KR-20260064681-A - PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

KR20260064681AKR 20260064681 AKR20260064681 AKR 20260064681AKR-20260064681-A

Abstract

The disclosed plasma processing apparatus comprises a chamber, a substrate support within the chamber, a plasma generating unit, a bias power supply, an edge ring, a lift mechanism, a switch, and a control unit. The high-frequency power supply of the bias power supply and/or the plasma generating unit is electrically coupled to a support of the substrate support. The lift mechanism comprises a conductive ring, a rod, an actuator, and a connecting member, and is configured to move the edge ring up and down while supported by the conductive ring. The connecting member provides an electrical connection between the conductive ring and the support. The switch is configured to switch between a first state in which the edge ring and the support are electrically coupled to each other and a second state in which the edge ring and the support are electrically separated from each other. The control unit is configured to control the switch.

Inventors

오이카와 쇼
이시카와 마나부
구마가이 유키
사토 히로키
이마하시 다쿠미
구로다 료

Assignees

도쿄엘렉트론가부시키가이샤

Dates

Publication Date: 20260507
Application Date: 20240808
Priority Date: 20230929

Claims (20)

chamber and, It is a substrate support within the above chamber, and Expectations and, The power outage chuck above the corresponding expectation, A substrate support comprising, and A plasma generating unit comprising a high-frequency power source and configured to generate plasma within the chamber, and A bias power source configured to generate an electric bias to introduce ions from the plasma to the substrate on the substrate support, wherein the bias power source and/or the high-frequency power source are electrically coupled to the support, and An edge ring having conductivity and arranged to surround a substrate on the substrate support, and It is a lift mechanism configured to move the above edge ring up and down, and A conductive ring that is electrically coupled to the edge ring while supporting the edge ring loaded thereon, and A rod extending vertically from below the above-mentioned challenge ring, and An actuator configured to move the edge ring up and down through the rod and the conductive ring, and A connecting member providing an electrical connection between the above-mentioned challenge ring and the above-mentioned expectation, The corresponding lift mechanism including, A switch configured to switchably have a first state in which the edge ring and the expectation are electrically coupled to each other and a second state in which the edge ring and the expectation are electrically separated from each other, and A plasma processing device having a control unit configured to control the transition between the first state and the second state by the above-mentioned switch.
In paragraph 1, A plasma processing device, wherein the lift mechanism is the converter and is configured to form the second state by lowering the conductive ring by the actuator to separate the conductive ring from the edge ring.
In paragraph 1, The above-mentioned switch is a plasma processing device comprising a switching element connected between the connecting member and the conductive ring or between the connecting member and the support.
In paragraph 1, A plasma processing device comprising a separate lift mechanism configured to form the second state by lifting the edge ring from the conductive ring.
In any one of paragraphs 1 through 4, The above control unit is, If the plasma treatment specified by the recipe is a plasma treatment for a substrate on the substrate support, the converter is controlled to form the first state, and If the plasma treatment specified by the above recipe is plasma cleaning of the chamber, the converter is controlled to form the second state. Composed of, Plasma processing device.
In paragraph 3, The above control unit is, If the plasma treatment specified by the recipe is a plasma treatment for a substrate on the substrate support, the converter is controlled to form the first state, and If the plasma treatment specified by the above recipe is plasma cleaning of the chamber, the converter is controlled to form the second state, and Control the lift mechanism to set the height direction position of the edge ring when the plasma cleaning is being performed to a position higher than the height direction position of the edge ring when the plasma treatment on the substrate is being performed. A plasma treatment device configured.
In paragraph 6, The edge ring comprises an inner portion and an outer portion positioned on the conductive ring while the edge ring is supported by the conductive ring. The above outer periphery has a vertical length set to hide the conductive ring from the space above the substrate support when the plasma cleaning is being performed. Plasma processing device.
In paragraph 6, The above-described lift mechanism is a plasma processing device further comprising a film covering the surface of the conductive ring and protecting the conductive ring from plasma.
In any one of paragraphs 6 through 8, The above electrostatic chuck has an electrode embedded below the edge ring, and The plasma processing device further comprises another switching element electrically connected between the above-mentioned device and the above-mentioned electrode, and The above control unit is, When the above plasma cleaning is being performed, the switching element of the converter is controlled to disconnect the electrical connection between the conductive ring and the device, thereby connecting the conductive ring to ground, and When the above plasma cleaning is being performed, to control the other switching element to electrically connect the electrode and the above device to each other, Composed of, Plasma processing device.
