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KR-20260065026-A - GAS RECOVERY SYSTEM FOR SEMICONDUCTOR PROCESS

KR20260065026AKR 20260065026 AKR20260065026 AKR 20260065026AKR-20260065026-A

Abstract

The present invention relates to a semiconductor process gas recovery system, and more specifically, provides a semiconductor process gas recovery system that can increase the recovery rate of the process gas by increasing the contact time with the inner wall for heat exchange of the fluid, by providing a plurality of flow guides arranged along a spiral direction within a gas adsorption unit, and allowing a process gas (fluid) used in a semiconductor process to flow along the plurality of flow guides within the gas adsorption unit toward the inner wall of the gas adsorption unit.

Inventors

  • 유신재
  • 김시준
  • 조철희
  • 성인호
  • 정원녕
  • 최민수

Assignees

  • 충남대학교산학협력단

Dates

Publication Date
20260508
Application Date
20241031

Claims (10)

  1. In a semiconductor process gas recovery system, Chamber (10); A gas supply unit (20) that supplies process gas to the above chamber; A high vacuum pump (30) and a low vacuum pump (40) that form a vacuum pressure inside the chamber; and A gas recovery device (100) that recovers liquefied gas provided between the high vacuum pump and the low vacuum pump Includes, The above gas recovery device (100) is, A gas adsorption unit (50) provided between the high vacuum pump and the low vacuum pump; and A gas recovery unit (60) that recovers the process gas adsorbed in the above gas adsorption unit to the above gas supply unit A semiconductor process gas recovery system characterized by including
  2. In paragraph 1, The above gas adsorption part (50) is, It has a tube shape connected to the above high vacuum pump and the above low vacuum pump, and A semiconductor process gas recovery system characterized by including a plurality of Euro guides (110) arranged along a spiral direction inside the above tube.
  3. In paragraph 2, Each of the above Euro guides is, A semiconductor process gas recovery system characterized by being fixed to a rod-shaped central fixing part (120) provided in the center of the above tube parallel to the longitudinal direction of the above tube.
  4. In paragraph 2, Each of the above Euro guides is, A semiconductor process gas recovery system characterized by having a funnel shape with an outlet wider than an inlet.
  5. In paragraph 2, Each of the above Euro guides is, A first pipe (701) having a predetermined cross-sectional area provided at the entrance side; and The outlet side has a cross-sectional area larger than that of the first pipe and is connected to the first pipe, and the expansion pipe (702) A semiconductor process gas recovery system characterized by including
  6. In paragraph 5, The above-mentioned multiple Euro guides are, A semiconductor process gas recovery system characterized by being arranged to form a preset interval.
  7. In paragraph 5, When viewed from the inlet of the above-mentioned gas adsorption section, The entrance area of the first section of a certain Euroguide is, A semiconductor process gas recovery system characterized by being positioned so as to completely obscure the outlet area of the expansion tube of the previously positioned Euroguide.
  8. In paragraph 3, The above gas adsorption unit is, At least one tube fixing part (130) for fixing the above central fixing part inside the tube of the gas adsorption part A semiconductor process gas recovery system characterized by further including
  9. In paragraph 8, Each of the above Euro guides and the above central fixing part is, A semiconductor process gas recovery system characterized by being formed of a dielectric or metal.
  10. In paragraph 2, The above gas recovery unit (60) is, A plurality of valves (21, 22, 23, 24) provided between components connected to the above gas adsorption unit; A cooling line (31) for cooling the gas adsorption part by wrapping around the outside of the gas adsorption part; A refrigerant section (25) that supplies refrigerant to the above cooling line; Insulating material (32) surrounding the above cooling line; and At least one temperature sensor (33) for measuring the temperature of the gas adsorption part A semiconductor process gas recovery system characterized by including

Description

Semiconductor Process Gas Recovery System The present invention relates to a semiconductor process gas recovery system, and more specifically, to a semiconductor process gas recovery system that can increase the recovery rate of the process gas by increasing the contact time with the inner wall for heat exchange of the fluid, by providing a plurality of flow guides arranged along a spiral direction within a gas adsorption unit, and allowing the process gas (fluid) used in the semiconductor process to flow along the plurality of flow guides within the gas adsorption unit toward the inner wall of the gas adsorption unit. Today, the process technology for manufacturing semiconductor devices is broadly divided into three stages: photolithography and development for pattern formation, deposition for stacking thin films, and etching for etching the stacked films according to the pattern. Among these, the deposition and etching processes utilize plasma generated from harmful gases of the PFC (Perfluorocarbon) and HFC (Hydrofluorocarbon) series, and various byproducts are formed as these gases decompose and recombine due to the plasma. These harmful gases have a very high Global Warming Potential (GWP), which is an indicator of global warming, and also have a long lifespan. Representative examples include CF₄ , cC₄F₅ , CHF₃ , SF₆ , and NF₃, which are classified as greenhouse gases. In the case of semiconductor manufacturing processes, the complexity of the process is increasing as device structures become more highly integrated. Consequently, the amount of hazardous gases used is rising, and the impact of semiconductor processes on global warming is also intensifying. Conventionally, scrubbers utilizing plasma discharge to remove this or recovery systems to recover harmful gases have been developed. However, conventional recovery systems have not shown high recovery rates, so measures are needed to increase the recovery rate through further development. Korean published patent [10-2009-0080778] discloses a method and system for recovering waste gas from semiconductor manufacturing equipment. Korean published patent [10-2018-0002962] discloses a chemical recovery system. Korean published patent [10-2021-0017902] discloses a harmful gas condensation recovery device and a recovery method. Korean registered patent [10-2273855] discloses a gas recovery device for semiconductor processes. The semiconductor process gas recovery device of the above-mentioned Korean registered patent [10-2273855] has a structure in which the recovery rate is low due to mechanical limitations and liquid nitrogen must be continuously consumed. Therefore, a process gas recovery system is required that can reduce the consumption of liquid nitrogen and increase the recovery rate. FIG. 1 is a simplified configuration diagram of a semiconductor process gas recovery system according to one embodiment of the present invention. FIG. 2 is a simplified circuit diagram of a semiconductor process gas recovery system according to one embodiment of the present invention. FIG. 3 is a simplified configuration diagram of the gas recovery device of FIG. 1. FIG. 4 is a side view of the gas adsorption section of FIG. 1. FIG. 5 is an internal perspective view of the gas adsorption part of FIG. 4. FIG. 6 is a view taken from the inlet side of the gas adsorption section of FIG. 4. FIG. 7a is a cross-sectional view of each flow guide provided within the gas adsorption section of FIG. 4. FIG. 7b is a drawing for explaining another embodiment of the gas adsorption unit of FIG. 4. FIG. 8 is a graph obtained by simulating the fluid velocity in a semiconductor process gas recovery system according to the present invention. FIG. 9 is a graph obtained by simulating the temperature of the fluid in the semiconductor process gas recovery system according to the present invention. The present invention is capable of various modifications and may have various embodiments, and specific embodiments are illustrated in the drawings and described in detail. However, this is not intended to limit the invention to specific embodiments, and it should be understood that the invention includes all modifications, equivalents, and substitutions that fall within the spirit and scope of the invention. When it is stated that one component is "connected" or "joined" to another component, it should be understood that while it may be directly connected or joined to that other component, there may also be other components in between. On the other hand, when it is stated that one component is "directly connected" or "directly coupled" to another component, it should be understood that there are no other components in between. The terms used in this specification are used merely to describe specific embodiments and are not intended to limit the invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this application, terms such as “comprising” o