KR-20260065529-A - METHOD AND APPARATUS FOR DEPOSITING A CARBON-CONTAINING MATERIAL

Abstract

A method for filling a gap on a substrate with a carbon-containing material is disclosed. An exemplary method comprises the steps of providing a substrate containing the gap into a reaction chamber and performing a plurality of deposition cycles. Each deposition cycle comprises the steps of providing a first precursor in gaseous form into the reaction chamber and providing a reaction species into the reaction chamber, wherein the first precursor comprises carbon.

Inventors

• 페르뷔르트 레너 헨리쿠스 요제프
• 보루데 란짓
• 블랑까르 티모시
• 이만 압델라우이
• 로메로 파트리시오 에뒤아르도
• 아리나 탈만타이테
• 포어 빌자미

Assignees

• 에이에스엠 아이피 홀딩 비.브이.

Dates

Publication Date

20260508

Application Date

20251027

Priority Date

20241030

Claims (20)

1. A method for filling a gap on a substrate with a carbon-containing material, wherein the method comprises: A step of providing a substrate including a gap into a reaction chamber; and The step of executing multiple deposition cycles, wherein each deposition cycle is, A step of providing a first precursor in gaseous form into the reaction chamber; and The step of providing a reactive species into the reaction chamber, wherein The above first precursor comprises carbon, method.
2. A method according to claim 1, further comprising the step of providing a second precursor in gaseous form into the reaction chamber during each deposition cycle.
3. A method according to claim 1 or 2, wherein the reactive species is generated by plasma from the reactant gas.
4. A method according to any one of claims 1 to 3, wherein the reactive species comprises at least one compound selected from the group consisting of argon, argon atoms, argon plasma, and argon radicals.
5. A method according to any one of claims 1 to 4, wherein the reactive species is formed immediately on the substrate.
6. A method according to any one of claims 1 to 4, wherein the reactive species is generated far from the substrate.
7. In claim 6, a method of generating the reactive species using a remote plasma generator.
8. A method comprising, in any one of claims 1 to 7, an annealing step.
9. In claim 8, the annealing step comprises UV annealing or thermal annealing.
10. A method according to any one of claims 1 to 9, wherein the carbon-containing material comprises silicon carbonitride.
11. A method according to any one of claims 1 to 9, wherein the carbon-containing material comprises carbonitride.
12. A method according to any one of claims 1 to 11, wherein the first precursor is selected from the group consisting of tris(dimethylamino)silane (3DMAS), tetrakis(dimethylamino)silane (4DMAS), bis(dimethylamino)methylsilane (BDMAS), pyridine, trisilane, N'-[(disylamino)silyl]-N,N-disylsilanediamine, bis(dimethylamino)dimethylsilane, silanediamine, 1-trimethylsilyl-1,2,4-triazole and N,N'-disylsilanediamine.
13. A method according to any one of claims 1 to 12, wherein the second precursor comprises a heterocyclic amine.
14. In claim 13, a method wherein one or more of the carbon atoms in the heterocyclic amine are bonded to a methyl group or an amino group.
15. In claim 13, the method wherein the heterocyclic amine comprises one or more amine groups.
16. In paragraph 13, the method wherein the heterocyclic amine comprises oxygen.
17. In claim 13, the method wherein the heterocyclic amine has a cyclic structure.
18. A method according to any one of claims 1 to 17, wherein the carbon-containing material is formed on a three-dimensional structure.
19. A method according to any one of claims 1 to 18, wherein the reactive species is continuously supplied into the reactor.
20. A method according to any one of claims 2 to 18, wherein the first precursor and the second precursor are continuously supplied into the reactor.

Description

Method and apparatus for depositing a carbon-containing material The present disclosure generally relates to the field of semiconductor processing methods and systems and the field of integrated circuit manufacturing. In particular, a method and system for forming a carbon-containing layer are disclosed. For example, significant improvements in the speed and density of integrated circuits have been achieved through the scaling of semiconductor devices, such as logic and memory devices. However, conventional device scaling technology faces major challenges at the future technological crossroads. For example, one challenge was to find a suitable method to fill gaps such as depressions, trenches, vias, etc. with material without forming any gaps or voids. All discussions, including the problems and solutions presented in this section, are incorporated into this disclosure solely for the purpose of providing context for the present disclosure. Such discussions should not be construed as an acknowledgment that any or all information was known at the time the present invention was made or otherwise constitutes prior art. The content of the present invention is provided to introduce selected concepts in a simplified form. These concepts are described in more detail in the following detailed description of exemplary embodiments of the present disclosure. This summary is not intended to distinguish the principal or essential features of the claimed subject matter, nor is it intended to limit the scope of the claimed subject matter. Various embodiments of the present disclosure relate to a method for filling a gap, a structure and an apparatus formed using said method, and an apparatus for performing said method and/or forming said structure and/or apparatus. The layers may be used in various applications. For example, they may be used in the field of integrated circuit manufacturing. Accordingly, a method for filling a gap on a substrate with a carbon-containing material is described herein. The method comprises the steps of providing a substrate containing a gap into a reaction chamber and performing a plurality of deposition cycles. Each deposition cycle comprises the steps of providing a first precursor in gaseous form into the reaction chamber and providing a reactive species into the reaction chamber plasma. The first precursor comprises carbon. In some embodiments, the method further includes the step of providing a second precursor in gaseous form into a reaction chamber during each deposition cycle. In some embodiments, reactive species are generated from the reactant gas by plasma. In some embodiments, the reactive species comprises at least one compound selected from the group consisting of argon, argon atoms, argon plasma, and argon radicals. In some embodiments, reactive species are generated directly on the substrate. In some embodiments, reactive species are generated away from the substrate. In some embodiments, a remote plasma generator is used for generating reactive species. In some embodiments, the method further includes an annealing step. In some embodiments, the annealing step includes UV annealing or thermal annealing. In some embodiments, the carbon-containing material includes silicon carbonitride. In some embodiments, the carbon-containing material includes carbonitride. In some embodiments, the first precursor is selected from the group consisting of tris(dimethylamino)silane (3DMAS), tetrakis(dimethylamino)silane (4DMAS), bis(dimethylamino)methylsilane (BDMAS), pyridine, trisilane, N'-[(disylamino)silyl]-N,N-disylsilanediamine, bis(dimethylamino)dimethylsilane, silanediamine, 1-trimethylsilyl-1,2,4-triazole and N,N'-disylsilanediamine. In some embodiments, the second precursor comprises a heterocyclic amine. In some embodiments, one or more carbon atoms of the heterocyclic amine are bonded to a methyl group or an amino group. In some embodiments, the heterocyclic amine comprises one or more amine groups. In some embodiments, the heterocyclic amine comprises oxygen. In some embodiments, the heterocyclic amine has a cyclic structure. In some embodiments, the silicon-containing layer is formed on a three-dimensional structure. In some embodiments, the reactive species are continuously supplied into the reactor. In some embodiments, the first precursor and the second precursor are continuously supplied into the reactor. In some embodiments, one of the precursors is supplied continuously into the reactor, and one of the precursors is supplied into the reactor in pulses. In some embodiments, one of the first precursor or the second precursor is supplied continuously into the reactor, and the other of the first precursor or the second precursor is supplied into the reactor in pulses. In another aspect of the present invention, a semiconductor processing apparatus is described. The apparatus comprises: a reaction chamber including a substrate support for supporting a substrate; a heater configure