in that the vertical level of the upper surface of the first passivation layer in the above-mentioned device region is higher than the vertical level of the upper surface of the first passivation layer in the above-mentioned edge region.
  4. In paragraph 3, The step of forming the above step is, A method for manufacturing a substrate structure characterized by forming a first trench surrounding the device region on the edge region of the first substrate before forming the first passivation layer.
  5. In paragraph 3, The step of forming the above step is, A method for manufacturing a substrate structure characterized by performing photolithography to form a second trench surrounding the device region in the first passivation layer.
  6. In paragraph 1, The step of forming the above step is, A method for manufacturing a substrate structure characterized by forming the upper portion of the first passivation layer overlapping the edge region to protrude.
  7. In paragraph 6, Before bonding the first substrate and the second substrate, A method for manufacturing a substrate structure characterized in that the vertical level of the upper surface of the first passivation layer in the above-mentioned device region is lower than the vertical level of the upper surface of the first passivation layer in the above-mentioned edge region.
  8. In paragraph 1, A method for manufacturing a substrate structure characterized in that the width of the edge region is in the range of 0.5 mm to 5 mm.
  9. A step of preparing a first substrate comprising a first surface and a second surface facing each other, and comprising a device region and an edge region surrounding the device region; A step of forming a first trench surrounding the element region on the first surface of the first substrate; A step of forming a first conductive pattern and a first passivation layer surrounding the first conductive pattern on a first substrate having the first trench formed therein; A step of bonding the first substrate and the second substrate such that the first passivation layer and the second passivation layer of the second substrate are adjacent to each other; A method for manufacturing a substrate structure characterized by including the step of irradiating a laser beam onto a second surface of the first substrate to separate the edge region from the device region.
  10. A step of preparing a first substrate comprising a first surface and a second surface facing each other, and comprising a device region and an edge region surrounding the device region; A step of forming a first conductive pattern and a first passivation layer surrounding the first conductive pattern on a first substrate; A step of forming a step on the upper surface of the first passivation layer; A step of bonding the first substrate and the second substrate such that the first passivation layer and the second passivation layer of the second substrate are adjacent to each other; A method for manufacturing a substrate structure characterized by including the step of irradiating a laser beam onto a second surface of the first substrate to separate the edge region from the device region.

Description

Method for fabricating substrate structure The present invention relates to a method for manufacturing a substrate structure, and more specifically, to a method for trimming the edges of a substrate. Wafer trimming can be performed to protect the wafer during subsequent processes. Conventional trimming devices apply mechanical force during the process, and the physical stress applied to the wafer can lead to chipping, resulting in defects or byproducts on the wafer surface. Accordingly, research is being conducted on methods to effectively perform wafer trimming. FIGS. 1 and FIGS. 2 are intermediate cross-sectional views for explaining a method for manufacturing a substrate structure according to one embodiment of the technical concept of the present invention. FIGS. 3a and 3b are intermediate step plan views for explaining a method for manufacturing a substrate structure according to one embodiment of the technical concept of the present invention. FIG. 4 is an intermediate cross-sectional view for explaining a method for manufacturing a substrate structure according to one embodiment of the technical concept of the present invention. Figure 5 is an exemplary enlarged view of area A of Figure 4. FIG. 6 is a cross-sectional view of an intermediate step to explain a method for manufacturing a substrate structure according to one embodiment of the technical concept of the present invention. Figure 7 is an exemplary enlarged view of area B of Figure 6. FIG. 8 is a cross-sectional view of an intermediate step to explain a method for manufacturing a substrate structure according to one embodiment of the technical concept of the present invention. FIGS. 9 to 12 are intermediate cross-sectional views for explaining a method for manufacturing a substrate structure according to one embodiment of the technical concept of the present invention. FIGS. 13 and FIGS. 14 are intermediate cross-sectional views for explaining a method for manufacturing a substrate structure according to one embodiment of the technical concept of the present invention. Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Identical components in the drawings are denoted by the same reference numerals, and redundant descriptions thereof are omitted. In the following embodiments, terms such as first, second, etc. are used not in a limiting sense, but for the purpose of distinguishing one component from another component. In the following examples, singular expressions include plural expressions unless the context clearly indicates otherwise. A method for manufacturing a substrate structure according to various embodiments of the present invention prepares a first substrate including a first surface and a second surface facing each other, and including a device region and an edge region; forms a first passivation layer on the first surface of the first substrate; forms a step on at least one of the first substrate and the first passivation layer; bonds the first substrate and the second substrate; and irradiates a laser beam onto the second surface of the first substrate to separate the edge region from the device region. FIGS. 1 and FIGS. 2 are intermediate cross-sectional views for explaining a method for manufacturing a substrate structure according to one embodiment of the technical concept of the present invention. Referring to FIG. 1, a first substrate (101) may be prepared having a first surface (100a) and a second surface (100b) facing each other. The first substrate (101) may include a device region (CA) and an edge region (EA). In one embodiment, the first substrate (101) is a base substrate, and the device region (CA) may be an area where a plurality of device patterns are formed on the first substrate (101). That is, the device pattern may be formed on the first surface (100a) of the first substrate (101) in the device region (CA). Alternatively, the first substrate (101) may include a base substrate and a device pattern, and the device region (CA) may be an area where the device pattern is formed on the first substrate (101). The edge region (EA) may surround the device region (CA). The edge region (EA) may refer to the bevel edge of the wafer. In the present specification, "in the device region" is understood as "in the region overlapping in a vertical direction with the device region (CA) of the first substrate (101)," and "in the edge region" can be understood as "in the region overlapping in a vertical direction with the edge region (CA) of the first substrate (101)." The first base substrate (101) may be bulk silicon or SOI (silicon-on-insulator). The first base substrate (101) may each be a silicon substrate or may include other materials, such as silicon germanium, SGOI (silicon germanium on insulator), indium antimonide, lead telluride compound, indium arsenide, indium phosphide, gallium arsenide, or gallium antimonide, but is not limited thereto. Referring