KR-20260064496-A - SEMICONDUCTOR DEVICES WITH BONDING STRUCTURES AND METHODS FOR FORMING THE SAME

Abstract

The present disclosure relates to a method, device, system, and technique for managing a bonding structure of a semiconductor device. An exemplary semiconductor device comprises a first semiconductor structure, a bonding structure, and a second semiconductor structure stacked along a first direction. The first semiconductor structure is bonded to the second semiconductor structure through the bonding structure. The bonding structure comprises a first contact structure group, a second contact structure group, and a dielectric material surrounding the first contact structure group and the second contact structure group. The first contact structure of the first contact structure group is adjacent to the second contact structure of the second contact structure group along a second direction perpendicular to the first direction. The first contact structure comprises a first conductive material. The second contact structure comprises the first conductive material and an oxide.

Inventors

• 린 린
• 왕 차오
• 티안 펭

Assignees

• 양쯔 메모리 테크놀로지스 씨오., 엘티디.

Dates

Publication Date

20260507

Application Date

20250819

Priority Date

20241031

Claims (20)

1. As a semiconductor device, A first semiconductor structure, a bonding structure, and a second semiconductor structure stacked along a first direction, wherein The first semiconductor structure is bonded to the second semiconductor structure through the bonding structure, and The bonding structure comprises a first contact structure group, a second contact structure group, and a dielectric material surrounding the first contact structure group and the second contact structure group, and The first contact structure of the first contact structure group is adjacent to the second contact structure of the second contact structure group along a second direction perpendicular to the first direction, and The above-mentioned first contact structure includes a first conductive material, and The second contact structure comprises the first conductive material and an oxide. Semiconductor device.
2. In paragraph 1, The first conductive material is a first metal, the oxide is a metal oxide, the metal oxide is a compound of oxygen and an element of the second conductive material, and the second conductive material is a second metal. Semiconductor device.
3. In paragraph 1, The first contact structure comprises a first portion including the first conductive material, a second portion including the first conductive material, and a third portion including the first conductive material, wherein the third portion is located between the first portion and the second portion along the first direction, and the first conductive material of the third portion is re-solidified. Semiconductor device.
4. In paragraph 1, The bonding structure comprises a first dielectric layer in contact with the first semiconductor structure and a second dielectric layer in contact with the second semiconductor structure, wherein the first contact structure group and the second contact structure group extend into the first dielectric layer and the second dielectric layer along the first direction, and the first dielectric material of the first dielectric layer is bonded to the second dielectric material of the second dielectric layer. Semiconductor device.
5. In paragraph 1, The first semiconductor structure comprises a first interconnection layer, and the second semiconductor structure comprises a second interconnection layer, wherein the first interconnection layer is coupled to the second interconnection layer through the first contact structure group. Semiconductor device.
6. In paragraph 1, The first semiconductor structure comprises a memory cell array, and the second semiconductor structure comprises a peripheral circuit configured to control the memory cell array, wherein the memory cell array is coupled to the peripheral circuit through the first contact structure group. Semiconductor device.
7. In paragraph 1, The first semiconductor structure comprises a first array of dynamic random access memory (DRAM) cells, and the second semiconductor structure comprises a second array of DRAM cells, and at least one of the first array or the second array is coupled to the first contact structure group. Semiconductor device.
8. As a semiconductor device, A first semiconductor structure, a bonding structure, and a second semiconductor structure stacked along a first direction, wherein The first semiconductor structure is bonded to the second semiconductor structure through the bonding structure, and The bonding structure comprises a contact structure and a dielectric material that isolates the contact structure from each other, and Among the above contact structures, the first contact structure is conductive and comprises a first portion including a conductive material, a second portion including the conductive material, and a third portion located between the first portion and the second portion along the first direction and including the conductive material and an oxide. Semiconductor device.
9. In paragraph 8, The conductive material is a first metal, the oxide is a metal oxide, and the metal oxide is a compound of oxygen and a second metal element, Semiconductor device.
10. In paragraph 8, The bonding structure comprises a first dielectric layer in contact with the first semiconductor structure and a second dielectric layer in contact with the second semiconductor structure, wherein the contact structure extends into the first dielectric layer and the second dielectric layer along the first direction, and the first dielectric material of the first dielectric layer is bonded to the second dielectric material of the second dielectric layer. Semiconductor device.
