KR-20260064517-A - Chemical vapor deposition apparatus

KR20260064517AKR 20260064517 AKR20260064517 AKR 20260064517AKR-20260064517-A

Abstract

The present invention relates to a chemical vapor deposition apparatus, and more specifically, to a chemical vapor deposition apparatus capable of maintaining a uniform thickness of a thin film by controlling the growth rate of the thin film at the center and edge of the substrate when a process gas is supplied toward a rotating substrate.

Inventors

장현철
서민호
조광일
이승구

Assignees

주식회사 테스

Dates

Publication Date: 20260507
Application Date: 20251001
Priority Date: 20241031

Claims (12)

Chamber; A susceptor provided inside the chamber, on which the substrate is placed and which heats the substrate; An upper cover provided on the inner side of the chamber and on the upper side of the susceptor, providing a processing space between the susceptor and the upper cover for processing the substrate; and A guide plate assembly for supplying process gas toward the processing space of the chamber; is provided, A chemical vapor deposition apparatus characterized in that the guide plate assembly comprises a plurality of guide plates arranged along a vertical direction, the process gas is supplied through a supply space between the plurality of guide plates, and at least one of the plurality of supply spaces includes one or more vertical partitions so that the supply space is partitioned along a horizontal direction.
In paragraph 1, A chemical vapor deposition apparatus characterized by the above supply space being composed of a first space located at the top and supplying a first carrier gas, a second space located below the first space and supplying a process gas, and a third space located at the bottom and supplying a second carrier gas.
In paragraph 2, A chemical vapor deposition apparatus characterized in that the vertical partition is provided in the second space and the third space, and divides the second space and the third space into a plurality of spaces.
In paragraph 3, The second space is divided into a second central space and a pair of second side spaces arranged on both sides of the second central space, and A chemical vapor deposition apparatus characterized in that the above-mentioned third space is divided into a third central space and a pair of third side spaces arranged on both sides of the above-mentioned third central space.
In paragraph 4, A chemical vapor deposition apparatus characterized in that the second central space is equal to the diameter of the substrate.
In paragraph 4, A chemical vapor deposition apparatus characterized in that the width of the second central space is greater than the width of the second side space, and the width of the third central space is greater than the width of the third side space.
In paragraph 3, A chemical vapor deposition apparatus characterized by the fact that the flow rate, flow velocity, or concentration of the gas supplied to the plurality of divided spaces is individually controlled.
In paragraph 1, A chemical vapor deposition apparatus characterized in that at least one of the plurality of guide plates is positioned inclined toward the substrate.
In paragraph 8, Among the plurality of guide plates mentioned above A chemical vapor deposition apparatus characterized by the fact that the angle of inclination of the top plate positioned at the top is the largest, and the angle of inclination of the guide plate decreases as it goes down.
External chamber; An inner chamber provided on the inner side of the above outer chamber; A susceptor provided on the inner side of the above inner chamber, on which the substrate is placed and which heats the substrate; An upper cover provided on the inner side of the inner chamber and on the upper side of the susceptor, providing a processing space between the susceptor and the upper cover for processing the substrate; and A guide plate assembly for supplying process gas toward the processing space of the inner chamber; is provided, A chemical vapor deposition apparatus characterized in that the guide plate assembly comprises a plurality of guide plates arranged along a vertical direction, the process gas is supplied through a supply space between the plurality of guide plates, and at least one of the plurality of supply spaces includes one or more vertical partitions so that the supply space is partitioned along a horizontal direction.
In Paragraph 10, A chemical vapor deposition apparatus characterized by the above supply space being composed of a first space located at the top and supplying a first carrier gas, a second space located below the first space and supplying a process gas, and a third space located at the bottom and supplying a second carrier gas.
In Paragraph 11, A chemical vapor deposition apparatus characterized in that the vertical partition is provided in the second space and the third space, and divides the second space and the third space into a plurality of spaces.

