KR-20260064588-A - SUBSTRATE PROCESSING APPARATUS

Abstract

A mechanism is provided that allows for adjustment of the nozzle position, high processing precision of the etching width, and suppression of particle leakage into the substrate processing area. The nozzle mechanism comprises a nozzle body and a nozzle driving unit that reciprocates the nozzle body in the radial direction of the substrate, and the nozzle body has an axial shape on the side opposite to the discharge port. The nozzle driving unit is connected to an actuator and comprises a shaft coupled to the axial shape, a bearing that supports the axial shape, and a receiving fixing unit that fixes and covers the actuator and the bearing, and the shaft and the bearing are arranged coaxially.

Inventors

• 후쿠모토 쇼야
• 네모토 슈헤이

Assignees

• 가부시키가이샤 스크린 홀딩스

Dates

Publication Date

20260507

Application Date

20251028

Priority Date

20241030

Claims (5)

1. A rotating mechanism that maintains a circular substrate in a horizontal position and rotates it around a vertical axis passing through the center of the substrate, and A nozzle mechanism disposed below the above substrate, and The above nozzle mechanism comprises a nozzle body that discharges a processing liquid from a discharge port toward the lower peripheral portion of the substrate, and The nozzle driving unit that reciprocates the nozzle body in the radial direction of the substrate, and The nozzle body has an axial portion extending inward in the radial direction on the side opposite to the discharge port in the radial direction, and The above nozzle drive unit is, One end is connected to an actuator, and the other end is coupled to the shaft-shaped part, and a shaft that moves the nozzle body, and At least one bearing installed to support the axial shape portion when the nozzle body is moved to the outermost radial direction, and In addition to fixing the actuator and the bearing, it is provided with a receiving fixing part that accommodates and covers at least the portion from the side where the shaft of the actuator is connected to the bearing. A substrate processing device characterized in that the shaft and the bearing are arranged coaxially.
2. In claim 1, The above bearing is a sleeve-type bearing extending in the radial direction, and A substrate processing device having the shaft-shaped portion inserted and passing through the outer end in the radial direction of the sleeve-shaped bearing, the shaft inserted and passing through the inner end in the radial direction of the sleeve-shaped bearing, and the shaft-shaped portion and the shaft coupled within the sleeve-shaped bearing.
3. In claim 1, A substrate processing device characterized in that the above actuator and the above bearing are fixed to the above receiving fixing part by an interference fit.
4. In claim 1, The above-mentioned shaft shape portion is a shaft hole into which the shaft is inserted, and has a shaft hole that is open toward the inner side in the radial direction and extends toward the outer side in the radial direction. A nut is secured in the above shaft hole by an interference fit, and A substrate processing device characterized by having a screw formed on the outer circumference of the shaft to screw into the nut.
5. In claim 1, A sealing ring is disposed on the outer side in the radial direction of the above bearing to seal the ring-shaped space between the bearing and the shaft-shaped part, and A ring-shaped groove is formed in the above-mentioned receiving fixing part for placing the seal ring, and The above seal ring is, A ring-shaped sliding contact portion that slides in contact with the outer surface of the above-mentioned shaft-shaped portion and along its entire circumference, and A substrate processing device characterized by having a ring-shaped contact portion that is in close contact with the inner surface and the entire circumference of the above-mentioned groove.

Description

Substrate Processing Apparatus The present invention relates to a substrate processing apparatus that processes a periphery of a substrate by supplying a processing liquid to the periphery of the substrate within the internal space of a chamber. As a process for a circular or approximately circular substrate, such as a semiconductor wafer, there is a method of removing only the thin film at the periphery of the substrate among the thin films formed on at least one main surface of the substrate. For example, a technique is known in which an etching solution is supplied to the periphery while the substrate is rotated, and only the thin film outside the supply position of the etching solution is removed. A process of removing a thin film in this manner is sometimes referred to as a bevel etching process. For example, in Patent Document 1, a substrate processing device housed in a processing chamber has a lower edge nozzle installed below the substrate to etch the lower edge of a substrate in a horizontal position. In this lower edge nozzle, a plurality of nozzles are mounted on a nozzle support member, and each of these nozzles discharges a processing liquid, such as a chemical solution or a rinse solution, upward toward the lower edge of the substrate. FIG. 1 is a plan view showing the schematic configuration of a substrate processing system equipped with one embodiment of a processing unit, which is a substrate processing device according to the present invention. FIG. 2 is a side view showing the internal structure of the processing unit. Figure 3 is a plan view of the processing unit. FIG. 4 is a drawing showing the structure and arrangement of a processing mechanism provided in the processing unit. FIG. 5 is a cross-sectional view of a nozzle block showing the structure of a single processing liquid discharge nozzle part provided in the processing mechanism, and shows a state in which the nozzle body is located at the origin. FIG. 6 is a cross-sectional view of a nozzle block showing the structure of a single processing liquid discharge nozzle part provided in the processing mechanism, and shows the state in which the nozzle body is extended to its maximum extent. Hereinafter, an embodiment of the present invention will be described in detail. FIG. 1 is a plan view showing a schematic configuration of a substrate processing system equipped with an embodiment of a processing unit (1), which is an embodiment of a substrate processing device according to the present invention. FIG. 1 is a schematic diagram showing the internal structure of the substrate processing system (100) in an easy-to-understand manner by excluding the outer wall panel and other parts of the configuration. The substrate processing system (100) is a single-wafer type device that is installed, for example, in a clean room and processes substrates (S) one by one. A substrate processing system (100) is equipped with a plurality of processing units (substrate processing devices) (1), each of which is the main processing unit for a substrate (S). In FIG. 1, four processing units (1) are shown arranged in a horizontal direction, but each processing unit (1) is also stacked in multiple layers in the vertical direction. In each of the plurality of processing units (1) equipped in the substrate processing system (100), substrate processing is performed using a processing liquid. Here, as the "substrate" in this embodiment, various substrates such as semiconductor wafers, glass substrates for photomasks, glass substrates for liquid crystal displays, glass substrates for plasma displays, substrates for Field Emission Displays (FEDs), substrates for optical discs, substrates for magnetic discs, and substrates for magneto-optical discs can be applied. Below, a substrate processing apparatus mainly used for processing semiconductor wafers is described with reference to the drawings, but it can be applied in the same way to the processing of the various substrates exemplified above. The processing unit (1) of the present embodiment receives a substrate (S) having a thin film of a metal or a metal compound formed on one side and performs a process of removing only the peripheral portion of the thin film formed on the substrate (S) by etching. Such etching process may be called "bevel etching process" or simply "bevel process." Furthermore, all of the plurality of processing units (1) provided by the substrate processing system (100) may be in the form of performing such bevel etching process, or a plurality of types of processing units that perform different processes may be combined. As shown in FIG. 1, the substrate processing system (100) has a substrate processing area (110) for processing a substrate (S). An indexer unit (120) is installed adjacent to the substrate processing area (110). The indexer unit (120) has a container holding unit (121) capable of holding multiple containers (C) for receiving substrates (S). The indexer unit (120) is equip