KR-20260065469-A - POWER MODULE

KR20260065469AKR 20260065469 AKR20260065469 AKR 20260065469AKR-20260065469-A

Abstract

A power module comprises a heat dissipation substrate, a carrier board, a wiring board, a power transistor chip set, a plurality of conductive members, a plurality of outer leads, and a package. The carrier board is installed on the heat dissipation substrate, and the carrier board comprises an insulating plate and a patterned metal circuit layer; the wiring board is installed on the patterned metal circuit layer, and the wiring board comprises a multilayer metal wiring structure; the power transistor chip set is installed on the wiring board, and the power transistor chips are electrically connected to each other through the multilayer metal wiring structure; the plurality of conductive members are electrically connected to the patterned metal circuit layer of the carrier board, and the plurality of outer leads are installed on the patterned metal circuit layer; and the package packages the heat dissipation substrate, the carrier board, the wiring board, the power transistor chip set, and the plurality of outer leads.

Inventors

차이 신-창
류 징-원

Assignees

액트론 테크놀로지 코포레이션

Dates

Publication Date: 20260508
Application Date: 20250220
Priority Date: 20241101

Claims (13)

In power modules, The heat dissipation substrate, carrier board, at least one wiring board, at least one power transistor chip set, a plurality of conductive members, a plurality of outer leads, and a package are included. The above heat dissipation substrate has an upper surface and a lower surface; The above carrier board is installed on the upper surface of the heat dissipation substrate and includes an insulating plate and a patterned metal circuit layer, wherein the insulating plate has an upper surface and the patterned metal circuit layer is installed on the upper surface of the insulating plate; The at least one wiring board is installed on a patterned metal circuit layer of the insulating plate body, and the at least one wiring board includes an internal packaging material and a multilayer metal wiring structure, and the multilayer metal wiring structure is embedded in the internal packaging material; The above at least one power transistor chip set includes a plurality of power transistor chips, the at least one power transistor chip set is installed on the at least one wiring board, and the plurality of power transistor chips are electrically connected to each other through the multilayer metal wiring structure; The plurality of conductive members are electrically connected to the patterned metal circuit layer of the carrier board and the at least one power transistor chip set; The plurality of outer leads are installed on a patterned metal circuit layer of the carrier board, and the plurality of outer leads are electrically connected to the at least one power transistor chip set; and A power module, wherein the above package packages the heat dissipation substrate, the carrier board, the at least one wiring board, the at least one power transistor chip set, and the plurality of outer leads, and the package has a bottom opening, and at least a portion of the bottom surface of the heat dissipation substrate is exposed to the bottom opening.
In paragraph 1, A power module, wherein the carrier board comprises a lower metal layer; the insulating plate has a lower surface, the lower metal layer is installed on the lower surface of the insulating plate, the lower metal layer and the patterned metal circuit layer are electrically isolated, and the lower metal layer is connected to the upper surface of the heat dissipation substrate.
In paragraph 1, A power module in which each of the power transistor chips of the above-mentioned at least one power transistor chip set is electrically connected to a patterned metal circuit layer of the carrier board through the above-mentioned multilayer metal wiring structure.
In paragraph 3, The multilayer metal wiring structure of the at least one wiring board comprises a metal support bottom layer, wherein the metal support bottom layer is located at the bottom of the internal packaging material; and the metal support bottom layer is connected to a patterned metal circuit layer of the carrier board and is electrically connected to at least one of the outer leads through the patterned metal circuit layer, power module.
In paragraph 1, A power module comprising: a patterned metal circuit layer of the carrier board including a plurality of conductive portions, two of which are a high-side conductive portion and a low-side conductive portion, and each of which has an area greater than that of the other conductive portion among the plurality of conductive portions; at least one wiring board including a high-side wiring board and a low-side wiring board, wherein the high-side wiring board is installed on the high-side conductive portion and the low-side wiring board is installed on the low-side conductive portion; and at least one power transistor chip set including a high-side power transistor chip set and a low-side power transistor chip set, wherein the high-side power transistor chip set is installed on the high-side wiring board and the low-side power transistor chip set is installed on the low-side wiring board.
In paragraph 5, Each of the above-mentioned high-side wiring board and the above-mentioned low-side wiring board has a multilayer metal wiring structure including a metal support bottom layer, each of the above-mentioned metal support bottom layers is located at the bottom of each of the above-mentioned internal packaging materials; the above-mentioned power transistor chip set is electrically connected to the above-mentioned conductive portion through the metal support bottom layer of the above-mentioned wiring board; and the below-mentioned power transistor chip set is electrically connected to the below-mentioned conductive portion through the metal support bottom layer of the below-mentioned wiring board, power module.
In paragraph 6, A power module comprising: a plurality of conductive parts including a power conductive part; a plurality of outer leads including a power lead, a ground lead, and an output lead; an inner end of the power lead installed in the power conductive part, an inner end of the ground lead installed in the lower conductive part, and an inner end of the output lead installed in the upper conductive part.
In Paragraph 7, A power module, wherein the plurality of conductive members comprises at least one first conductive member and at least one second conductive member, and the power conductive member is connected to the power connection electrode of each of the power transistor chips of the high-side power transistor chip set through the at least one first conductive member, and the high-side conductive member is connected to the power connection electrode of each of the power transistor chips of the low-side power transistor chip set through the at least one second conductive member.
In paragraph 8, A power module, wherein the power conductive part is located on one side of the high conductive part and the low conductive part; and the extension direction of the at least one first conductive member is perpendicular to the extension direction of the at least one second conductive member.
In paragraph 8, A power module in which the at least one first conductive member is at least one first metal bridge piece and the at least one second conductive member is at least one second metal bridge piece.
In paragraph 8, Each of the above-mentioned high-side wiring board and the above-mentioned low-side wiring board comprises a first upper connection pad, a plurality of second upper connection pads, and an internal circuit, wherein each of the first upper connection pads and each of the second upper connection pads are located on the upper side of each of the internal packaging materials, and each of the internal circuits is located on the interior of each of the internal packaging materials and connects each of the first upper connection pads and each of the second upper connection pads; the plurality of second upper connection pads of the above-mentioned wiring board are each connected to the control electrodes of the plurality of power transistor chips of the above-mentioned power transistor chip set; the plurality of second upper connection pads of the above-mentioned wiring board are each connected to the control electrodes of the plurality of power transistor chips of the above-mentioned power transistor chip set; the plurality of conductive parts include a high-side control conductive part and a low-side control conductive part; the plurality of outer leads include a high-side control lead and a low-side control lead; the inner end of the high-side control lead is installed in the high-side control conductive part, and the inner end of the low-side control lead is installed in the low-side control conductive part; A power module wherein the plurality of conductive members comprises a plurality of third conductive members; the high-side control conductive member is connected to a first upper connection pad of the high-side wiring board through at least one of the third conductive members, and the low-side control conductive member is connected to a first upper connection pad of the low-side wiring board through at least one of the third conductive members.
In Paragraph 11, A power module, wherein the high-side control lead is a conductive column and the low-side control lead is a conductive column; the high-side control lead and the low-side control lead are each installed vertically to the high-side control conductive part and the low-side control conductive part, respectively; the inner end of the high-side control lead is connected to the high-side control conductive part and the inner end of the low-side control lead is connected to the low-side control conductive part, and the outer ends of the high-side control lead and the low-side control lead protrude from the package.
In paragraph 1, A power module in which the internal packaging material of at least one wiring board is a polymer.

