KR-20260064587-A - SUBSTRATE PROCESSING APPARATUS

Abstract

A substrate processing device having a nozzle positioned below a substrate provides a mechanism that allows for position adjustment of the nozzle and facilitates maintenance work when replacing parts. The substrate processing device is equipped with a nozzle mechanism. The nozzle mechanism is equipped with two or more nozzle parts, each having a nozzle body and a nozzle driving part that reciprocates the nozzle body in the radial direction of the substrate, and is equipped with a support part that supports two or more nozzle parts collectively. The support part is configured to detachably support each nozzle part individually without removing the support part, and an uneven shape is formed on the nozzle driving part of each support part and nozzle part to define the position of each of the two or more nozzle parts relative to the support part.

Inventors

• 후쿠모토 쇼야
• 네모토 슈헤이

Assignees

• 가부시키가이샤 스크린 홀딩스

Dates

Publication Date

20260507

Application Date

20251028

Priority Date

20241030

Claims (6)

1. A rotating mechanism that maintains a circular substrate in a horizontal position and rotates it around a vertical axis passing through the center of the substrate, and A nozzle mechanism disposed below the above substrate, and The above nozzle mechanism is, In addition to having two or more nozzle units, each nozzle unit having a nozzle body that discharges a processing liquid from a discharge port toward the lower peripheral portion of the substrate and a nozzle driving unit that reciprocates the nozzle body in the radial direction of the substrate by means of an actuator, A support member is provided to collectively support the above two or more nozzle parts, and The above support member supports each of the two or more nozzle parts individually and detachably without removing the support member, and A substrate processing device having an uneven shape formed on the nozzle driving part of each of the support part and each of the two or more nozzle parts to define the position of each of the two or more nozzle parts relative to the support part.
2. In claim 1, The above-mentioned uneven shape is a substrate processing device having a positioning pin and a pin hole into which the positioning pin is fitted.
3. In claim 2, A substrate processing device characterized by having a plurality of combinations of the above-mentioned positioning pin and the above-mentioned pin hole.
4. In claim 3, A combination of the plurality of the above-mentioned positioning pins and the above-mentioned pin holes is formed along the radial direction, in a substrate processing device.
5. In claim 1, In the nozzle driving part above, a concave side with the uneven shape is formed, and A substrate processing device having a convex side with the aforementioned uneven shape formed on the above-mentioned support portion.
6. In claim 1, Each of the above two or more nozzle parts is screw-fixed to the support part on both sides in the direction in which the nozzle parts are adjacent to each other, and A substrate processing apparatus characterized in that the screw fixing positions on both sides are offset in the radial direction, and the screw fixing positions of each of the adjacent nozzle parts are aligned in the radial direction.

Description

Substrate Processing Apparatus The present invention relates to a substrate processing apparatus that processes a periphery of a substrate by supplying a processing liquid to the periphery of the substrate within the internal space of a chamber. There is a method for processing a circular or approximately circular substrate, such as a semiconductor wafer, to remove only the thin film at the periphery of the substrate among the thin films formed on at least one main surface of the substrate. For example, a technique is known in which an etching solution is supplied to the periphery while rotating the substrate to remove only the thin film outside the supply position of the etching solution. A process for removing a thin film in this manner is sometimes referred to as a bevel etching process. For example, in Patent Document 1, a substrate processing device housed in a processing chamber has a lower edge nozzle installed below the substrate to etch the lower edge of a substrate in a horizontal position. In this lower edge nozzle, a plurality of nozzles are mounted on a nozzle support member, and each of these nozzles discharges a processing liquid, such as a chemical solution or a rinse solution, upward toward the lower edge of the substrate. FIG. 1 is a plan view showing the schematic configuration of a substrate processing system equipped with one embodiment of a processing unit, which is a substrate processing device according to the present invention. FIG. 2 is a side view showing the internal structure of the processing unit. Figure 3 is a plan view of the processing unit. FIG. 4 is a drawing showing the structure and arrangement of a processing mechanism provided in the processing unit. FIG. 5 is a cross-sectional view of a nozzle block showing the structure of a single processing liquid discharge nozzle part provided in the processing mechanism, showing the state in which the nozzle body is most advanced. FIG. 6 is a perspective view of a nozzle block provided in the processing mechanism and shows a state in which one processing liquid discharge nozzle part is separated. FIG. 7 is a cross-sectional view of the nozzle head portion in the processing liquid discharge nozzle portion. FIG. 8 is a perspective view of the nozzle head portion seen from the discharge port side. FIG. 9 is a perspective view of the nozzle head portion seen from the lower side. Hereinafter, an embodiment of the present invention will be described in detail. FIG. 1 is a plan view showing a schematic configuration of a substrate processing system equipped with an embodiment of a processing unit (1), which is an embodiment of a substrate processing device according to the present invention. FIG. 1 is a schematic diagram showing the internal structure of the substrate processing system (100) in an easy-to-understand manner by excluding the outer wall panel and other parts of the configuration. This substrate processing system (100) is installed, for example, in a clean room and is a single-wafer type device that processes substrates (S) one by one. A substrate processing system (100) is equipped with a plurality of processing units (substrate processing devices) (1), each of which is the main processing unit for a substrate (S). In FIG. 1, four processing units (1) are shown arranged in a horizontal direction, but each processing unit (1) is also stacked in multiple layers in the vertical direction. In each of the plurality of processing units (1) equipped in the substrate processing system (100), substrate processing is performed using a processing liquid. Here, as the "substrate" in this embodiment, various substrates such as semiconductor wafers, glass substrates for photomasks, glass substrates for liquid crystal displays, glass substrates for plasma displays, substrates for Field Emission Displays (FEDs), substrates for optical discs, substrates for magnetic discs, and substrates for magneto-optical discs can be applied. Below, a substrate processing apparatus mainly used for processing semiconductor wafers is described as an example with reference to the drawings, but it can be applied in the same way to the processing of the various substrates exemplified above. The processing unit (1) of the present embodiment receives a substrate (S) having a thin film of a metal or a metal compound formed on one side and performs a process of removing only the peripheral portion of the thin film formed on the substrate (S) by etching. Such etching process may be called "bevel etching process" or simply "bevel process." Furthermore, all of the plurality of processing units (1) provided by the substrate processing system (100) may be in the form of performing such bevel etching process, or a plurality of types of processing units that perform different processes may be combined. As shown in FIG. 1, the substrate processing system (100) has a substrate processing area (110) for processing a substrate (S). An indexer unit (120) is installed adjac