KR-20260065397-A - SUBSTRATE BONDING APPARATUS

KR20260065397AKR 20260065397 AKR20260065397 AKR 20260065397AKR-20260065397-A

Abstract

The technical concept of the present invention is to disclose a substrate bonding device. The disclosed substrate bonding device comprises: a first bonding chuck including a first base, a deformable plate supporting a first substrate on the first base, and a lift pin applying pressure to the lower surface of the deformable plate; a second bonding chuck including a second base fixing a second substrate positioned vertically opposite to the first substrate, an upper pressure portion applying pressure to the upper surface of the second substrate, and a picker for loading the second substrate; and a pressure and airflow control module positioned on the upper portion of the deformable plate and positioned on the edge portion of the first substrate, wherein the pressure and airflow control module may be configured to change the position where pressure near the edge of the first substrate and the second substrate is lowered when the first substrate and the second substrate are bonded to a second area located outside where an atmospheric pressure atmosphere is created in a first area located in the gap between the first substrate and the second substrate.

Inventors

박병탁
우시웅
이용주
임경빈
문지원
오노 카즈야
신동갑

Assignees

삼성전자주식회사

Dates

Publication Date: 20260508
Application Date: 20241101

Claims (10)

A first bonding chuck comprising a first base, a deformation plate supporting a first substrate on the first base, and a lift pin applying pressure to the lower surface of the deformation plate; A second bonding chuck comprising a second base for fixing a second substrate positioned opposite to the first substrate in a vertical direction, an upper pressure part for applying pressure to the upper surface of the second substrate, and a picker for loading the second substrate, and It includes a pressure and airflow control module disposed on the upper part of the deformation plate and disposed on the edge portion of the first substrate, The above pressure and airflow control module is, When the first substrate and the second substrate are bonded, A method configured to change the location where pressure is lowered near the edges of the first substrate and the second substrate to a second region located outside where an atmospheric pressure atmosphere is created, in a first region located in the gap between the first substrate and the second substrate. Substrate bonding device.
In Article 1, The above pressure and airflow control module is, A configuration configured to extend the length of the flow path through which gas escapes to the outside from between the first substrate and the second substrate. Substrate bonding device.
In Article 1, The above pressure and airflow control module is, Configured to exhaust a gas having a pressure condition higher than atmospheric pressure in a first region located in the gap between the first substrate and the second substrate, Substrate bonding device.
In Paragraph 3, The pressure conditions of the gas exhausted from the above pressure and airflow control module are, Characterized by being 20 kPa to 80 kPa greater than atmospheric pressure, Substrate bonding device.
In Article 1, The level of the upper surface of the pressure and airflow control module is higher than the level of the upper surface of the first substrate. Substrate bonding device.
In Article 1, The vertical thickness of the pressure and airflow control module is characterized by being thicker than the vertical thickness of each of the first substrate and the second substrate. Substrate bonding device.
In Article 1, The direction in which the bonding of the first substrate and the second substrate proceeds is from the center toward the edge, and The above pressure and airflow control module is, Configured to exhaust gas so as to reduce the flow rate in the direction in which bonding proceeds in a third region located in the central gap of the first substrate and the second substrate. Substrate bonding device.
In Article 1, It further includes a control unit, and The above control unit is configured to turn on and off whether the pressure and airflow control module is exhausted, Substrate bonding device.
In Article 8, The above pressure and airflow control module is, Characterized by operating after the step in which bonding proceeds from the center to the outer surface of each of the first substrate and the second substrate. Substrate bonding device.
In Article 1, The gas exhausted from the above pressure and airflow control module is characterized by containing helium (He). Substrate bonding device.

Description

Substrate Bonding Apparatus The disclosed embodiments relate to a semiconductor substrate bonding apparatus, and more specifically, to a substrate bonding apparatus capable of improving the reliability of a bonding process. In the manufacturing process of semiconductor devices, a substrate bonding process may be performed to bond two or more substrates together. This substrate bonding process can be carried out to improve the mounting density of semiconductor chips in the semiconductor device. For example, a semiconductor module having a stacked structure of semiconductor chips can be advantageous for improving chip mounting density, shortening wiring lengths between chips, and high-speed signal processing. When manufacturing semiconductor modules with a stacked semiconductor chip structure, bonding at the wafer level and then cutting into stacked semiconductor chip units can increase productivity compared to bonding at the chip level. The substrate bonding process can be performed using a wafer-to-wafer method, which directly bonds two wafers without a separate medium. In the wafer-to-wafer method, air gaps occur due to pressure differences caused by differences in flow rates; therefore, there is a need to develop a device that includes a module to prevent these air gaps. FIG. 1 is a schematic perspective view of a substrate bonding device according to one embodiment of the technical concept of the present invention. FIG. 2 is a cross-sectional view schematically showing a substrate bonding device according to one embodiment of the technical concept of the present invention. FIG. 3 is a cross-sectional view schematically illustrating the operation process of a substrate bonding device according to one embodiment of the technical concept of the present invention. FIG. 4 is a cross-sectional view schematically illustrating another operation process of a substrate bonding device according to one embodiment of the technical concept of the present invention. Figure 5 is an enlarged view of area A in Figure 4. FIG. 6 is a cross-sectional view schematically illustrating the airflow generated in the gap of a substrate bonding device according to one embodiment of the technical concept of the present invention. FIG. 7 is a cross-sectional view schematically illustrating the airflow occurring in the gap after the pressure and airflow control module included in the substrate bonding device according to one embodiment of the technical concept of the present invention is placed. FIG. 8 is a cross-sectional view schematically illustrating the airflow generated in the gap after the pressure and airflow control module included in the substrate bonding device according to one embodiment of the technical concept of the present invention has been operated. FIG. 9 is a flowchart illustrating a control method for a substrate bonding device according to one embodiment of the technical concept of the present invention. Figure 10 is a flowchart showing the detailed steps of step S160. FIG. 11a is a cross-sectional view showing step S110 of FIG. 9. FIG. 11b is a cross-sectional view showing step S120 of FIG. 9. FIG. 11c is a cross-sectional view showing step S130 of FIG. 9. FIG. 11d is a cross-sectional view showing step S140 of FIG. 9. FIG. 11e is a cross-sectional view showing step S150 of FIG. 9. FIG. 11f is a cross-sectional view showing step S161 of FIG. 10. Fig. 11g is a cross-sectional view showing step S162 of Fig. 10. FIG. 11h is a cross-sectional view showing step S163 of FIG. 10. FIG. 11i is a cross-sectional view showing step S170 of FIG. 9. The embodiments described herein are subject to various modifications and may take various forms; therefore, some embodiments are illustrated in the drawings and described in detail. However, this is not intended to limit the embodiments to a specific disclosed form. Furthermore, the embodiments described below are merely illustrative, and various modifications are possible from these embodiments. All examples or exemplary terms are used merely to describe technical ideas in detail, and unless limited by the claims, the scope is not limited by such examples or exemplary terms. Unless otherwise specified, in this specification, the vertical direction is defined as the Z direction, and the first horizontal direction and the second horizontal direction may each be defined as a horizontal direction perpendicular to the Z direction. The first horizontal direction may be referred to as the X direction, and the second horizontal direction may be referred to as the Y direction. The vertical level may refer to a height level according to the vertical direction (Z direction). The horizontal width of the first horizontal direction may refer to a length in the horizontal direction (X direction and/or Y direction), and the vertical length may refer to a length in the vertical direction (Z direction). FIG. 1 is a schematic perspective view of a substrate bonding device according to one embodimen