KR-20260064572-A - MANIFOLD STRUCTURE AND SUBSTRATE PROCESSING SYSTEMS USING THE SAME

KR20260064572AKR 20260064572 AKR20260064572 AKR 20260064572AKR-20260064572-A

Abstract

A manifold structure is disclosed. For the simultaneous use of multiple gases, the present disclosure provides a manifold, wherein the manifold comprises: a gas inlet portion disposed at the top of the manifold—wherein the gas inlet portion comprises a main gas channel in its center—; a plurality of main body portions disposed below the gas inlet portion along a vertical axis; and a mixing portion disposed below the gas inlet portion along the vertical axis, wherein the mixing portion comprises a plurality of sub-gas channels, a main gas channel, and a gas mixing space, wherein the gas inlet portion, the plurality of main body portions, and the mixing portion are aligned, and each of the main body portions comprises a main gas channel in its center, a plurality of sub-gas channels disposed around the main gas channel, and a side hole used for injecting gas into the sub-gas channels.

Inventors

니티시 마노하르 장갈레
파텔 키샨 아슈크바이

Assignees

에이에스엠 아이피 홀딩 비.브이.

Dates

Publication Date: 20260507
Application Date: 20251027
Priority Date: 20241030

Claims (14)

A manifold used in a substrate processing system for injecting gas to process a substrate, wherein the manifold is, A gas inlet portion having a main gas channel positioned at the top of the manifold and positioned at the center of the gas inlet portion; A plurality of body parts positioned below the gas inlet part along the vertical axis; and A mixing section positioned at the bottom along the vertical axis and including a plurality of sub-gas channels, a main gas channel, and a gas mixing space, wherein The gas inlet portion, the plurality of body portions, and the mixing portion are aligned to prevent gas leakage between the gas inlet portion, the plurality of body portions, and the mixing portion, and A manifold comprising a plurality of body portions including a main gas channel at the center, a plurality of sub-gas channels arranged around the main gas channel, and side holes configured to inject gas into the sub-gas channels.
A manifold according to claim 1, wherein the cross-sectional shape of the body portion is one of a circle or an n-lateral polygon, and n is 3 or greater.
In paragraph 2, each of the above body parts has more than one side hole, a manifold.
A manifold according to claim 1, wherein the radius of the main gas channel is larger than the radius of the sub gas channel.
In claim 1, each of the above body parts is a manifold having a predetermined thickness.
A manifold according to claim 1, wherein the sub-gas channel of the body portion directly attached to the gas inlet portion is blocked except for the sub-gas channel connected to the corresponding side hole.
A manifold used in a substrate processing system for injecting gas to process a substrate, wherein the manifold is, Main gas channel positioned at the center along the vertical axis; A plurality of sub-gas channels around the main gas channel; and A plurality of side holes, each connected to a corresponding sub-gas channel; and A manifold comprising a gas mixing space disposed at the bottom of the manifold along the vertical axis, wherein the main gas channel and the plurality of sub-gas channels are fluidly connected to the gas mixing space.
A manifold according to claim 7, wherein the cross-sectional shape of the manifold is one of a circle or an n-lateral polygon, and n is 3 or greater.
In claim 7, the plurality of side holes are arranged on the main body and spaced vertically apart by a predetermined distance, forming a manifold.
In claim 7, the shape of the sub-gas channel is one of a straight line, a spiral curve, or a zigzag curve, a manifold.
In paragraph 7, the radius of the sub-gas channel is variable in the manifold.
As a substrate processing system, A susceptor equipped with a heater for supporting and heating a substrate; A chamber for surrounding and processing the above substrate; A showerhead for allowing gas into the chamber; and A manifold attachment hub configured to inject gas into the shower head to process the substrate, wherein the manifold attachment hub comprises a manifold hole, a gas injection space configured to collect gas from the manifold hole and send the gas to the shower head, and a gas path configured to connect each of the manifold hole and the gas injection space. At least one manifold is attached to one of the manifold holes of the manifold attachment hub, and the at least one manifold is, The gas inlet portion having a main gas channel positioned at the top of the manifold and positioned at the center of the gas inlet portion; A plurality of body parts positioned below the gas inlet part along the vertical axis; and A mixing section positioned at the bottom along the vertical axis and including a plurality of sub-gas channels, a main gas channel, and a gas mixing space, wherein The gas inlet portion, the plurality of body portions, and the mixing portion are aligned to prevent gas leakage between the gas inlet portion, the plurality of body portions, and the mixing portion, and A substrate processing system, wherein each of the above body parts comprises a main gas channel at the center, a plurality of sub-gas channels arranged around the main gas channel, and a side hole used to inject gas into the sub-gas channels.
As a substrate processing system, A susceptor equipped with a heater for supporting and heating a substrate; A chamber for surrounding and processing the above substrate; A showerhead for allowing gas into the chamber; and A manifold attachment hub configured to inject gas into the shower head to process the substrate, wherein the manifold attachment hub comprises a manifold hole, a gas injection space configured to collect gas from the manifold hole and send the gas to the shower head, and a gas path configured to connect each of the manifold hole and the gas injection space. At least one manifold is attached to one of the manifold holes of the manifold attachment hub, and the manifold is, A substrate processing system comprising: a main body including a main gas channel positioned at the center along a vertical axis, a plurality of sub-gas channels positioned around the main gas channel, and a plurality of side holes, wherein each of the plurality of side holes is connected to each of the sub-gas channels and used for injecting gas; and a gas mixing space positioned at the bottom of the manifold along the vertical axis, wherein the main gas channel and the plurality of sub-gas channels are fluidly connected to the gas mixing space.
A substrate processing system according to any one of claims 12 to 13, wherein the cross-sectional shape of the manifold attached to each of the manifold holes is different.

