Search

KR-20260064413-A - ADHESIVE COMPOSITION FOR SEMICONDUCTOR FILM AND METHOD OF MANUFACTURING THE SAME

KR20260064413AKR 20260064413 AKR20260064413 AKR 20260064413AKR-20260064413-A

Abstract

The present invention provides a semiconductor adhesive composition and a method for manufacturing the same.

Inventors

  • 이지문
  • 장영훈
  • 조한빈
  • 도상길
  • 유경석
  • 이규완
  • 하태용
  • 송경미

Assignees

  • 율촌화학 주식회사

Dates

Publication Date
20260507
Application Date
20241209
Priority Date
20241030

Claims (13)

  1. An adhesive composition for semiconductor films comprising a constituent unit derived from an organopolysiloxane of the following chemical formula 1 and a constituent unit derived from a hydrogen siloxane copolymer of the following chemical formula 2. [Chemical Formula 1] Here, R1 and R8 are each independently selected from the group consisting of hydrogen, alkyl and alkenyl, R2 to R7 are either hydrogen or alkyl, and n1 is an integer from 5 to 200,000. [Chemical Formula 2] Here, at least one of the above R 9 to R 18 is hydrogen, and in R 9 to R 18 Except for the hydrogen portion, the remainders are each independently alkyl, and n2 is an integer from 1 to 200, and n3 is an integer from 1 to 100.
  2. In claim 1, The above adhesive composition for a semiconductor film is an adhesive composition for a semiconductor film having a viscosity of 18,500 PaS to 26,000 PaS at 25°C after curing to form an adhesive layer.
  3. In claim 1, The above adhesive composition for a semiconductor film is an adhesive composition for a semiconductor film having a viscosity of 28,000 PaS to 34,000 PaS at 100°C after curing to form an adhesive layer.
  4. In claim 1, The above adhesive composition for a semiconductor film is an adhesive composition for a semiconductor film having an adhesive strength of 0.8gf/25mm to 2.5gf/25mm after curing to form an adhesive layer.
  5. In claim 1, The above adhesive composition for a semiconductor film is an adhesive composition for a semiconductor film having a storage modulus of 0.095 MPa to 0.130 MPa at 25°C after curing to form an adhesive layer.
  6. In claim 1, The above adhesive composition for a semiconductor film is an adhesive composition for a semiconductor film having a storage modulus of 0.140 MPa to 0.170 MPa at 100°C after curing to form an adhesive layer.
  7. In claim 1, The above adhesive composition for semiconductor films is, A semiconductor film adhesive composition that satisfies the following conditions when a semiconductor film is manufactured by forming an adhesive layer with a thickness of 15 to 50 μm on a PET film with a thickness of 25 to 100 μm using the above semiconductor film adhesive composition. (1) The dielectric loss of the film is 0.007 to 0.05 under conditions of 25 ℃ and 10 GHz (2) Under conditions of 25 ℃ and 10 GHz, the dielectric constant of the film is 2.90 to 3.25
  8. In claim 1, An adhesive layer for a semiconductor film, wherein the molar ratio of the vinyl groups included in the organopolysiloxane of Chemical Formula 1 and the Si-H groups included in the hydrogen siloxane copolymer of Chemical Formula 2 is 1:1 to 3.
  9. An adhesive layer formed by curing the adhesive composition for a semiconductor film of claim 1.
  10. A step of mixing an organopolysiloxane of Formula 1 below or its derivative and a hydrogen siloxane copolymer of Formula 2 below or its derivative with a solvent, and A method for preparing an adhesive composition for a semiconductor film, comprising the step of preparing an adhesive composition by introducing a platinum-based catalyst. [Chemical Formula 1] Here, R1 and R8 are each independently selected from the group consisting of hydrogen, alkyl and alkenyl, R2 to R7 are either hydrogen or alkyl, and n1 is an integer from 5 to 200,000. [Chemical Formula 2] Here, at least one of the above R 9 to R 18 is hydrogen, and in R 9 to R 18 Except for the hydrogen portion, the remainders are each independently alkyl, and n2 is an integer from 1 to 200, and n3 is an integer from 1 to 100.
  11. In claim 10, A method for preparing a film adhesive composition in which the molar ratio of the vinyl groups included in the organopolysiloxane of Chemical Formula 1 and the Si-H groups included in the hydrogen siloxane copolymer of Chemical Formula 2 is 1:1 to 3.
  12. In claim 10, A method for preparing an adhesive composition for a semiconductor film, wherein the solvent comprises one or more selected from the group consisting of alcohol-based solvents, ketone-based solvents, and aromatic hydrocarbon-based solvents.
  13. In claim 10, In the method for manufacturing an adhesive layer for the semiconductor film above, Based on 10 to 50 parts by weight of the organopolysiloxane of Chemical Formula 1 above 0.5 to 10 parts by weight of the hydrogen siloxane copolymer of the above chemical formula 2, 50 to 100 parts by weight of the above solvent and A method for preparing an adhesive composition for a semiconductor film, prepared in an amount of 0.001 to 0.05 parts by weight of the above-mentioned platinum-based catalyst.

