KR-20260064704-A - Method for manufacturing a semiconductor device, and a film-like adhesive

KR20260064704AKR 20260064704 AKR20260064704 AKR 20260064704AKR-20260064704-A

Abstract

In a method for manufacturing a semiconductor device, a semiconductor member (10) having micro-bumps, such as a minute copper filler (12) and a solder bump (13), is prepared on a semiconductor wafer (11). Then, a non-conductive film (NCF) (20) is laminated onto the semiconductor member (10) to cover the copper filler (12) and the solder bump (13). During this lamination, the NCF (20) is configured to be thicker than the height of the connection portion (14) containing the copper filler (12) and the solder bump (13). Afterward, the thick NCF (20) is ground with a CMP to make the surface (13a) of the solder bump (13) and the surface (20c) of the NCF (20A) coplanar. According to this method, even when the NCF is applied to the micro-bump, thickness variation of the NCF and the presence of voids can be suppressed. In addition, deformation of microbumps during lamination can also be suppressed. This method can be applied to CoW and WoW.

Inventors

우에노 게이코
가토 사다아키
강동철

Assignees

가부시끼가이샤 레조낙

Dates

Publication Date: 20260507
Application Date: 20240904
Priority Date: 20230905

Claims (18)

A process for preparing a composite having a semiconductor substrate, a connection portion provided on a main surface of the semiconductor substrate, and a film-like adhesive provided on the main surface of the semiconductor substrate to cover the connection portion, and The above-mentioned composite has a process for grinding the film-like adhesive, and A method for manufacturing a semiconductor device in which the above film-like adhesive is thicker than the height of the connection portion in the above preparation process.
In claim 1, A method for manufacturing a semiconductor device, wherein the above film-like adhesive has a thickness of at least 1.2 times the height of the connection portion in the above preparation process.
In claim 1, A method for manufacturing a semiconductor device, wherein the above film-like adhesive has a thickness of at least 1.5 times the height of the connection portion in the above preparation process.
In any one of claims 1 to 3, The above connection portion includes a connection terminal provided on the main surface of the semiconductor substrate and a bump provided on the connection terminal. A method for manufacturing a semiconductor device, wherein in the grinding process above, the film adhesive is ground so that the surface of the bump and the surface of the film adhesive become a single plane.
In any one of claims 1 to 4, The above film-like adhesive, in the above preparation process, has a thickness of 15 μm or more, and A method for manufacturing a semiconductor device, wherein in the grinding process above, the film-like adhesive is ground so that the thickness of the film-like adhesive is 7 μm or less.
In any one of claims 1 to 5, A method for manufacturing a semiconductor device, further comprising a process of performing a curing treatment on the film-like adhesive of the bonded body before the grinding process.
In any one of claims 1 to 6, The process of preparing the above-mentioned composite is, A process for preparing a semiconductor member having the above semiconductor substrate and the above connection portion, and The method includes a process of attaching the film-like adhesive to the semiconductor substrate to cover the connection portion of the semiconductor member, and A method for manufacturing a semiconductor device, wherein the above film-like adhesive is at least thicker than the height of the connection portion after being attached to the semiconductor substrate.
In claim 7, The above film-like adhesive has a protective film provided on a surface opposite to the attachment surface to the semiconductor substrate, and The process of preparing the above-mentioned composite is, A process of grinding the back surface opposite to the main surface of the semiconductor substrate while the film-like adhesive having the protective film covers the connection portion, and A method for manufacturing a semiconductor device, comprising a process of peeling off the protective film after the process of grinding the semiconductor substrate and before the process of grinding the film-like adhesive.
In any one of claims 1 to 8, A method for manufacturing a semiconductor device, wherein in the process of grinding the film-like adhesive, the film-like adhesive is ground using at least one of a grinder, a surface planer, and a CMP device.
In any one of claims 1 to 8, A method for manufacturing a semiconductor device, wherein in the process of grinding the above-mentioned film-like adhesive, the above-mentioned film-like adhesive is ground using a CMP device.
In any one of claims 1 to 10, A method for manufacturing a semiconductor device, wherein the above film adhesive contains an epoxy resin, a curing agent, and a flux.
In any one of claims 1 to 11, A process of reorganizing the bonded body into a plurality of semiconductor chips after grinding the above film-like adhesive, and A method for manufacturing a semiconductor device, further comprising a process of mounting at least one semiconductor chip among the plurality of semiconductor chips on a substrate.
In claim 12, A method for manufacturing a semiconductor device, wherein the substrate is a semiconductor wafer having other connection portions, and in the mounting process, the connection portion of the at least one semiconductor chip is connected to the other connection portion of the semiconductor wafer.
In any one of claims 1 to 11, The method further comprises a process of bonding the first semiconductor wafer, which is the bonded body after grinding the film-like adhesive, to a second semiconductor wafer having another connection portion, and A method for manufacturing a semiconductor device in which, in the bonding process above, the connection portion of the first semiconductor wafer is connected to the other connection portion of the second semiconductor wafer.
A process for preparing a composite having a semiconductor substrate, a connection portion provided on a main surface of the semiconductor substrate, and a film-like adhesive provided on the main surface of the semiconductor substrate to cover the connection portion, and A film adhesive used in a method for manufacturing a semiconductor device comprising a process for grinding the film adhesive of the above-mentioned composite, wherein A film-like adhesive configured to be thicker than the height of the connection portion in the above preparation process.
In claim 15, The above film adhesive is a film adhesive having a thickness of at least 1.2 times the height of the connection portion in the above preparation process.
In claim 15, The above film adhesive is a film adhesive having a thickness of at least 1.5 times the height of the connection portion in the above preparation process.
In any one of claims 15 to 17, A film adhesive containing an epoxy resin, a curing agent, and a flux.

