KR-20260064568-A - SEMICONDUCTOR DEVICE AND METHOD OF FORMING POWER IC AS PMIC WITH MAGNETIC CORE

Abstract

A semiconductor device comprises a first substrate and a first electrical component disposed on a first surface of the first substrate. A second electrical component is disposed on a second surface opposite to the first surface of the first substrate. The second electrical component exhibits magnetic attraction from a magnetic material or a magnetic coil. The first substrate includes an opening, and the second electrical component has one or more supports extending through the opening of the first substrate. A third electrical component is disposed on the second substrate, and the second substrate is disposed on the first substrate. A conductive post electrically connects the first substrate and the second substrate. An encapsulant may be applied around the first electrical component, and a shielding layer is disposed on the second electrical component. The second electrical component may provide a power management function.

Inventors

• 이섭인
• 송지나
• 최영인
• 여정현

Assignees

• 스태츠 칩팩 매니지먼트 피티이. 엘티디.

Dates

Publication Date

20260507

Application Date

20251027

Priority Date

20241030

Claims (15)

1. As a semiconductor device, the semiconductor device is: First substrate; A first electrical component disposed on a first surface of a first substrate; and A second electric component disposed on a second surface opposite to the first surface of a first substrate and exhibiting magnetic attraction A semiconductor device characterized by including
2. A semiconductor device according to claim 1, wherein the first substrate includes an opening, and the second electrical component includes a support portion penetrating the opening of the first substrate.
3. A semiconductor device according to claim 1, wherein the second electrical component comprises a magnetic material.
4. A semiconductor device according to claim 1, wherein the second electrical component comprises a magnetic coil.
5. In paragraph 1, Second substrate; and A third electrical component disposed on the second substrate disposed on the first substrate A semiconductor device characterized by further including
6. As a semiconductor device, the semiconductor device is: First substrate; A first electrical component disposed on a first surface of a first substrate; and A second electrical component magnetically attracted to a second surface of a first substrate opposite to a first surface of the first substrate A semiconductor device characterized by including
7. A semiconductor device according to claim 6, wherein the first substrate includes an opening, and the second electrical component includes a support portion extending through the opening of the first substrate.
8. A semiconductor device according to claim 6, wherein the second electrical component comprises a magnetic material.
9. A semiconductor device according to claim 6, wherein the second electrical component comprises a magnetic coil.
10. A semiconductor device according to claim 6, further comprising a shielding layer disposed over the second electrical component.
11. A method for manufacturing a semiconductor device, wherein the method is: Step of providing a first substrate; A step of placing a first electrical component on a first surface of the first substrate; and Step of placing a second electrical component that is magnetically attracted to the second surface of the first substrate opposite to the first surface of the first substrate. A method for manufacturing a semiconductor device characterized by including
12. In Paragraph 11, A step of forming an opening in the first substrate; and A step of providing a support member extending from the second electrical component and disposed within an opening of the first substrate. A method for manufacturing a semiconductor device characterized by further including
13. A method for manufacturing a semiconductor device according to claim 11, wherein the second electrical component comprises a magnetic material.
14. A method for manufacturing a semiconductor device according to claim 11, wherein the second electrical component comprises a magnetic coil.
15. In Paragraph 11, Step of providing a second substrate; Step of placing a third electrical component on the second substrate; and Step of placing the second substrate on the first substrate A method for manufacturing a semiconductor device characterized by further including

Description

Semiconductor device and method for forming a power integrated circuit (IC) as a power management integrated circuit (PMIC) having a magnetic core The present invention generally relates to semiconductor devices, and more specifically, to a semiconductor device and a method for forming a power integrated circuit (IC) implemented as a power management integrated circuit (PMIC) having a magnetic core. Semiconductor devices are commonly found in modern electronic products. They perform a wide range of functions, including signal processing, high-speed computing, transmission and reception of electromagnetic signals, control of electronic devices, optoelectric conversion, and image generation for television displays. Semiconductor devices are found in the fields of communications, power conversion, networks, computers, entertainment, and consumer electronics. They are also found in military applications, aviation, automotive, industrial controllers, and office equipment. Semiconductor devices often contain one or more Integrated Passive Devices (IPDs) to perform electrical functions required, particularly in high-frequency applications such as radio frequency (RF) communication. Multiple semiconductor dies and IPDs can be integrated into a SiP module to provide higher density and extended electrical functionality within a small space. Within the SiP module, semiconductor dies and IPDs are placed on a substrate for structural support and electrical interconnection. An encapsulating agent is deposited on the semiconductor dies, IPDs, and substrate. FIGS. 1a to 1c illustrate a semiconductor wafer having a plurality of semiconductor dies separated by a top street. FIGS. 2a to 2w illustrate a process for forming a power integrated circuit (IC) as a power management integrated circuit (PMIC) having a magnetic core. Figures 3a to 3h illustrate the process of forming different parts of the PMIC. FIGS. 4a and FIGS. 4b illustrate a PMIC formed into a wafer shape and then singulated into individual packages. Figures 5a and 5b show cross-sectional views of a PMIC. FIG. 6 illustrates a printed circuit board (PCB) having various types of packages placed on the surface of the printed circuit board (PCB). Detailed description of the drawing The present invention is described below with reference to one or more embodiments with reference to the drawings, and identical or similar elements are indicated by the same reference numerals. Although the present invention is described in the best mode for achieving the object of the invention, those skilled in the art will understand that it is intended to include alternatives, modifications, and equivalents that may be included within the spirit and scope of the invention as defined by the appended claims and equivalents supported by this specification and drawings. As used herein, the term "semiconductor die" refers to both singular and plural forms and thus may mean both a single semiconductor device and multiple semiconductor devices. Semiconductor devices are generally manufactured through two complex processes: front-end and back-end manufacturing. The front-end manufacturing process involves forming multiple dies on the surface of a semiconductor wafer. Each die on the wafer contains active and passive electrical components, which are electrically connected to form a functional electrical circuit. Active electrical components, such as transistors and diodes, possess the ability to control the flow of current. Passive electrical components, such as capacitors, inductors, and resistors, generate the relationship between voltage and current necessary to perform the functions of the electrical circuit. Backend manufacturing refers to cutting or singulating a finished wafer into individual semiconductor dies and packaging the semiconductor dies for structural support, electrical interconnection, and environmental insulation. To singulate semiconductor dies, the wafer is cut and fractured along a non-functional area of the wafer called the saw street or scribe. The wafer is singulated using a laser cutting tool or a saw blade. After singulation, the individual semiconductor dies are placed on a package substrate containing pins or contact pads for interconnection with other system components. Contact pads formed on the semiconductor dies are connected to contact pads within the package. Electrical connections can be formed using a conductive layer, bumps, stud bumps, conductive paste, or wire bonds. An encapsulant or other molding material is deposited on the package to provide physical support and electrical insulation. The finished package is inserted into an electrical system, and the functionality of the semiconductor device is provided to other system components. FIG. 1a illustrates a semiconductor wafer (100) having a base substrate material (102), such as silicon, germanium, aluminum phosphide, aluminum arsenide, gallium arsenide, gallium nitride, indium phosphide, silicon carbi