Description

Adhesive composition for semiconductor film and method of manufacturing the same The present invention relates to an adhesive composition for semiconductor films and a method for manufacturing the same. Recently, there has been an even greater demand for the thinning and miniaturization of semiconductor devices and their packages. Consequently, as semiconductor wafers become thinner, electrostatic chucks (ESCs) are utilized to effectively secure them. An electrostatic chuck is a device used to secure wafers in the semiconductor manufacturing process; it fixes the wafer using electrical force and, unlike conventional methods such as physical clamps or vacuum suction, minimizes damage caused by contact and provides uniform fixing force. In particular, wafer fixing technology utilizing electrostatic chucks is effective in minimizing physical damage and providing uniform fixing force. In such ESC systems, adhesive films are used to fix semiconductor wafers, serving to protect the wafer surface and prevent damage that may occur during the process. The adhesive film used in this process must generally be designed with a multilayer structure. Such films must minimize the occurrence of burrs or bubbles that may arise during the semiconductor process, and must be able to be cleanly removed without residue after the precision processing of the wafer is completed. Various studies are currently underway to maintain these functions while enabling the wafer to adhere to the electrostatic chuck and preventing wafer degradation caused by the voltage generated by the chuck. To this end, research on various adhesive compositions for semiconductor films is underway. Hereinafter, various embodiments of the present invention are described with reference to the accompanying drawings. The present invention is not limited to specific embodiments and should be understood to include various modifications, equivalents, and/or alternatives of the embodiments of the present invention. In relation to the description of the drawings, similar reference numerals may be used for similar components. In this document, expressions such as "have," "can have," "include," or "can include" refer to the existence of the relevant feature (e.g., numerical values, functions, actions, or components, etc.) and do not exclude the existence of additional features. In this document, expressions such as “A or B,” “at least one of A or/and B,” or “one or more of A or/and B” may include all possible combinations of items listed together. For example, “A or B,” “at least one of A and B,” or “at least one of A or B” may refer to cases including (1) at least one A, (2) at least one B, or (3) both at least one A and at least one B. As used in this document, the expression "configured to" may be replaced, depending on the context, with, for example, "suitable for," "having the capacity to," "designed to," "adapted to," "made to," or "capable of." The term "configured to" does not necessarily mean "specifically designed to." The terms used in this document are used merely to describe specific embodiments and are not intended to limit the scope of other embodiments. Singular expressions may include plural expressions unless the context clearly indicates otherwise. Terms used herein, including technical or scientific terms, may have the same meaning as generally understood by those skilled in the art described in this document. Terms used in this document that are defined in general dictionaries may be interpreted as having the same or similar meaning as they have in the context of the relevant technology, and are not to be interpreted in an ideal or overly formal sense unless explicitly defined in this document. In some cases, even terms defined in this document may not be interpreted to exclude the embodiments of this document. The embodiments disclosed in this document are presented for the purpose of explaining and understanding the disclosed technical content and are not intended to limit the scope of the invention. Accordingly, the scope of this document should be interpreted to include all modifications or various other embodiments based on the technical concept of the invention. Hereinafter, preferred embodiments of the present invention will be described in detail. Prior to this, terms and words used in this specification and claims should not be interpreted as being limited to their ordinary or dictionary meanings, and should be interpreted in a meaning and concept consistent with the technical spirit of the present invention, based on the principle that the inventor can appropriately define the concept of the terms to best describe his invention. Therefore, it should be understood that the configurations of the embodiments described in this specification are merely some of the most preferred embodiments of the present invention and do not represent all of the technical ideas of the present invention, and that various equivalents and modifications that can