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KR-20260064321-A - BONDING APPARATUS

KR20260064321AKR 20260064321 AKR20260064321 AKR 20260064321AKR-20260064321-A

Abstract

The technical concept of the present invention is to provide a bonding device comprising: a support unit that supports a first substrate; and a bonding unit that attaches a second substrate to be bonded to the first substrate, disposed on the support unit; wherein the bonding unit comprises a tip member facing the support unit; and a head member disposed on the tip member; wherein the tip member is detachably attached to the head member, and the tip member comprises a first region in which positive pressure is generated and a second region surrounding the first region in which negative pressure is generated, wherein a portion of the second substrate corresponding to the first region protrudes toward the second substrate by the positive pressure, and another portion corresponding to the second region is attached to the second region by the negative pressure, and wherein the first substrate and the second substrate are bonded as the bonding unit moves toward the support unit, with the protruding portion of the second substrate coming into contact with the first substrate.

Inventors

  • 이준규
  • 구동윤
  • 이민우
  • 안성민
  • 오승열
  • 이강산

Assignees

  • 삼성전자주식회사

Dates

Publication Date
20260507
Application Date
20241031

Claims (10)

  1. A support unit supporting a first substrate; and A bonding unit disposed on the support unit and attaching a second substrate bonded to the first substrate; comprising, The above bonding unit is, A tip member facing the above support unit; and A head member disposed on the tip member; comprising, The above tip member is, A first part having a first region where gas is ejected and a second region surrounding the first region where a vacuum is formed; and A second part extending toward the head member from the first part; comprising, A bonding device in which the cross-section of the first part is smaller in width than the cross-section of the second part.
  2. In paragraph 1, A portion of the second substrate corresponding to the first region protrudes toward the second substrate by the ejection of the gas, and another portion corresponding to the second region is attached to the second region by the vacuum. A bonding device in which the first substrate and the second substrate are bonded as the bonding unit moves toward the support unit, and the protruding part of the second substrate comes into contact with the first substrate.
  3. In paragraph 1, The above-mentioned first part is, At least one positive pressure hole formed in the first region above, where the gas is ejected to form positive pressure; A trench formed in the second region above; A plurality of negative pressure holes formed in the above trench, into which gas is sucked to form the vacuum; and A bonding device comprising: a plurality of protrusions formed between the above-mentioned negative pressure holes.
  4. In paragraph 3, A bonding device in which the depth of the trench is substantially the same as the height of the protrusion.
  5. In paragraph 3, The head member is a bonding device comprising a first channel connected to the positive pressure hole and a second channel connected to the negative pressure hole.
  6. A support unit supporting a first substrate; and A bonding unit disposed on the support unit and attaching a second substrate bonded to the first substrate; comprising, The above bonding unit is, A tip member facing the above support unit; and A head member disposed on the tip member; comprising, The tip member is detachable from the head member, and The tip member includes a first region where positive pressure is generated and a second region surrounding the first region that generates negative pressure, and A portion of the second substrate corresponding to the first region protrudes toward the second substrate by the positive pressure, and another portion corresponding to the second region is attached to the second region by the negative pressure. A bonding device in which the first substrate and the second substrate are bonded as the bonding unit moves toward the support unit, and the protruding part of the second substrate comes into contact with the first substrate.
  7. In paragraph 6, A bonding device in which the tip member is attached to the head member by negative pressure and detached from the head member when the negative pressure is released.
  8. In paragraph 6, The above tip member is, At least one positive pressure hole formed in the first region above, where the positive pressure is formed; A trench formed in the second region above; A plurality of negative pressure holes formed in the above trench and in which the negative pressure is formed; and A bonding device comprising: a plurality of protrusions formed between the above-mentioned negative pressure holes.
  9. A support unit that supports a first substrate; A bonding unit disposed on the support unit and attaching a second substrate bonded to the first substrate; An alignment unit for measuring the positions of the first substrate and the second substrate; and A pressure unit that provides gas and vacuum to the bonding unit; comprising, The above bonding unit is, A tip member having a first region where the gas is ejected to form positive pressure and a second region surrounding the first region where negative pressure is formed by the vacuum, and a second region extending from the first region and having a cross-section wider than the cross-section of the first region, wherein the first region and the second region face the support unit; and A head member to which the above tip member is replaceably attached; comprising, A portion of the second substrate corresponding to the first region protrudes toward the second substrate by the positive pressure, and another portion corresponding to the second region is attached to the second region by the negative pressure. A bonding device in which the first substrate and the second substrate are bonded as the bonding unit moves toward the support unit, and the protruding part of the second substrate comes into contact with the first substrate.
  10. In Paragraph 9, The above-mentioned first part is, At least one positive pressure hole formed in the first region above, where the positive pressure is formed; A trench formed in the second region above; A plurality of negative pressure holes formed in the above trench and in which the negative pressure is formed; and A plurality of protrusions formed between the above-mentioned negative pressure holes; comprising, A bonding device in which the depth of the trench is substantially the same as the height of the protrusion.

