KR-20260065513-A - ADHESIVE FILM FOR SEMICONDUCTOR WITH ANTI ELECTROSTATIC DISCHARGE FUNCTION

Abstract

The present invention provides a semiconductor adhesive film having an antistatic function, wherein a base layer comprising a polyester-based compound, a conductive layer comprising a conductive polymer compound, and an adhesive layer comprising a silicon-based compound are sequentially laminated, and the semiconductor adhesive film has a surface potential of 0.001 kV to 0.8 kV on the surface of the adhesive layer when a voltage of 10 kV is applied in the plane direction of the adhesive layer.

Inventors

• 이지문
• 이규완
• 양승영
• 조한빈
• 하태용
• 도상길
• 이창우

Assignees

• 율촌화학 주식회사

Dates

Publication Date

20260508

Application Date

20251014

Priority Date

20241030

Claims (12)

1. A base layer containing a polyester compound, A conductive layer comprising a conductive polymer compound and A semiconductor adhesive film having sequentially laminated adhesive layers containing a silicon-based compound, The semiconductor adhesive film described above is a semiconductor adhesive film having an antistatic function in which, when a voltage of 10 kV is applied in the plane direction of the adhesive layer, the surface potential of the surface of the adhesive layer is 0.001 kV to 0.8 kV.
2. In claim 1, The semiconductor adhesive film described above is a semiconductor adhesive film having an antistatic function, wherein the time for the surface potential of the adhesive layer surface, which is first measured when a voltage of 10 kV is applied in the plane direction of the adhesive layer, to be reduced by half is 0.5 sec to 200 sec.
3. In claim 1, A semiconductor adhesive film having an antistatic function, wherein the above polyester compound comprises one or more selected from the group consisting of polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polytrimethylene terephthalate (PTT), polycyclohexylene dimethylene terephthalate (PCDT), and polycaprolactone (PCL).
4. In claim 1, A semiconductor adhesive film having an antistatic function, wherein the above silicon-based compound is derived from an organopolysiloxane of Chemical Formula 1 below or its derivative and a hydrogen siloxane copolymer of Chemical Formula 2 below or its derivative constituent unit. [Chemical Formula 1] Here, R1 and R8 are each independently selected from the group consisting of hydrogen, alkyl and alkenyl, R2 to R7 are either hydrogen or alkyl, and n1 is an integer from 5 to 200,000. [Chemical Formula 2] Here, at least one of the above R 9 to R 18 is hydrogen, and in R 9 to R 18 Except for the hydrogen portion, the remainders are each independently alkyl, and n2 is an integer from 1 to 200, and n3 is an integer from 1 to 100.
5. In claim 1, A semiconductor adhesive film having an antistatic function, wherein the molar ratio of the vinyl group included in the organopolysiloxane of Formula 1 or its derivative and the Si-H group of the hydrogen siloxane copolymer of Formula 2 or its derivative is 1:1 to 3.
6. In claim 1, A semiconductor adhesive film having an antistatic function, wherein the conductive polymer compound comprises one or more selected from the group consisting of poly(3,4-ethylenedioxythiophene) (PEDOT):polystyrenesulfonic acid (PSS) (PEDOT:PSS), polyaniline (PANI), polypyrrole (PPy), polythiophene (PT), poly(3-hexylthiophene) (P3HT), and poly(paraphenylene vinylene) (PPV).
7. In claim 6, The above conductive polymer compound is poly(3,4-ethylenedioxythiophene) (PEDOT) : polystyrenesulfonic acid (PSS) (PEDOT:PSS), and A semiconductor adhesive film having an antistatic function, wherein the molar ratio of the above PEDOT to PSS is 1.5 to 2.3:1.
8. In claim 1, A semiconductor adhesive film having an antistatic function, wherein the conductive layer further comprises a cyclic amine-based compound.
9. In claim 8, A semiconductor adhesive film having an antistatic function, wherein the above-mentioned cyclic amine compound comprises one or more selected from the group consisting of aziridine, azetidine, pyrrolidine, piperidine, azepane, and azocane.
10. In claim 1, The above semiconductor adhesive film is a semiconductor adhesive film having a peeling electrostatic voltage of 0.01kV to 0.5kV when peeled off after adhesion to a wafer.
11. In claim 1, The above semiconductor adhesive film is a semiconductor adhesive film having an antistatic function having a dielectric loss of 0.02 to 0.1 under conditions of 25 ℃ and 10 GHz.
12. In claim 1, The above semiconductor adhesive film is a semiconductor adhesive film having an antistatic function having a dielectric constant of 2.8 to 3.3 under conditions of 25 ℃ and 10 GHz.

