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KR-20260065370-A - CMP slurry composition for polishing metal film and method of polishing metal film using the same

KR20260065370AKR 20260065370 AKR20260065370 AKR 20260065370AKR-20260065370-A

Abstract

The present invention relates to a slurry composition for polishing a metal film comprising colloidal silica abrasive particles; an oxidizing agent; and a titanium nitride film polishing control agent, and a method for polishing a metal film using the same.

Inventors

  • 유경민
  • 황진숙

Assignees

  • 주식회사 케이씨텍

Dates

Publication Date
20260508
Application Date
20241101

Claims (12)

  1. Colloidal silica abrasive particles; Oxidizing agent; and containing a titanium nitride film polishing modifier, Slurry composition for polishing metal films.
  2. In paragraph 1, The particle size of the above colloidal silica abrasive particles is 20 nm to 200 nm, Slurry composition for polishing metal films.
  3. In paragraph 1, The above colloidal silica abrasive particles are included in an amount of 0.0001% to 1% by weight relative to the total weight of the metal film polishing slurry composition, Slurry composition for polishing metal films.
  4. In paragraph 1, The above oxidizing agent comprises at least one selected from the group consisting of hydrogen peroxide, hydrogen peroxide, urea, percarbonate, periodic acid, periodate, perchloric acid, perchlorate, perbromic acid, perbrodate, perboric acid, perborate, permanganic acid, permanganate, persulfate, bromate, chlorate, hypochlorite, chromate, iodate, iodic acid, ammonium persulfate, benzoyl peroxide, calcium peroxide, barium peroxide, sodium peroxide, and urea peroxide. Slurry composition for polishing metal films.
  5. In paragraph 1, The above oxidizing agent is included in an amount of 0.05% to 4% by weight relative to the total weight of the metal film polishing slurry composition, Slurry composition for polishing metal films.
  6. In paragraph 1, The above titanium nitride film polishing modifier is an organic acid with a pK a value of -6 to 6, Slurry composition for polishing metal films.
  7. In paragraph 1, The titanium nitride film polishing modifier comprises one or more selected from the group consisting of oxalic acid, malonic acid, citric acid, malic acid, maleic acid, formic acid, lactic acid, acetic acid, picolinic acid, succinic acid, tartaric acid, glutaric acid, glutamic acid, glycolic acid, propionic acid, fumaric acid, salicylic acid, pimelic acid, benzoic acid, butyric acid, aspartic acid, sulfonic acid, phthalic acid, vinyl sulfonic acid, methyl sulfonic acid, methyl ethyl sulfonic acid, toluene sulfonic acid, polyvinyl sulfonic acid, and polybenzene sulfonic acid. Slurry composition for polishing metal films.
  8. In paragraph 1, The above titanium nitride film polishing modifier is included in an amount of 0.005% to 5% by weight relative to the total weight of the metal film polishing slurry composition, Slurry composition for polishing metal films.
  9. In paragraph 1, The film to be polished of the above metal film polishing slurry composition is titanium, titanium nitride, or a combination of both. Slurry composition for polishing metal films.
  10. In paragraph 1, The polishing rate of the above metal film polishing slurry composition for a titanium nitride film is 1000 Å/min to 2000 Å/min, Slurry composition for polishing metal films.
  11. In paragraph 1, The film to be polished of the above metal film polishing slurry composition comprises titanium nitride and silicon nitride, and A polishing selectivity ratio of titanium nitride film to silicon nitride film of 400 to 2000, Slurry composition for polishing metal films.
  12. A step of polishing a film to be polished comprising titanium, titanium nitride, or both, using the metal film polishing slurry composition of claim 1, A metal film polishing method comprising

Description

CMP slurry composition for polishing metal film and method of polishing metal film using the same The present invention relates to a slurry composition for polishing metal films and a method for polishing metal films using the same. Microelectronic device wafers are used to form integrated circuits. Microelectronic device wafers consist of a wafer, such as silicon, with patterned regions within the wafer for the deposition of different materials having insulating, conductive, or semiconductive properties. To achieve accurate patterning, excess material used to form layers on the wafer must be removed. Furthermore, to fabricate functional and reliable circuits, it is important to manufacture a flat or planar microelectronic wafer surface prior to subsequent processing. Therefore, it is necessary to remove and/or polish specific surfaces of the microelectronic device wafer. Chemical Mechanical Polishing (CMP) is a process in which any material is removed from the surface of a microelectronic device wafer, and the surface is polished by combining physical processes, such as polishing, with chemical processes, such as oxidation or chelation. In its most basic form, CMP involves applying a slurry, for example, a solution of abrasives and active compounds, to a polishing pad to achieve removal, planarization, and polishing processes by buffing the surface of the microelectronic device wafer. In the fabrication of integrated circuits, the CMP slurry must also be capable of preferentially removing films containing composite layers of metals and other materials so that a highly planar surface can be produced for subsequent lithography or patterning, etching, and thin film processing. CMP slurry compositions typically exhibit different polishing rates depending on the polishing target, and various slurry compositions capable of improving each polishing rate are developed and utilized depending on the type of polishing target. However, there is a demand for a CMP slurry composition that can improve the polishing rate and polishing selectivity for polishing target films containing titanium nitride and/or titanium, while minimizing the occurrence of secondary defects such as voids, dishing, and erosion that may occur due to polishing. Figure 1 is a diagram showing the results of evaluating the titanium nitride film polishing rate of a metal film polishing slurry composition according to one embodiment. Hereinafter, embodiments are described in detail with reference to the attached drawings. However, various modifications may be made to the embodiments, and thus the scope of the patent application is not limited or restricted by these embodiments. It should be understood that all modifications, equivalents, and substitutions to the embodiments are included within the scope of the rights. The terms used in the embodiments are for illustrative purposes only and should not be interpreted as intended to be limiting. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this specification, terms such as "comprising" or "having" are intended to indicate the existence of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and should be understood as not precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof. Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as generally understood by those skilled in the art to which the embodiments pertain. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and should not be interpreted in an ideal or overly formal sense unless explicitly defined in this application. In addition, when describing with reference to the attached drawings, identical components are assigned the same reference numeral regardless of drawing symbols, and redundant descriptions thereof are omitted. In describing the embodiments, if it is determined that a detailed description of related prior art could unnecessarily obscure the essence of the embodiments, such detailed description is omitted. In addition, terms such as first, second, A, B, (a), (b), etc. may be used when describing the components of the embodiments. These terms are used only to distinguish the components from other components, and the essence, order, or sequence of the components is not limited by the terms. Components included in any one embodiment and components having common functions shall be described using the same names in other embodiments. Unless otherwise stated, the descriptions given in any one embodiment may also apply to other embodiments, and specific descriptions shall be omitted to the extent of overlap. Throughout the specification, when a part is described as "includin