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KR-20260064794-A - DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME

KR20260064794AKR 20260064794 AKR20260064794 AKR 20260064794AKR-20260064794-A

Abstract

A display device and a method for manufacturing a display device are disclosed. The display device comprises a substrate including a light-emitting region and a non-light-emitting region, a first semiconductor layer, a light-emitting layer, and a second semiconductor layer. The first semiconductor layer may include a light-emitting element comprising a first portion disposed in the light-emitting region and a second portion disposed in the non-light-emitting region, a pad electrode disposed on the second portion of the first semiconductor layer, a thin-film transistor disposed on the pad electrode, a pad insulating layer disposed between the pad electrode and the thin-film transistor, a pad connecting electrode connecting the thin-film transistor and the pad electrode, and a common electrode disposed on the upper portion of the light-emitting element.

Inventors

  • 신현억
  • 양성훈
  • 정인영

Assignees

  • 삼성디스플레이 주식회사

Dates

Publication Date
20260508
Application Date
20241029

Claims (20)

  1. A substrate including a light-emitting region and a non-light-emitting region; A light-emitting element comprising a first semiconductor layer, a light-emitting layer, and a second semiconductor layer, wherein the first semiconductor layer comprises a first portion disposed in the light-emitting region and a second portion disposed in the non-light-emitting region; A pad electrode disposed on a second portion of the first semiconductor layer; A thin-film transistor disposed on the pad electrode above; A pad insulating layer disposed between the pad electrode and the thin-film transistor; A pad connecting electrode connecting the above thin-film transistor and the above pad electrode; and A display device comprising a common electrode disposed on top of the light-emitting element.
  2. In paragraph 1, A first organic layer covering the side of the above-mentioned transistor; A source electrode and a drain electrode that penetrate the organic layer and are respectively connected to the source and drain of the transistor; and The transistor further comprises a transistor insulating layer that covers the source electrode and the drain electrode, and includes an opening that exposes at least a portion of the drain electrode. A display device in which the above-described pad connection electrode is disposed on the drain electrode exposed by the transistor insulating layer, penetrating the transistor insulating layer, organic layer, and pad insulating layer to contact the pad electrode.
  3. In paragraph 1, The above pad connection electrode is a display device disposed between the light-emitting element and the transistor.
  4. In paragraph 1, A display device in which the light-emitting layer is disposed on the first portion and the second semiconductor layer is disposed on the light-emitting layer.
  5. In paragraph 4, A display device in which the first semiconductor layer is a semiconductor layer doped with an n-type dopant and the second semiconductor layer is a semiconductor layer doped with a p-type dopant.
  6. In paragraph 5, The above-described light-emitting element is a display device further comprising a protective layer surrounding a portion of the side and top surfaces of a semiconductor layer disposed in the light-emitting region.
  7. In paragraph 5, The light-emitting element is a display device further comprising a conductive layer disposed on the second semiconductor layer.
  8. In paragraph 1, The light-emitting element is a display device further comprising an undoped semiconductor layer below the first semiconductor layer.
  9. In paragraph 1, A reflective layer formed on the above substrate; and A display device further comprising a buffer layer formed above the reflective layer and below the light-emitting element.
  10. In paragraph 1, A display device further comprising a second organic layer disposed above the thin-film transistor of the above-mentioned non-luminescent region and below the common electrode.
  11. A step of forming a first semiconductor layer, a light-emitting layer, and a second semiconductor layer on a substrate; A step of etching the second semiconductor layer, the light-emitting layer, and the first semiconductor layer, wherein the first semiconductor layer is formed such that the thickness of the first portion and the second portion are different to form a light-emitting element; A step of forming a pad electrode on a second portion of the first semiconductor layer; A step of forming a thin-film transistor on the pad electrode; and A method for manufacturing a display device comprising the step of forming a pad connecting electrode that connects the thin-film transistor and the pad electrode.
  12. In Paragraph 11, The step of forming a thin-film transistor on the pad electrode is, A pad insulating layer covering the above pad electrode is formed, and An active layer including a source region, a channel region, and a drain region is formed on the pad insulating layer above, and After forming a gate insulating layer on an active layer and a gate electrode on the gate insulating layer, a first organic layer is formed that covers both the gate electrode and the active layer. A method for manufacturing a display device that forms a source electrode connected to the source region and a drain electrode connected to the drain region by penetrating a first organic layer.
  13. In Paragraph 12, The step of forming a pad connecting electrode that connects the thin-film transistor and the pad electrode is: A transistor insulating layer covering the source electrode and drain electrode is formed, and A method for manufacturing a display device, wherein a connection hole is formed that penetrates the transistor insulating layer, the first organic layer, and the pad insulating layer to expose the pad electrode, and a pad connecting electrode is formed that connects the drain electrode and the pad electrode through the connection hole.
  14. In Paragraph 11, Prior to the step of forming a first semiconductor layer, a light-emitting layer, and a second semiconductor layer on a substrate, Step of depositing a reflective layer on the above substrate; and A method for manufacturing a display device further comprising the step of forming a buffer layer on the above-mentioned reflective layer.
  15. In Paragraph 11, A second organic layer covering the pad connection electrode and the transistor is formed, and A method for manufacturing a display device that forms a common electrode covering the second organic layer and the light-emitting element.
  16. In Paragraph 11, A method for manufacturing a display device in which the substrate is at least one of a glass substrate, a stainless steel substrate, and a polymer substrate.
  17. In Paragraph 11, In the step of forming the light-emitting element, A method for manufacturing a display device that forms a protective layer surrounding the side and one surface of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer of the first part.
  18. In Paragraph 11, A method for manufacturing a display device in which the above pad connection electrode is formed between the light-emitting element and the transistor.
  19. In Paragraph 11, In the step of forming a first semiconductor layer, a light-emitting layer, and a second semiconductor layer on a substrate, A method for manufacturing a display device, wherein at least one of an undoped semiconductor layer and a conductive layer is further formed between the substrate and the first semiconductor layer and on the second semiconductor layer.
  20. In Paragraph 11, A method for manufacturing a display device in which the first semiconductor layer is a semiconductor layer doped with an n-type dopant and the second semiconductor layer is a semiconductor layer doped with a p-type dopant.

