KR-20260065493-A - ELECTRONIC APPARATUS AND METHOD OF MANUFACTURING THE SAME

KR20260065493AKR 20260065493 AKR20260065493 AKR 20260065493AKR-20260065493-A

Abstract

An electronic device comprises a circuit element layer including a scan driving unit and a pixel driving unit, and a display element layer including a light-emitting element connected to the pixel driving unit, wherein the circuit element layer comprises a first transistor included in the pixel driving unit, a second transistor included in the scan driving unit, and an insulating layer disposed between a first oxide semiconductor layer of the first transistor and a first gate of the first transistor, and wherein the insulating layer comprises a lower oxide layer, an upper oxide layer disposed on the lower oxide layer, and a nitride layer disposed between the lower oxide layer and the upper oxide layer and having a hydrogen concentration higher than that of the upper oxide layer.

Inventors

김경태
조성준
김기환
임준형
정현준
진종우

Assignees

삼성디스플레이 주식회사

Dates

Publication Date: 20260508
Application Date: 20250814
Priority Date: 20241025

Claims (20)

Substrate; A circuit element layer disposed on the above substrate and comprising a scan driving unit and a pixel driving unit; and It includes a display element layer comprising a light-emitting element disposed on the circuit element layer and connected to the pixel driving unit, and The above circuit element layer is, A first transistor included in the pixel driving unit and comprising a first oxide semiconductor layer and a first gate; A second transistor including a second oxide semiconductor layer and a second gate, which are included in the scan driving unit and disposed on a layer different from the first oxide semiconductor layer; and It includes an insulating layer disposed between the first oxide semiconductor layer and the first gate, and The above insulating layer is, Lower oxide layer; An upper oxide layer disposed on the lower oxide layer; and An electronic device comprising a nitride layer disposed between the lower oxide layer and the upper oxide layer and having a higher hydrogen concentration than the upper oxide layer.
In Article 1, The electronic device having a second oxide semiconductor layer with higher mobility than the first oxide semiconductor layer.
In Article 2, The above second oxide semiconductor layer is an electronic device comprising indium tin gallium zinc oxide.
In Paragraph 3, The above first oxide semiconductor layer comprises indium gallium zinc oxide or indium gallium oxide in an electronic device.
In Article 2, The above second oxide semiconductor layer is an electronic device in contact with the above upper oxide layer.
In Article 5, An electronic device in which the thickness of the upper oxide layer is lower than the thickness of the nitride layer.
In Article 6, An electronic device having an upper oxide layer with a thickness of 200 Å or less.
In Article 1, The above circuit element layer further comprises a plurality of lower patterns disposed below the first oxide semiconductor layer, in an electronic device.
In Article 8, Any one of the above lower patterns is an electronic device connected to the first oxide semiconductor layer.
In Article 8, Any one of the above lower patterns is an electronic device constituting a capacitor included in the pixel driving unit.
In Article 8, It further includes a buffer layer disposed between the above lower patterns and the first oxide semiconductor layer, and The above buffer layer is, Lower buffer oxide layer; An upper buffer oxide layer disposed between the lower buffer oxide layer and the first oxide semiconductor layer; and An electronic device comprising a buffer nitride layer disposed between the lower buffer oxide layer and the upper buffer oxide layer.
In Article 11, An electronic device in which the thickness of the above nitride layer is less than or equal to the thickness of the above buffer nitride layer.
In Article 1, The above nitride layer is an electronic device comprising silicon nitride or silicon oxynitride.
Display panel; A processor that outputs data to the above display panel; and It includes a power module that provides power to the above-mentioned display panel, and The above display panel is, Light-emitting element; A pixel driving unit connected to the above-mentioned light-emitting element and including a first transistor; Scan driving unit including a second transistor; A gate line connecting the pixel driving unit and the scan driving unit; A data line connected to the pixel driving unit and insulatingly intersecting with the gate line; and It includes a plurality of insulating layers, The above insulating layers are, A first insulating layer disposed below the first semiconductor layer of the first transistor; and It includes a second insulating layer disposed between the first semiconductor layer and the first gate of the first transistor, and Each of the above first insulating layer and the above second insulating layer is, Lower oxide layer; An upper oxide layer disposed on the lower oxide layer; and An electronic device comprising a nitride layer disposed between the lower oxide layer and the upper oxide layer.
In Article 14, The second semiconductor layer of the second transistor is disposed on the second insulating layer, and An electronic device comprising a material having a higher mobility than the first semiconductor layer in the second semiconductor layer.
In Article 15, The second semiconductor layer comprises indium tin gallium zinc oxide, and The above first semiconductor layer comprises an indium gallium zinc oxide or indium gallium oxide in an electronic device.
In Article 14, It further includes a plurality of lower patterns disposed below the first insulating layer, and The above first semiconductor layer is provided in multiple numbers, and Any one of the above lower patterns is an electronic device connected to the first semiconductor layer.
In Article 17, The upper oxide layer of the second insulating layer is in contact with the second semiconductor layer. An electronic device in which the thickness of the upper oxide layer of the second insulating layer is about 200 Å or less.
In Article 14, The insulating layer further includes a gate insulating layer disposed between the second semiconductor layer and the second gate of the second transistor, and The above gate insulating layer is an electronic device disposed between the above second insulating layer and the above first gate.
A step of forming a plurality of lower conductive patterns on a substrate; A step of sequentially stacking a first lower oxide layer, a first nitride layer, and a first upper oxide layer on the lower conductive patterns to form a first insulating layer; A step of forming a first semiconductor layer on the first insulating layer; A step of forming a second insulating layer by sequentially stacking a second lower oxide layer, a second nitride layer, and a second upper oxide layer on the first insulating layer; A step of forming a second semiconductor layer on the second insulating layer; A step of forming a first gate overlapping the first semiconductor layer and a second gate overlapping the second semiconductor layer; A step of forming a third insulating layer covering the first gate and the second gate; and A method for manufacturing an electronic device comprising the step of forming a plurality of connecting electrodes on the third insulating layer.