Description

Power Module The present invention relates to a packaging structure of a power transistor, and in particular to a power module having a wiring substrate. A conventional power module includes a carrier board, a plurality of power transistor chips, a lead frame, and a package. The carrier board has a patterned metal circuit layer. The plurality of power transistor chips are installed on the patterned metal circuit layer. The plurality of power transistor chips are electrically connected to each other by a bonding method and are electrically connected to each other through the patterned metal circuit layer. The lead frame is installed on the patterned metal circuit layer and electrically connects the plurality of power transistor chips. The package packages the carrier board, the plurality of power transistor chips, and the lead frame. Since the above-mentioned plurality of power transistor chips are electrically connected to each other via a wire junction method, a certain distance must be maintained between two adjacent power transistor chips to install a bent wire; if the distance is too short, the wire will be excessively bent and cannot be smoothly joined. Because space must be secured for installing the wire, a carrier board with a larger area is required to mount more power transistor chips in order to increase the power density of the power module by increasing the number of power transistor chips. Consequently, the volume of the power module increases, and additionally, the number of wires increases, making joining difficult, and the complexity of the patterned metal circuit layer also increases, which may affect heat dissipation efficiency. Therefore, the design of conventional power modules is not yet perfect and requires improvement. FIG. 1 is a perspective view of a power module of a first preferred embodiment of the present invention. FIG. 2 is a perspective view of a power module of a first preferred embodiment of the present invention at a different angle. FIG. 3 is a perspective view of a power module of a first preferred embodiment of the present invention, wherein the package is concealed. Figure 4 is a partial enlarged view of Figure 3. FIG. 5 is a schematic cross-sectional view of a power module of a first preferred embodiment of the present invention. FIG. 6 is a partially exploded perspective view of a wiring board and a power transistor chip of a first preferred embodiment of the present invention. FIG. 7 is a partially exploded perspective view of a wiring board of a first preferred embodiment of the present invention. FIG. 8 is a perspective view of a power module of a first preferred embodiment of the present invention, showing that a wiring board is installed on a carrier board. FIG. 9 is a plan view of a carrier board of a first preferred embodiment of the present invention. FIG. 10 is a perspective view of a power module of a first preferred embodiment of the present invention, showing that a carrier board is installed on a heat dissipation substrate. FIG. 11 is a schematic cross-sectional view of a power module of a second preferred embodiment of the present invention. To explain the present invention more clearly, preferred embodiments are described in detail below in conjunction with the drawings. Referring to FIGS. 1 to 11, a power module of a first preferred embodiment of the present invention comprises a heat dissipation substrate (10), a carrier board (12), at least one wiring board (20), at least one power transistor chip set (36), a plurality of conductive members (40), a plurality of outer leads (46), and a package (48). The heat dissipation substrate (10) has an upper surface (102) and a lower surface (104). The material of the heat dissipation substrate (10) may be, for example, a metal, a metal-containing compound, or graphite, but is not limited thereto; the metal may be, for example, copper or aluminum, and the metal-containing compound may be, for example, aluminum silicon carbide (AlSiC). The carrier board (12) is installed on the upper surface (102) of the heat dissipation substrate (10), and the carrier board (12) includes an insulating plate body (14) and a patterned metal circuit layer (16). The insulating plate body (14) has an upper surface (142) and a lower surface (144), and the patterned metal circuit layer (16) is installed on the upper surface (142) of the insulating plate body (14). In this embodiment, the carrier board (12) further includes a lower metal layer (18), the lower metal layer (18) is installed on the lower surface of the insulating plate body (14), and the lower metal layer (18) and the patterned metal circuit layer (16) are electrically isolated from each other. The carrier board (12) may be manufactured, for example, by active metal brazing (AMB) or direct bonding copper (DBC). The carrier board (12) is installed on the upper surface (102) of the heat dissipation substrate (10) by connecting the lower metal layer (18) and the upper surfa