Description

Adecipherable film for semiconductor adhesive with antistatic function The present invention relates to a semiconductor adhesive film comprising an antistatic function. Recently, there has been an even greater demand for thinning and miniaturization of semiconductor devices and their packages. As wafer thicknesses decrease to 100 μm or less, various functions are being added to films used for protecting or securing wafers, in addition to their adhesive strength. For example, this includes preventing static electricity from being conducted on the wafer. This is essential, in particular, for reducing wafer damage that may occur during semiconductor processes. These films are designed to account for wafer surface non-uniformity and can prevent wafer breakage by enhancing durability against external stress. Furthermore, semiconductor adhesive films must maintain stable performance under various environmental conditions and be able to operate without deformation at high and low temperatures. In addition, as semiconductor wafers become thinner, electrostatic chucks (ESCs) are utilized to effectively secure them. An electrostatic chuck is a device used to secure wafers in the semiconductor manufacturing process; it fixes the wafer using electrical force and, unlike conventional methods such as physical clamps or vacuum suction, minimizes damage caused by contact and provides uniform fixing force. In particular, wafer fixing technology utilizing electrostatic chucks is effective in minimizing physical damage and providing uniform fixing force. However, since the wafer surface may be degraded by static electricity if the electrostatic chuck is fixed directly to the wafer, physical properties of the film that can adhere to the wafer while reacting with the electrostatic chuck are required. The adhesive film used in this process must generally be designed with a multilayer structure. Such films must minimize the occurrence of burrs or bubbles that may arise during the semiconductor process, and must be able to be cleanly removed without residue after the precision processing of the wafer is completed. Various studies are currently underway to maintain these functions while enabling the wafer to adhere to the electrostatic chuck and preventing wafer degradation caused by the voltage generated by the chuck. FIG. 1 is a cross-sectional view of a semiconductor adhesive film according to one embodiment of the present invention. Figure 2 is a measurement photograph taken during the measurement of Experimental Example 3. Figure 3 is a measurement photograph taken during the measurement of Experimental Example 5. Hereinafter, various embodiments of the present invention are described with reference to the accompanying drawings. The present invention is not limited to specific embodiments and should be understood to include various modifications, equivalents, and/or alternatives of the embodiments of the present invention. In relation to the description of the drawings, similar reference numerals may be used for similar components. In this document, expressions such as "have," "can have," "include," or "can include" refer to the existence of the relevant feature (e.g., numerical values, functions, actions, or components, etc.) and do not exclude the existence of additional features. In this document, expressions such as “A or B,” “at least one of A or/and B,” or “one or more of A or/and B” may include all possible combinations of items listed together. For example, “A or B,” “at least one of A and B,” or “at least one of A or B” may refer to cases including (1) at least one A, (2) at least one B, or (3) both at least one A and at least one B. As used in this document, the expression "configured to" may be replaced, depending on the context, with, for example, "suitable for," "having the capacity to," "designed to," "adapted to," "made to," or "capable of." The term "configured to" does not necessarily mean "specifically designed to." The terms used in this document are used merely to describe specific embodiments and are not intended to limit the scope of other embodiments. Singular expressions may include plural expressions unless the context clearly indicates otherwise. Terms used herein, including technical or scientific terms, may have the same meaning as generally understood by those skilled in the art described in this document. Terms used in this document that are defined in general dictionaries may be interpreted as having the same or similar meaning as they have in the context of the relevant technology, and are not to be interpreted in an ideal or overly formal sense unless explicitly defined in this document. In some cases, even terms defined in this document may not be interpreted to exclude the embodiments of this document. The embodiments disclosed in this document are presented for the purpose of explaining and understanding the disclosed technical content and are not intended to limit the scope of the invention