Description

ELECTRONIC APPARATUS AND METHOD OF MANUFACTURING THE SAME The present invention relates to an electronic device and a method for manufacturing the same, and more specifically, to an electronic device including a display panel with improved display characteristics and a method for manufacturing the same. Multimedia electronic devices such as televisions, mobile phones, tablet computers, navigation systems, and game consoles may include a display device for displaying images. The display device may include a plurality of pixels, and each pixel may include a light-emitting element that generates light and a driving element connected to the light-emitting element. Display devices equipped with organic light-emitting diodes among light-emitting devices are attracting attention as next-generation display devices due to their advantages such as wide viewing angles, fast response speeds, and low power consumption. However, as display devices become larger in area and higher in resolution, driving devices with improved characteristics are required. FIG. 1a is a perspective view of an electronic device according to one embodiment of the present invention. FIG. 1b is a block diagram of an electronic device according to one embodiment of the present invention. FIG. 2 is a diagram illustrating an exemplary cross-section of an electronic device shown in FIG. 1a. FIG. 3 is a drawing exemplarily illustrating a cross-section of the display panel shown in FIG. 2. Figure 4 is a block diagram of the electronic device shown in Figure 1. FIG. 5 is an equivalent circuit diagram of any one of the pixels according to one embodiment of the present invention. FIGS. 6a and FIGS. 6b are cross-sectional views of a display panel according to one embodiment of the present invention. FIGS. 7a to 7e are graphs illustrating changes in the characteristics of a semiconductor layer according to the thickness of an insulating layer according to an embodiment of the present invention. FIGS. 8a to 8i are cross-sectional views illustrating a method for manufacturing a display panel according to an embodiment of the present invention. FIG. 9 is a block diagram of an electronic device according to one embodiment. FIG. 10 is a schematic diagram of an electronic device according to various embodiments. In this specification, where a component (or region, layer, part, etc.) is described as being "on," "connected," or "combined" with another component, it means that it may be directly placed/connected/combined with the other component, or that a third component may be placed between them. Identical reference numerals denote identical components. Additionally, in the drawings, the thicknesses, proportions, and dimensions of the components are exaggerated for the effective illustration of the technical content. "And/or" includes all one or more combinations that the associated configurations can define. Terms such as "first," "second," etc., may be used to describe various components, but said components should not be limited by said terms. These terms are used solely for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be named the second component, and similarly, the second component may be named the first component. A singular expression includes a plural expression unless the context clearly indicates otherwise. Additionally, terms such as "below," "lower side," "above," and "upper side" are used to describe the relationships between the components depicted in the drawings. These terms are relative concepts and are described based on the directions indicated in the drawings. Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as generally understood by those skilled in the art to which the present invention pertains. Additionally, terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and may be explicitly defined herein unless interpreted in an ideal or overly formal sense. Terms such as "include" or "have" are intended to indicate the existence of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and should be understood as not precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof. Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1a is a perspective view of an electronic device according to one embodiment of the present invention. FIG. 1b is a block diagram of an electronic device according to one embodiment of the present invention. The present invention will be described with reference to FIG. 1a and FIG. 1b. As illustrated in FIG. 1a, the electronic device (DD) may inclu