Description

Display device and method for manufacturing the same The present invention relates to a display device and a method for manufacturing the same. The importance of display devices is increasing along with the development of multimedia. In response to this, various types of display devices, such as Organic Light Emitting Displays (OLEDs) and Liquid Crystal Displays (LCDs), are being used. A device for displaying images of a display device includes a display panel such as an organic light-emitting display panel or a liquid crystal display panel. Among these, as a light-emitting display panel, it may include a light-emitting element, for example, an inorganic light-emitting element that uses an inorganic material as a light-emitting material. Representative techniques for forming semiconductor thin films of conventional inorganic light-emitting devices include the Metal Organic CVD (MOCVD) method and the Molecular Beam Epitaxy (MBE) method. In order to obtain semiconductor thin films using these methods, the substrate temperature must be maintained at a heated state of approximately 1,000 to 1,100 ℃. Accordingly, the substrate on which the semiconductor thin film of the inorganic light-emitting device is formed has been limited to single-crystal sapphire (Al2O3), silicon (Si), silicon carbide (SiC), etc., which have relatively high deformation temperatures. However, in the case of sapphire substrates, it is difficult to produce large-area wafers of 6 inches or larger, and the production cost is high, making it difficult to implement large-area displays such as large TVs. In addition, in the case of sapphire substrates, degradation problems such as warping of the substrate itself due to thermal expansion may occur, and damage to the thin film caused by differences in the lattice constant and thermal expansion coefficient between the semiconductor thin film formed on the substrate and the substrate may be an issue. In particular, when growing a semiconductor thin film on a single-crystal sapphire substrate using the MOCVD method, for example, in the manufacturing process of a Micro LED display, a process of transferring the light-emitting element to a second substrate, such as a glass substrate, is essential. When light-emitting diode (LED) transfer is required, the manufacturing and transfer process costs are high, which significantly increases the production cost of the display; consequently, this leads to an increase in the production cost of large TVs using LEDs such as Micro LEDs. Therefore, a technology was needed to grow semiconductor thin films directly on a substrate without a transfer process. FIG. 1 is a plan view of a display device according to one embodiment. FIG. 2 is a schematic layout diagram of the circuit of a display substrate of a display device according to one embodiment. FIG. 3 is an equivalent circuit diagram of a pixel of a display device according to one embodiment. FIG. 4 is a cross-sectional view showing an example of a pixel of a display substrate according to one embodiment. FIG. 5 is an enlarged view of area A of FIG. 4 according to one embodiment. FIG. 6 is a cross-sectional view showing an example of a single pixel of a display substrate according to another embodiment. FIG. 7 is a flowchart showing a method for manufacturing a display device according to one embodiment. FIGS. 8 to 17 are exemplary drawings for explaining a method of manufacturing a display device according to one embodiment. FIG. 18 is an exemplary drawing showing a smart device including a display device according to one embodiment. FIG. 19 is an exemplary drawing showing a vehicle including a display device according to one embodiment. FIG. 20 is an exemplary drawing showing a transparent display device including a display device according to one embodiment. The advantages and features of the present invention and the methods for achieving them will become clear by referring to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below but may be implemented in various different forms. These embodiments are provided merely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims. When elements or layers are referred to as being "on" another element or layer, this includes cases where another layer or element is interposed directly on or in the middle of another element. Throughout the specification, the same reference numerals refer to the same components. Shapes, sizes, ratios, angles, numbers, etc., disclosed in the drawings for describing embodiments are exemplary and therefore the invention is not limited to the depicted details. Although terms such as "first," "second," etc., are used to describe various components, it goes without saying that these c