Description

Method for manufacturing a semiconductor device, and a film-like adhesive The present disclosure relates to a method for manufacturing a semiconductor device and a film-like adhesive. Flip-chip junctions are known in which conductive protrusions called bumps are formed on a semiconductor chip to directly connect the semiconductor chip to a wiring circuit board. Attempts have been made to multi-layer semiconductor chips into 4, 8, or 12 layers using such flip-chip junctions, and accordingly, the height of the bumps tends to be low and the diameter of the bumps tends to be small (see, for example, Non-patent Literature 1 and Non-patent Literature 2). FIG. 1 is a schematic cross-sectional view illustrating an example of a method for manufacturing a semiconductor device. FIG. 2 is a schematic cross-sectional view illustrating an example of a method for manufacturing a semiconductor device. FIG. 3 is a schematic cross-sectional view illustrating an example of a method for manufacturing a semiconductor device. FIG. 4 is a schematic cross-sectional view showing a comparative example of a method for manufacturing a semiconductor device. FIGS. 5(a) to FIGS. 5(d) are cross-sectional views showing the case where the manufacturing method of a semiconductor device according to the present embodiment is applied to a CoW (first modified example). FIGS. 6(a) to FIGS. 6(c) are cross-sectional views showing the case where the manufacturing method of a semiconductor device according to the present embodiment is applied to WoW (second modified example). Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the following description, identical or substantial parts are denoted by the same reference numerals, and redundant descriptions are omitted. Furthermore, positional relationships such as up, down, left, and right are based on the positional relationships shown in the drawings unless otherwise specifically stated. Additionally, the dimensional ratios in the drawings are not limited to the ratios shown. In this specification, the term "layer" includes, in addition to the structure of shape formed on the entire surface when observed as a plan view, the structure of shape formed on a part thereof. In this specification, the term "process" includes not only independent processes but also processes that cannot be clearly distinguished from other processes, provided that the intended function of the process is achieved. In this specification, numerical ranges indicated by "~" represent a range that includes the values listed before and after "~" as minimum and maximum values, respectively. In numerical ranges described stepwise in this specification, the upper or lower limit of a numerical range in any step may be substituted with the upper or lower limit of a numerical range in another step. In numerical ranges described in this specification, the upper or lower limit of said numerical range may be substituted with the values shown in the examples. With reference to FIGS. 1 to 3, a method for manufacturing a semiconductor device according to the present embodiment will be described. FIGS. 1, FIGS. 2 and FIGS. 3 are schematic cross-sectional views showing the method for manufacturing a semiconductor device in sequence. First, as shown in FIG. 1 (a), a semiconductor substrate (11) and a semiconductor member (10) having a plurality of connection terminals (12) (first connection portions) and a plurality of bumps (13) (second connection portions) provided on the main surface (11a) of the semiconductor substrate (11) are prepared. The semiconductor substrate (11) is, for example, an elemental semiconductor composed of elements of the same type such as silicon or germanium, or a semiconductor substrate including a compound semiconductor such as gallium arsenide or indium phosphide. In this embodiment, the case where the semiconductor substrate (11) is a semiconductor wafer is described as an example, but the semiconductor substrate (11) may be a semiconductor chip. The thickness of the semiconductor substrate (11) is, for example, 10 μm to 800 μm. Each of the bumps (13) is provided on a corresponding connection terminal (12). The connection terminal (12) and the bumps (13) may be metal layers containing one or more metals selected from, for example, gold, silver, copper, solder, nickel, tin, and lead. The main component of the solder may be, for example, tin-silver, tin-lead, tin-bismuth, tin-copper, or tin-silver-copper. The metal constituting the connection terminal (12) and the bumps (13) may be gold, silver, copper, or solder; silver, copper, or solder; copper or solder; or solder. The connection terminal (12) and the bumps (13) may be metal layers formed by plating. The connection terminal (12) and the bumps (13) may be a single layer or may include multiple metal layers. For example, the connection terminal (12) may be a copper filler, and the bump (13) may be a solder bu