Description

Bonding apparatus The technical concept of the present invention relates to a bonding device, and more specifically, to a bonding device for bonding a semiconductor die to a semiconductor die, a semiconductor die to a wafer, or a wafer to a wafer. Semiconductor devices having a stacked structure of semiconductor chips can be advantageous for improving semiconductor chip mounting density, shortening the length of electrical connection paths between semiconductor chips, and high-speed signal processing. To manufacture semiconductor devices having a stacked structure of semiconductor chips, a conventional method involved stacking semiconductor chips by placing a film containing an adhesive component between them; however, recently, a direct bonding method that directly bonds semiconductor chips without a separate adhesive medium is being used. FIG. 1 is a schematic diagram showing a bonding device according to one embodiment of the present invention. FIG. 2 is a perspective view schematically showing the tip member of FIG. 1. Figure 3 is an enlarged perspective view of A in Figure 2. FIG. 4 is a cross-sectional view schematically showing the bonding member of FIG. 1. FIGS. 5 and FIGS. 6 are a perspective view and a plan view schematically illustrating a modified example of a tip member. FIG. 7 is a cross-sectional view to explain the process of moving the second substrate to the center of the bonding unit. FIGS. 8a and 8b are drawings illustrating the process of a bonding device according to an embodiment of the present invention bonding a first substrate and a second substrate. FIG. 9 is a flowchart for explaining a bonding method using a bonding device according to an embodiment of the present invention. Hereinafter, embodiments of the present invention may be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described below and may be embodied in various other forms. The following embodiments are provided to sufficiently convey the scope of the present invention to those skilled in the art, rather than to fully complete the present invention. FIG. 1 is a schematic diagram showing a bonding device according to one embodiment of the present invention. Referring to FIG. 1, a bonding device (100) according to one embodiment of the present invention may include a support unit (110), a bonding unit (120), an alignment unit (130), and a pressure unit (140). The support unit (110) can support the first substrate (S1). The support unit (110) may include a support plate having a flat upper surface and can fix the first substrate (S1) by vacuum suction. The support unit (110) may include, as an example, a vacuum chuck (112) that adsorbs a first substrate (S1), a rotary actuator (114) that rotates the first substrate (S1), and a support member (116) that supports the rotary actuator (114). The vacuum chuck (112) can serve to stably fix the first substrate (S1). A plurality of vacuum holes may be formed on the upper surface of the vacuum chuck (112). The vacuum holes may be connected to an internal vacuum line. When negative pressure is applied to the vacuum line through a vacuum pump (not shown), the first substrate (S1) can be firmly fixed to the upper surface of the vacuum chuck (112). The surface of the vacuum chuck (112) is precision machined to have high flatness, so that it can provide uniform adsorption force over the entire substrate. The rotary actuator (114) can perform the function of precisely rotating the first substrate (S1). The rotary actuator (114) can be implemented using a high-precision servo motor as an example, and the rotation angle can be precisely controlled through an encoder. The rotation axis of the rotary actuator (114) is designed to be exactly aligned with the center of the vacuum chuck (112), so that the eccentricity of the first substrate (S1) can be minimized during rotation. As an example, the resolution of the rotation angle is set to 0.001 degrees or less, so that precise position adjustment at the meter level is possible. The support member (116) can stably support the rotary actuator (114) and provide structural stability for the entire support unit (110). The support member (116) is made of a high-rigidity material (e.g., cast iron, aluminum alloy) and may have a damper (not shown) with a vibration absorption function built in. This effectively blocks vibrations transmitted from the outside, thereby preventing a decrease in precision that may occur during the bonding process. The support unit (110) may also include a tilting mechanism (not shown) capable of finely adjusting the horizontal level of the first substrate (S1). This tilting mechanism is implemented in a three-point support manner, and a piezo actuator is mounted at each point to enable precise height adjustment at the nanometer level. This allows for the optimization of the parallelism between the first substrate (S1) and the second substr