KR-20260065183-A - CLEANING COMPOSITION AND METHOD OF PREPARING SEMICONDUCTOR DEVICE USING THE SAME

Abstract

The cleaning solution composition according to the embodiments of the present invention comprises a fluorine-based compound, an organic acid salt compound, an inorganic acid compound, and water. The water content is 50 weight% or more, and the pH of the cleaning solution composition is 0.5 to 4.

Inventors

• 백종욱
• 이기우
• 이동규

Assignees

• 동우 화인켐 주식회사

Dates

Publication Date

20260508

Application Date

20241101

Claims (13)

1. Includes fluorinated compounds, organic acid salt compounds, inorganic acid compounds and water, The water content is 50 weight% or more, and A cleaning solution composition having a pH of 0.5 to 4.
2. A cleaning solution composition having a pH of 1 to 3 in claim 1.
3. A cleaning solution composition according to claim 1, wherein the fluorine-based compound comprises an ionic bond between a hydrogen cation or an ammonium-based cation and a fluorine anion.
4. A cleaning solution composition according to paragraph 3, wherein the ammonium-based cation comprises 4 to 20 carbon atoms.
5. A cleaning solution composition according to claim 1, wherein the content of the fluorine-based compound is 0.005% by weight to 10% by weight of the total weight of the composition.
6. A cleaning solution composition according to claim 1, wherein the organic acid salt compound comprises an ionic bond between an ammonium-based cation and an organic acid-derived anion.
7. A cleaning solution composition according to claim 6, wherein the organic acid comprises at least one selected from the group consisting of formic acid, acetic acid, propionic acid, butyric acid, palmitic acid, stearic acid, oleic acid, oxalic acid, malonic acid, succinic acid, tartaric acid, maleic acid, glycolic acid, glutaric acid, adipic acid, sulfosuccinic acid, valeric acid, caproic acid, caprylic acid, capric acid, lauric acid, myristic acid, lactic acid, malic acid, citric acid, tartaric acid, benzoic acid, salicylic acid, p-toluenesulfonic acid, naphthoic acid, nicotinic acid, toluene acid, anisic acid, cuminic acid, and phthalic acid.
8. A cleaning solution composition according to claim 1, wherein the content of the organic acid salt compound is 0.01% to 10% by weight of the total weight of the composition.
9. A cleaning solution composition according to claim 1, wherein the inorganic acid compound comprises at least one selected from the group consisting of hydrochloric acid, phosphoric acid, sulfuric acid, and boric acid.
10. A cleaning solution composition according to claim 1, wherein the inorganic acid compound comprises a compound having an oxidation-reduction potential of 650 mV or less or a salt thereof.
11. A cleaning solution composition according to claim 1, wherein the water content is 80% by weight or more of the total weight of the composition.
12. A cleaning solution composition according to claim 1, which does not include an amine-based compound, an ammonium hydroxide-based compound, a metal hydroxide, a peroxide compound, an organic solvent, or a surfactant.
13. A step of forming a photoresist pattern on a substrate; A step of removing a portion of the photoresist pattern after etching; and A method for manufacturing a semiconductor device, comprising the step of cleaning the residue of the above photoresist pattern using a cleaning solution composition according to claim 1.

Description

Cleaning composition and method of preparing a semiconductor device using the same The present invention relates to a cleaning solution composition and a method for manufacturing a semiconductor device using the same. A highly integrated semiconductor device can be manufactured by applying a photoresist onto an insulating film material that insulates between wirings, curing it to form a mask pattern, performing dry etching, and removing the photoresist which is the mask pattern. An ashing process may be performed after the dry etching. During the above dry etching and/or ashing process, the residual photoresist may be modified, and the modified residual photoresist may remain on the surface of the wiring material or insulating film material. To remove the residual modified photoresist, a wet process using a cleaning solution composition may be utilized. It is desirable that the above cleaning solution composition selectively removes modified photoresist without damaging wiring materials containing conductive metals and insulating films containing organic materials or silicon-based inorganic materials. Conventional cleaning solution compositions failed to remove wiring containing metals such as ruthenium or sufficiently dissolve residual photoresist, thus requiring an improvement in the removal selectivity of the cleaning solution composition. Embodiments of the present invention provide a cleaning solution composition comprising a fluorine-based compound, an organic acid salt compound, an inorganic acid compound, and water. Additionally, a method for forming a photoresist pattern using the cleaning solution composition is provided. Hereinafter, embodiments of the present invention will be described in detail. A cleaning solution composition according to exemplary embodiments (hereinafter abbreviated as composition) comprises a fluorine-based compound, an organic acid salt compound, an inorganic acid compound, and water. The above-mentioned fluorine-based compound may be the main component for removing modified photoresist residue. The modified photoresist may be formed by a dry etching process or a photoresist ashing process. The dry etching or ashing process may be performed by a high-energy source, such as high-temperature heating or high-energy density light irradiation, and accordingly, the photoresist may be removed or modified. The modified photoresist may not be removed and may remain on the surface of the wiring or insulating film. The modified residual photoresist may include, for example, strong carbon-carbon bonds, carbon-silicon bonds, carbon-oxygen bonds, etc. The cleaning solution composition comprises a fluorine-based compound capable of reacting with said bonds. The fluorine-based compound can react with silicon to form silicon-fluorine bonds and can dissociate the residual modified photoresist. The above fluorine-based compound may include an ionic bond between a hydrogen cation or an ammonium-based cation and a fluorine anion. For example, the above fluorine-based compound may include an ionic bond between a hydrogen cation, an ammonium cation, or an ammonium-based cation containing at least one hydrocarbon group and a fluorine anion. The above ammonium cation may include one or more alkyl groups having 1 to 5 carbon atoms. For example, the above ammonium cation may include a methyl group, an ethyl group, a propyl group, a butyl group, etc. According to exemplary embodiments, the ammonium cation may contain 4 to 20 carbon atoms. According to some embodiments, the ammonium cation may contain 8 to 20 carbon atoms. For example, the above ammonium-based cations may include tetramethylammonium, tetraethylammonium, tetrapropylammonium, tetrabutylammonium, tetrapentylammonium, etc. For example, the above fluorine-based compounds may include hydrofluoric acid (HF), ammonium fluoride, methylammonium fluoride, tetramethylammonium fluoride, tetraethylammonium fluoride, tetrapropylammonium fluoride, tetrabutylammonium fluoride, etc. These may be used alone or in combination of two or more. According to exemplary embodiments, the content of the fluorinated compound may be 0.005 weight% to 10 weight% of the total weight of the composition. According to some embodiments, the content of the fluorinated compound may be 0.01 weight% to 10 weight% of the total weight of the composition. Within the above range, residual modified photoresist can be rapidly removed without damaging silicon-based film materials (e.g., SiO2 , SiN, etc.). The above composition includes an organic acid salt compound. The organic acid salt compound can react with the carbon component of the modified photoresist described above to form a complex, thereby removing the residual modified photoresist. Additionally, the organic acid salt compound can prevent the etching of the silicon-based film. According to exemplary embodiments, the organic acid salt compound may include an ionic bond between an ammonium cation and an organic acid-deri