Description

Chemical vapor deposition apparatus The present invention relates to a chemical vapor deposition apparatus, and more specifically, to a chemical vapor deposition apparatus capable of maintaining a uniform thickness of a thin film by controlling the growth rate of the thin film at the center and edge of the substrate when a horizontal process gas is supplied toward a rotating substrate. Generally, a chemical vapor deposition apparatus divides a processing space for a substrate inside a chamber, and various processes are carried out on the substrate in said processing space. For example, a process gas or the like can be supplied from the side of the processing space by a gas supply unit to induce a laminar flow of gas along the horizontal direction inside the processing space, thereby allowing a thin film to be grown on the upper surface of a rotating substrate. In this case, when process gas is supplied horizontally toward the substrate, it is necessary to control the growth rate of the thin film growing on the center and edges of the substrate, and furthermore, it is necessary to maintain the thickness of the thin film on the substrate uniformly. FIG. 1 is a side cross-sectional view illustrating the internal configuration of a chemical vapor deposition apparatus according to one embodiment of the present invention, FIG. 2 is a front view of the guide plate assembly viewed from the inner chamber side. FIG. 3 is a plan view illustrating a guide plate assembly and a substrate on a susceptor. Hereinafter, the structure of a chemical vapor deposition apparatus according to an embodiment of the present invention will be examined in detail with reference to the drawings. FIG. 1 is a side cross-sectional view illustrating the internal configuration of a chemical vapor deposition apparatus (1000) according to one embodiment of the present invention. Referring to FIG. 1, the chemical vapor deposition apparatus (1000) may be provided with an inner chamber (300) (hereinafter referred to as 'chamber (300)'), a susceptor (320) provided inside the chamber (300) on which the substrate (W) is placed and which heats the substrate (W), an upper cover (310) provided inside the chamber (300) and above the susceptor (320) to provide a processing space (312) in which the substrate (W) is processed between the susceptor (320) and the upper cover (310), and a guide plate assembly (220) that supplies process gas toward the processing space (312) of the chamber (300). The chemical vapor deposition apparatus (1000) may be equipped with an external chamber (100). Various components may be provided in the external chamber (100). A receiving space (110) is provided on the inner side of the outer chamber (100), and the chamber (300) may be provided in the receiving space (110). A gas supply unit (200) may be connected to one side of the above-mentioned external chamber (100). The gas supply unit (200) may serve to supply various process gases and purge gases toward the processing space (312). The above gas supply unit (200) can supply various process gases, including precursor gas and dopant gas, and/or carrier gas, etc., toward the processing space (312) of the above-described chamber (300). For example, a chemical vapor deposition apparatus (1000) according to one embodiment of the present invention may be configured as an apparatus for epitaxial growth of silicon carbide (SiC) to manufacture a power semiconductor, and in this case, the precursor gas may be a Si-based gas such as dichlorosilane ( SiH₂Cl₂ ), monosilane ( SiH₄ ), trichlorosilane ( SiHCl₃ ), or silicon tetrachloride ( SiCl₄ ), and propane (C₃H₅ ) , methane ( CH₄ ), ethylene ( C₂H₄ ), or acetylene ( C₂H₂ ). In addition, nitrogen ( N₂ ) or ammonia ( NH₃ ) may be used as the dopant gas, and hydrogen ( H₂ ) may be used as the carrier gas. Meanwhile, the gas supply unit (200) may be equipped with a plurality of supply ports (212) connected to an external gas supply source (not shown) and a guide plate assembly (220) that supplies gas supplied through the supply ports (212) to the processing space (312). The supply port (212) can be connected to a gas box (210) provided in the outer chamber (100). The gas box (210) can be connected to the guide plate assembly (220). The guide plate assembly (220) comprises a plurality of guide plates (222A, 222B, 222C, 222D) spaced apart along the vertical direction, and process gas, etc. can be supplied through supply spaces (252, 254, 256) (see FIG. 2) between the plurality of guide plates (222A, 222B, 222C, 222D). Additionally, at least one of the plurality of supply spaces (252, 254, 256) may include one or more vertical partitions (232, 234, 242, 244) so that the supply spaces (252, 254, 256) may be partitioned along the horizontal direction. This will be examined in detail later. For reference, the vertical bulkheads (232, 234, 242, 244) may be configured to extend from the front end to the rear end along the longitudinal direction of the