Description

Manifold Structure and Substrate Processing System Using the Same The present disclosure relates to a manifold generally used in semiconductor processing, and more specifically, to a manifold structure capable of simultaneously injecting a plurality of gases for substrate processing. Conventional showerhead reactors can use a limited number of precursors/gases, and new precursor/gas combinations can enable new pathways for process development. Therefore, a new manifold structure that does not limit the number of chemicals may be required. Accordingly, to meet the above requirements, the present disclosure provides a manifold structure that can easily configure and replace an extended number of chemicals. The content of the present invention is provided to introduce selected concepts in a simplified form. These concepts are described in more detail in the detailed description of exemplary embodiments of the present disclosure below. The content of the present invention is not intended to distinguish the principal or essential features of the claimed subject matter, nor is it intended to limit the scope of the claimed subject matter. According to one embodiment, a manifold used in a substrate processing system for injecting gas for processing a substrate may be provided, wherein the manifold comprises: a gas inlet portion having a main gas channel positioned at the top of the manifold and positioned at the center of a gas inlet portion; a plurality of body portions positioned below the gas inlet portion along a vertical axis; and a mixing portion positioned at the bottom along the vertical axis and comprising a plurality of sub-gas channels, a main gas channel, and a gas mixing space; wherein the gas inlet portion, the plurality of body portions, and the mixing portion are aligned to prevent gas leakage between the gas inlet portion, the plurality of body portions, and the mixing portion, and the plurality of body portions include a main gas channel at the center, a plurality of sub-gas channels positioned around the main gas channel, and a side hole configured to inject gas into the sub-gas channels. In one embodiment, the cross-sectional shape of the body part is either a circle or an n-lateral polygon, where n is 3 or more. In one embodiment, each body part has more than one side hole. In one embodiment, the radius of the main gas channel is larger than the radius of the sub-gas channel. In one embodiment, each body part has a predetermined thickness. In one embodiment, the sub-gas channel of the body part directly attached to the gas inlet part is blocked, except for the sub-gas channel connected to the corresponding side hole. According to another embodiment, a manifold used in a substrate processing system for injecting gas to process a substrate may be provided, wherein the manifold comprises a main gas channel positioned at the center along a vertical axis; a plurality of sub-gas channels around the main gas channel; a plurality of side holes, each of which is connected to a corresponding sub-gas channel; and a gas mixing space positioned at the bottom along the vertical axis, wherein the main gas channel and the plurality of sub-gas channels are connected to the gas mixing space. In one embodiment, the cross-sectional shape of the body is one of a circle or an n-lateral polygon, where n is 3 or greater. In one embodiment, a plurality of side holes are arranged on the main body and are vertically spaced apart by a predetermined distance. In one embodiment, the shape of the sub-gas channel is one of a straight line, a spiral curve, or a zigzag curve. In one embodiment, the radius of the sub-gas channel changes. According to another embodiment, a substrate processing system comprises: a susceptor having a heater for supporting and heating a substrate; a chamber for surrounding and processing the substrate; a showerhead for allowing gas into the chamber; and a manifold attachment hub configured to inject gas into the showerhead to process the substrate, wherein the manifold attachment hub comprises a manifold hole, a gas injection space configured to collect gas from the manifold hole and send the gas to the showerhead, and a gas path configured to connect each of the manifold hole and the gas injection space, and at least one manifold is attached to one of the manifold holes of the manifold attachment hub, and the at least one manifold comprises: a gas inlet portion having a main gas channel positioned at the top of the manifold and positioned at the center of a gas inlet portion; and a plurality of body portions positioned below the gas inlet portion along a vertical axis. A substrate processing system may be provided, comprising: a mixing portion disposed at the bottom along the vertical axis and including a plurality of sub-gas channels, a main gas channel, and a gas mixing space; wherein the gas inlet portion, the plurality of body portions, and the mixing portion are aligned to prevent gas leakage