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KR-20260064519-A - Hydride, method for producing the same, and method for manipulating a single carrier using the hydride

KR20260064519AKR 20260064519 AKR20260064519 AKR 20260064519AKR-20260064519-A

Abstract

A method for manufacturing a hydride according to the present invention comprises the steps of preparing an electronic compound in the form of a single crystal flake, and manufacturing the hydride by hydrogenating the electronic compound in a mixed gas atmosphere containing hydrogen. The hydrogenation process of the above electronic cargo may include replacing electrons placed in the electronic cargo with hydrogen ions ( H- ).

Inventors

  • 김성웅
  • 임동철

Assignees

  • 성균관대학교산학협력단

Dates

Publication Date
20260507
Application Date
20251013
Priority Date
20241031

Claims (16)

  1. A step of preparing an electronic material in the form of a single crystal flake represented by any one of the following [Chemical Formula 1], [Chemical Formula 2], or [Chemical Formula 3]; and The method includes the step of producing a hydride by hydrogenating the electronic product in a mixed gas atmosphere containing hydrogen, wherein A method for producing a hydride comprising, in the hydrogenation process of the above electronic cargo, replacing electrons placed in the electronic cargo with hydrogen ions ( H- ). [Chemical Formula 1] X 2 C (X = any one of Sc, Y, La, Ce, Eu, Gd, Tb, Ty, Ho, or Er) [Chemical Formula 2] Y 2 N (Y = any one of Ca, Sr, or Ba) [Chemical Formula 3] Z 2 W (Z = any one of Ti, Zr, or Hf, W = any one of O, S, or Se)
  2. In Article 1, A method for producing a hydride comprising, in the hydrogenation process of the above electronic cargo, hydrogenating the electronic cargo such that the hydride is represented by the following chemical formula 4. [Chemical Formula 4] Gd 2 CH x (2<x<3)
  3. In Article 2, The above electronic cargo comprises electrons ( 2e- ) existing in tetrahedral and octahedral positions between [ Gd₂C ] ²⁺ layers, belonging to the R-3m space group, and A method for producing a hydride comprising, in the hydrogenation process of the above electronic compound, replacing electrons at the tetrahedral and octahedral positions of the above electronic compound with hydrogen ions ( H- ), thereby converting the R-3m space group of the above electronic compound into the P-3m1 space group and the P-31m space group.
  4. In Article 1, A method for producing a hydride, comprising, in the hydrogenation process of the electronic cargo, heat treating the electronic cargo under atmospheric pressure conditions in the mixed gas atmosphere.
  5. In Paragraph 4, The above mixed gas further contains argon, and The above mixed gas comprises the argon having a larger volume ratio than hydrogen, and A method for producing a hydride comprising the volume ratio of the argon gas to the hydrogen being 96:4.
  6. In a hydride represented by any one of the following [Chemical Formula 5], [Chemical Formula 6], or [Chemical Formula 7], The above hydride has a layered crystal structure and includes hydrogen ions ( H- ) inserted between any one of the X2C layer, Y2N layer, or Z2W layer, and A hydride comprising, when viewed from the [001] direction, one of the ions of X, Y, or Z arranged in a triangular lattice structure, and hydrogen ions ( H- ) arranged thereon in a triangular lattice structure. [Chemical Formula 5] X 2 CH x (X = any one of Sc, Y, La, Ce, Eu, Gd, Tb, Dy, Ho, or Er, 0<x<3.5) [Chemical Formula 6] Y 2 NH x (Y = any one of Ca, Sr, or Ba, 0<x<3.5) [Chemical Formula 7] Z 2 WH x (Z = any one of Ti, Zr, or Hf, W = any one of O, S, or Se, 0<x<3.5)