In paragraph 4, The above-described lift mechanism has conductivity and further includes a protective member mounted on the conductive ring, The above control unit is, If the plasma treatment specified by the recipe is a plasma treatment for a substrate on the substrate support, the converter is controlled to form the first state, and If the plasma treatment specified by the above recipe is plasma cleaning of the chamber, the converter is controlled to form the second state, and A plasma processing apparatus configured to control the separate lift mechanism so that the height direction position of the edge ring when the plasma cleaning is being performed is set to a position higher than the height direction position of the edge ring when the plasma processing on the substrate is being performed, and also to a position spaced upward from the conductive ring and the protective member.
In Paragraph 10, A plasma treatment device in which the above protective member is formed of the same material as the material of the above edge ring.
In any one of paragraphs 1 through 4, The above control unit is, In order to form a concave portion on a substrate on the substrate support portion, the first state is formed in the converter, and plasma etching specified by the recipe is performed, Continuing, to remove the deposit on the substrate, the second state is formed in the converter, and an ashing treatment specified by the recipe is performed, After the ashing process, in order to increase the depth of the concave portion, the first state is formed in the converter, and plasma etching specified by the recipe is performed. Composed of, Plasma processing device.
In any one of paragraphs 1 through 4, The above control unit is, With the edge ring positioned on the substrate support, the second state is formed in the converter, and the first plasma cleaning of the chamber specified by the recipe is performed. Subsequently, with the edge ring positioned on the substrate support, the first state is formed in the converter, and the second plasma cleaning of the chamber specified by the recipe is performed. Subsequently, after the edge ring on the substrate support is replaced, the second state is formed in the converter, and the seasoning treatment of the chamber specified by the recipe is performed. Composed of, Plasma processing device.
In any one of paragraphs 1 through 4, Further equipped with a sensor configured to measure the amount of sediment on the edge ring, The above control unit is, To remove the above sediment, the first state is formed in the converter, and plasma cleaning of the chamber specified by the recipe is performed, To control the converter to form the second state when the amount of the deposit measured by the sensor during the execution of the above plasma cleaning becomes below the threshold. Composed of, Plasma processing device.
A plasma treatment method performed using a plasma treatment apparatus described in any one of claims 1 to 4, and The process in which the control unit reads the recipe, and A process for controlling the converter according to the above recipe, and A process for performing plasma treatment according to the above recipe, A plasma treatment method including
In paragraph 15, In the process of controlling the above-mentioned switch, If the plasma treatment specified by the above recipe is a plasma treatment for a substrate on the substrate support, the converter is controlled to form the first state, and If the plasma treatment specified by the above recipe is plasma cleaning of the chamber, controlling the converter to form the second state, Plasma treatment method.
In Paragraph 16, A plasma treatment method in which, when the above plasma cleaning is being performed, the position in the height direction of the edge ring is set to a higher position than the position in the height direction of the edge ring when the above plasma treatment is being performed on the substrate.
In Paragraph 17, When the above plasma cleaning is being performed, the electrical connection between the conductive ring and the device is severed, and the conductive ring is connected to ground, and When the above plasma cleaning is being performed, the electrode embedded in the electrostatic chuck below the edge ring and the above-mentioned device are electrically connected to each other by a switching element. Plasma treatment method.
In paragraph 15, In a process of controlling the converter to form a concave portion on a substrate on the substrate support portion, the first state is formed in the converter, and in the process of performing plasma treatment, plasma etching specified by the recipe is performed. Furthermore, in a process of controlling the converter to remove deposits on the substrate, the second state is formed in the converter, and in the process of performing plasma treatment, an ashing treatment specified by the recipe is performed. In a process of controlling the converter to increase the depth of the concave portion after the ashing process, forming the first state in the converter and performing plasma treatment, in the process of performing plasma etching specified by the recipe, Plasma treatment method.
In paragraph 15, In a process of controlling the converter while the edge ring is positioned on the substrate support, forming the second state in the converter and performing plasma treatment, the first plasma cleaning of the chamber specified by the recipe is performed, Continuing, in a process of controlling the converter while the edge ring is positioned on the substrate support, forming the first state in the converter and performing plasma treatment, in the process of performing a second plasma cleaning of the chamber specified by the recipe, Subsequently, after the edge ring on the substrate support is replaced, in the process of controlling the converter, forming the second state in the converter and performing plasma treatment, in the process of performing seasoning treatment of the chamber specified by the recipe. Plasma treatment method.