11. In paragraph 8, The first semiconductor structure comprises a first interconnection layer, and the second semiconductor structure comprises a second interconnection layer, wherein the first interconnection layer is coupled to the second interconnection layer through the contact structure. Semiconductor device.
12. In paragraph 8, The first semiconductor structure comprises a memory cell array, and the second semiconductor structure comprises a peripheral circuit configured to control the memory cell array, wherein the memory cell array is coupled to the peripheral circuit through the contact structure. Semiconductor device.
13. In paragraph 8, The first semiconductor structure comprises a first array of dynamic random access memory (DRAM) cells, and the second semiconductor structure comprises a second array of DRAM cells, wherein at least one of the first array or the second array is coupled to the contact structure. Semiconductor device.
14. In paragraph 8, The semiconductor device comprises two lateral regions along a second direction perpendicular to the first direction and a central region between the two lateral regions, and the contact structure is located within the central region. Semiconductor device.
15. As a method, A step of forming a first semiconductor structure, and The step of forming a second semiconductor structure, and The method includes the step of forming a bonding structure between the first semiconductor structure and the second semiconductor structure along a first direction to bond the first semiconductor structure to the second semiconductor structure, wherein the step of forming the bonding structure comprises: The method includes the step of forming a first contact structure group and a second contact structure group of the bonding structure, The dielectric material of the bonding structure above surrounds the first contact structure group and the second contact structure group, and The first contact structure of the first contact structure group is adjacent to the second contact structure of the second contact structure group along a second direction perpendicular to the first direction, and The above-mentioned first contact structure includes a first conductive material, and The second contact structure comprises the first conductive material and the first oxide. method.
16. In paragraph 15, The step of forming the first contact structure group and the second contact structure group of the bonding structure is A step of forming a first bonding layer on a surface of the first semiconductor structure - the first bonding layer comprises the dielectric material, a first conductive pad group, and a first thermite structure group, and the first conductive pad group is bonded to a first interconnection layer of the first semiconductor structure - and, A step of forming a second bonding layer on a surface of the second semiconductor structure - wherein the second bonding layer comprises the dielectric material, a second conductive pad group, and a second thermite structure group, wherein the second conductive pad group is bonded to a second interconnection layer of the second semiconductor structure, the first conductive pad group is associated with the second conductive pad group along the first direction, and the first thermite structure group is associated with the second thermite structure group along the first direction - comprising method.
17. In Paragraph 16, The first conductive pad of the first conductive pad group is adjacent to the first thermite structure of the first thermite structure group, the first conductive pad comprises the first conductive material, and the first conductive pad and the first thermite structure are isolated by the dielectric material, and the second conductive pad of the second conductive pad group is adjacent to the second thermite structure of the second thermite structure group, the second conductive pad comprises the first conductive material, and the second conductive pad and the second thermite structure are isolated by the dielectric material. method.
18. In Paragraph 17, The first thermite structure comprises a second conductive material, the second thermite structure comprises a second oxide, the first conductive material comprises a first metal, the second conductive material comprises a second metal, and the second oxide comprises a compound of oxygen and an element of the first metal. method.
19. In Paragraph 18, The first thermite structure and the second thermite structure both comprise a plurality of layers of the second metal and the second oxide arranged alternately along the first direction, method.
20. In Paragraph 17, A step of aligning the first semiconductor structure with the second semiconductor structure - wherein the first conductive pad is aligned with the second conductive pad along the first direction, and the first thermite structure is aligned with the second thermite structure along the first direction - and, The step of stacking the first semiconductor structure on the second semiconductor structure so that the first conductive pad group comes into contact with the second conductive pad group and the first thermite structure group comes into contact with the second thermite structure group, and A step of triggering a chemical reaction between the first thermite structure group and the second thermite structure group—the heat generated by the chemical reaction melts the surface of the first conductive pad and the surface of the second conductive pad to bond the first conductive pad to the second conductive pad, the first contact structure is formed by the first conductive pad and the second conductive pad, and the second contact structure is formed by the chemical reaction between the first thermite structure and the second thermite structure. method.