  7. In a hydride comprising gadolinium (Gd), carbon (C) and hydrogen (H) and represented by the following [Chemical Formula 4], The above hydride comprises a layered crystal structure in which hydrogen ions ( H- ) are inserted between the Gd₂C layers, and The above hydride comprises a P-3m1 space group in which hydrogen ions ( H- ) exist at tetrahedral positions, and a P-31m space group in which hydrogen ions ( H- ) exist at tetrahedral and octahedral positions, and A hydride comprising a gadolinium ion ( Gd³⁺ ) and a hydrogen ion ( H⁻ ) in a tetrahedral position having a bond length shorter than the bond length between a gadolinium ion ( Gd³⁺ ) and a hydrogen ion ( H⁻ ) in an octahedral position. [Chemical Formula 4] Gd 2 CH x (2<x<3)
  8. In Article 7, A hydride comprising a hydrogen ion ( H- ) located in some of the octahedral positions and not present in the remaining parts of the octahedral positions, such that there is a deficiency of hydrogen ions ( H- ) in the octahedral positions.
  9. In Article 7, The bond length between the gadolinium ion ( Gd³⁺ ) and the hydrogen ion ( H⁻ ) in the tetrahedral position is 0.224 nm, and A hydride comprising a gadolinium ion ( Gd³⁺ ) and a hydrogen ion ( H⁻ ) in an octahedral position having a bond length of 0.260 nm.
  10. Among the hydrides according to claim 6 or 7, the step of preparing a hydride according to any one of the claims; A step of cleaving the hydride under vacuum conditions of an inert gas atmosphere and at a temperature exceeding 4K; A step of generating a single carrier on the surface of the cleaved hydride; and A method for manipulating a single carrier using a hydride, comprising the step of moving a single carrier on the surface of the cleaved hydride.
  11. In Article 10, The above hydride includes that represented by the following [Chemical Formula 4], and The step of cleaving the hydride includes exposing the (002) surface of the hydride, and The exposed surface of the cleaved hydride is provided with electron capture sites comprising gadolinium ions ( Gd³⁺ ) and hydrogen ions ( H⁻ ) arranged in a triangular lattice structure on the gadolinium ions ( Gd³⁺ ), and A method for manipulating a single carrier using a hydride, comprising: a gadolinium ion ( Gd³⁺ ) at the electron capture site attracting a single carrier, and a hydrogen ion ( H⁻ ) arranged in a triangular lattice structure preventing the single carrier from diffusing in a direction parallel to the (002) plane, thereby capturing the single carrier at the electron capture site. [Chemical Formula 4] Gd 2 CH x (2<x<3)
  12. In Article 11, In the step of cleaving the above hydride, Vacuum conditions include being controlled to 5x10⁻¹¹ Torr or less, and A method for operating a single carrier using a hydride, wherein the temperature is controlled to be between 4.3K and 20K.
  13. In Article 10, In the step of generating a single carrier on the surface of the cleaved hydride, A pulse voltage is applied between the cleaved hydride and a scanning tunneling microscope tip disposed on the cleaved hydride, thereby generating a single carrier on the surface of the cleaved hydride. A method for manipulating a single carrier using a hydride containing a single electron.
  14. In Article 13, The cleaved hydride comprises that represented by [Chemical Formula 4], and A method for operating a single carrier using a hydride, wherein the magnitude of the above pulse voltage is controlled to be greater than -4.0V and less than -4.5V. [Chemical Formula 4] Gd 2 CH x (2<x<3)
  15. In Article 10, The step of moving a single carrier on the surface of the cleaved hydride comprises moving the scanning tunneling microscope tip while continuously applying a bias voltage between the cleaved hydride and the scanning tunneling microscope tip disposed on the cleaved hydride, thereby moving the single carrier. A method for manipulating a single carrier using a hydride in which the single carrier is a single electron.
  16. In Article 15, The cleaved hydride comprises that represented by [Chemical Formula 4], and A method for operating a single carrier using a hydride, comprising controlling the above bias voltage to be greater than -1.5V and less than -3.8V. [Chemical Formula 4] Gd 2 CH x (2<x<3)