Description

Plasma Processing Apparatus and Plasma Processing Method An exemplary embodiment of the present disclosure relates to a plasma processing apparatus and a substrate processing system. A plasma processing apparatus is used for plasma processing of a substrate. The plasma processing apparatus includes a chamber and a substrate support. The substrate support is positioned within the chamber. The substrate support includes a stand and an electrostatic chuck. A bias power source is connected to the stand to generate an electric bias for introducing ions from the plasma into the substrate. The electrostatic chuck is configured to support the substrate and an edge ring surrounding the substrate. Patent Document 1 below discloses a plasma processing apparatus configured to move the edge ring up and down. Figure 1 is a diagram illustrating an example of the configuration of a plasma processing system. Figure 2 is a diagram illustrating an example of the configuration of a capacitance-coupled plasma processing device. FIG. 3 is a drawing illustrating a substrate support and a lift mechanism according to one exemplary embodiment. FIG. 4 is a drawing illustrating a substrate support and a lift mechanism according to another exemplary embodiment. FIG. 5 is a drawing illustrating a converter and a sensor of a plasma processing device according to one exemplary embodiment. FIG. 6 is a drawing illustrating a substrate processing system according to one exemplary embodiment. FIG. 7 is a drawing illustrating a substrate support and a lift mechanism according to another exemplary embodiment. FIG. 8 is a flowchart illustrating a plasma treatment method according to one exemplary embodiment. FIG. 9 is a flowchart illustrating a plasma treatment method according to another exemplary embodiment. FIG. 10 is a flowchart illustrating a plasma treatment method according to another exemplary embodiment. FIG. 11 is a block diagram of a processing circuit that performs the operation described in the present specification on a computer. FIG. 12 is a drawing illustrating a substrate support and a lift mechanism according to one exemplary embodiment. FIG. 13 is a drawing illustrating a substrate support and a lift mechanism according to another exemplary embodiment. FIG. 14 is a drawing illustrating a substrate support and a lift mechanism according to another exemplary embodiment. FIG. 15 is a drawing illustrating a substrate support and a lift mechanism according to another exemplary embodiment. FIG. 16 is a drawing illustrating a substrate support and a lift mechanism according to another exemplary embodiment. FIG. 17 is a drawing illustrating a substrate support and a lift mechanism according to another exemplary embodiment. FIG. 18 is a drawing illustrating a substrate support and a lift mechanism according to another exemplary embodiment. FIG. 19 is a drawing illustrating a substrate support and a lift mechanism according to another exemplary embodiment. FIG. 20 is a drawing illustrating a substrate support and a lift mechanism according to another exemplary embodiment. Hereinafter, various exemplary embodiments will be described in detail with reference to the drawings. In addition, in each drawing, the same or substantial parts are given the same reference numerals. FIG. 1 is a drawing for explaining an example configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing device (1) and a control unit (2). The plasma processing system is an example of a substrate processing system, and the plasma processing device (1) is an example of a substrate processing device. The plasma processing device (1) includes a plasma processing chamber (10), a substrate support unit (11), and a plasma generation unit (12). The plasma processing chamber (10) has a plasma processing space. Additionally, the plasma processing chamber (10) has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas discharge port for discharging gas from the plasma processing space. The gas supply port is connected to a gas supply unit (20) described later, and the gas discharge port is connected to an exhaust system (40) described later. The substrate support unit (11) is disposed within the plasma processing space and has a substrate support surface for supporting a substrate. The plasma generation unit (12) is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be a capacitively coupled plasma (CCP), an inductively coupled plasma (ICP), an electron-cyclotron-resonance plasma (ECR), a helicon wave excited plasma (HWP), or a surface wave plasma (SWP). Additionally, various types of plasma generation units may be used, including an alternating current (AC) plasma generation unit and a direct current (DC) plasma generation unit. In one embodim