Description

Semiconductor devices having bonding structures and methods for forming the same The present disclosure relates to a semiconductor device and a method for manufacturing the same. Semiconductor devices, such as memory devices, can have various structures to increase the density of memory cells and lines on a chip. For example, three-dimensional (3D) memory devices are attractive due to their ability to increase array density by stacking more layers within a similar footprint. 3D memory devices generally include a memory array of memory cells and peripheral circuitry that facilitates the operation of the memory array. The present disclosure describes a method, device, system, and technique for managing a bonding structure of a semiconductor device. One aspect of the present disclosure features a semiconductor device. The semiconductor device comprises a first semiconductor structure, a bonding structure, and a second semiconductor structure stacked along a first direction. The first semiconductor structure is bonded to the second semiconductor structure through the bonding structure. The bonding structure comprises a first contact structure group, a second contact structure group, and a dielectric material surrounding the first contact structure group and the second contact structure group. The first contact structure of the first contact structure group is adjacent to the second contact structure of the second contact structure group along a second direction perpendicular to the first direction. The first contact structure comprises a first conductive material. The second contact structure comprises the first conductive material and an oxide. In some embodiments, the first conductive material is a first metal, the oxide is a metal oxide, the metal oxide is a compound of oxygen and an element of the second conductive material, and the second conductive material is a second metal. In some embodiments, the first contact structure comprises a first portion comprising a first conductive material, a second portion comprising a first conductive material, and a third portion comprising a first conductive material. The third portion is located between the first portion and the second portion along the first direction. The first conductive material of the third portion is re-solidified. In some embodiments, the bonding structure includes a first dielectric layer in contact with a first semiconductor structure and a second dielectric layer in contact with a second semiconductor structure. A first contact structure group and a second contact structure group extend into the first dielectric layer and the second dielectric layer along a first direction. A first dielectric material of the first dielectric layer is bonded to a second dielectric material of the second dielectric layer. In some embodiments, the first semiconductor structure comprises a first interconnect layer, and the second semiconductor structure comprises a second interconnect layer, and the first interconnect layer is coupled to the second interconnect layer through a first contact structure group. In some embodiments, the first semiconductor structure includes a memory cell array, and the second semiconductor structure includes a peripheral circuit configured to control the memory cell array. The memory cell array is coupled to the peripheral circuit through a first contact structure group. In some embodiments, the first semiconductor structure comprises a first array of dynamic random access memory (DRAM) cells, and the second semiconductor structure comprises a second array of DRAM cells, and at least one of the first array or the second array is coupled to a first contact structure group. Another aspect of the present disclosure features a semiconductor device. The semiconductor device comprises a first semiconductor structure, a bonding structure, and a second semiconductor structure stacked along a first direction. The first semiconductor structure is bonded to the second semiconductor structure through the bonding structure. The bonding structure comprises a contact structure and a dielectric material that isolates the contact structures from each other. Among the contact structures, the first contact structure is conductive and comprises a first portion comprising a conductive material, a second portion comprising a conductive material, and a third portion located between the first portion and the second portion along the first direction and comprising a conductive material and an oxide. In some embodiments, the conductive material is a first metal, the oxide is a metal oxide, and the metal oxide is a compound of oxygen and the element of a second metal. In some embodiments, the bonding structure includes a first dielectric layer in contact with a first semiconductor structure and a second dielectric layer in contact with a second semiconductor structure. The contact structure extends into the first dielectric layer and the second dielectric laye