Description

Hydride, method for producing the same, and method for manipulating a single carrier using the hydride The present invention relates to a hydride, a method for manufacturing the same, and a method for operating a single carrier using the hydride. More specifically, the invention relates to a hydride comprising a layered crystal structure in which hydrogen ions ( H- ) are inserted between Gd₂C layers, a P-3m1 space group in which hydrogen ions ( H- ) exist at tetrahedral positions, and a P-31m space group in which hydrogen ions ( H- ) exist at tetrahedral and octahedral positions, a method for manufacturing the same, and a method for operating a single carrier using the hydride. Electrides are materials in which electrons have escaped traditional chemical bonds and exist as interstitial electrons in empty spaces within the crystal structure, rather than around the atomic nucleus, bonding to a positively charged lattice. Due to these characteristics, electron cargoes exhibit low work functions, high electron transfer efficiency, and unique chemical and physical properties, and are attracting attention as promising materials in various application fields such as electron-emitting materials, catalysts, and magnetic materials. Among the above electronic materials, the two-dimensional electronic material is a material in which interstitial electrons exist between positively charged layers. On the surface of the two-dimensional electronic material, a high concentration of pure electrons of 2 x 10¹⁴cm⁻² forms a two-dimensional electronic liquid phase, and electrons exist in a form floating up to 0.3 nm from the surface. Here, pure electrons refer to electrons existing in actual space, rather than electrons bound to orbitals around the atomic nucleus. The two-dimensional electronic liquid phase formed on the surface of an actual electronic cargo has interactions with atoms on the surface of the electronic cargo that are negligibly small. The electron concentration of this pure two-dimensional electronic liquid phase can be reduced to the level of 1 x 10¹³cm⁻² by reacting it with an alkali metal, but it is impossible to reduce it to 1 x 10¹¹ cm⁻² , where the electronic liquid phase transforms into a Wigner crystal, which is the solid phase of electrons. Research on pure electrons is garnering significant attention as the field of quantum computing advances. Quantum computing processes information using qubits, which are quantum bits, and pure electrons can function as qubits through their spin states. While well-known qubits are known to be implementable in systems such as superconductors, ion traps, and quantum dots, qubits in these systems possess short coherence times, making them susceptible to interference from external noise or interactions in the quantum superposition state. Consequently, due to the short time they exist in a stable state, it is crucial to develop qubits with long coherence times to improve the performance and stability of quantum computers. Qubits that can be formed from pure electrons can have the longest coherence time in a single electron, where there is no interaction between electrons. It is known that in real space, a single electron cannot exist independently without other particles or external influences because it possesses both wave and particle properties. Currently, the most widely used system in the field of pure electron research is liquid helium. It is known that electrons can be trapped by forming an artificial potential in a vacuum space away from helium atoms on the surface of liquid helium, and single electrons can be formed by controlling the strength of the artificial potential. Research has been conducted on whether single electrons formed in this way can function as qubits, and it has been reported that single electrons trapped on a solid neon surface can function as qubits with long coherence times. For example, U.S. Patent Publication US 10,892,398 B2 discloses a system configuration comprising a microwave control device, RF control, and readout electronics capable of controlling and measuring a single electron qubit generated from an electron floating on the surface of liquid helium, wherein the quantum state of the electron is implemented as a vertical Rydberg motion state or a lateral motion quantization state within an electrically formed trap. However, these studies must be conducted at very low temperatures; since helium exists as a liquid only at low temperatures and the fluidity of liquid helium must be suppressed, single-electron formation studies are possible at temperatures around 10 mK. Furthermore, recent experimental studies utilizing solid-state neon systems have also been conducted at 7 mK. In addition, because helium is electrically neutral and has very weak interactions with electrons, precise positional control and control of electron mobility are difficult. Additionally, even if a single electron is formed, there is a possibility that it may intera