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KR-20260065540-A - TARGET MATERIAL AND LAMINATED BODY

KR20260065540AKR 20260065540 AKR20260065540 AKR 20260065540AKR-20260065540-A

Abstract

(Problem) Provides a target material suitable for forming an adhesion layer that has excellent adhesion to a substrate and also has excellent etchability when ferric chloride is used. (Solution) The target material contains Ni and Cr as elements, and additionally contains at least one of Al and Zn, and when the total of Ni, Cr, Al, and Zn is 100 at%, it contains Cr: 4 to 14 at%, at least one of Al and Zn: a total of 4 to 16 at%, and the remainder consists of Ni and unavoidable impurities.

Inventors

  • 도츠카 준

Assignees

  • 다이도 토쿠슈코 카부시키가이샤

Dates

Publication Date
20260508
Application Date
20251029
Priority Date
20241101

Claims (7)

  1. In the case where it contains Ni and Cr as elements, additionally contains at least one of Al and Zn, and the sum of these Ni, Cr, Al, and Zn is 100 at%, Cr: 4∼14at% A target material comprising at least one of Al and Zn: containing 4 to 16 at% in total, with the remainder consisting of Ni and unavoidable impurities.
  2. In paragraph 1, A target material having a Cr content of 7 to 13 at% when the total of Ni, Cr, Al, and Zn is 100 at%.
  3. In paragraph 1 or 2, A target material in which the sum of the contents of Al and Zn is 7 to 13 at% when the sum of Ni, Cr, Al, and Zn is 100 at%.
  4. A substrate, an adhesive layer formed on the substrate, and a conductive layer formed on the adhesive layer. The above adhesion layer is, In the case where it contains Ni and Cr as elements, additionally contains at least one of Al and Zn, and the sum of these Ni, Cr, Al, and Zn is 100 at%, Cr: 4∼14at% A laminate comprising at least one of Al and Zn: containing 4 to 16 at% in total, with the remainder consisting of Ni and unavoidable impurities.
  5. In paragraph 4, A laminate in which the Cr content is 7 to 13 at% when the total of Ni, Cr, Al, and Zn is 100 at%.
  6. In paragraph 4 or 5, A laminate in which the total content of Al and Zn is 7 to 13 at% when the total of Ni, Cr, Al, and Zn is 100 at%.
  7. In paragraph 4 or 5, A laminate having the conductive layer having a seed layer formed on the adhesion layer and an electroplated layer formed on the seed layer.

Description

Target Material and Laminated Body This invention relates to a laminate having a target material and an adhesive layer formed using the target material. Flexible wiring boards having wiring patterns formed on a resin film substrate are used in liquid crystal panels, notebook PCs, digital cameras, mobile phones, etc. This flexible wiring board is manufactured using a copper clad laminate (laminated board) having a resin film substrate (substrate) and a copper film layer (conductive layer) laminated on at least one side of the resin film substrate. In such a laminate, it is necessary to secure a certain adhesion force between the resin film substrate and the copper film layer, and for example, in Patent Document 1 below, a base metal layer (adhesion layer) made of a Ni-Ti-Cr alloy is formed between the resin film substrate and the copper film layer. FIG. 1 is a drawing showing a laminate having an adhesive layer according to one embodiment of the present invention. Figure 2 is a drawing showing another example of a laminate shown in Figure 1. (Form for carrying out the invention) Next, an example of an embodiment of the present invention will be described in detail. <1. Laminated structure> In FIG. 1, 10 represents an example of a laminate of an embodiment of the present invention. This laminate (10) comprises a substrate (12), an adhesive layer (14) formed on the substrate (12), and a conductive layer (16) formed on the adhesive layer (14). The substrate (12) may be glass such as soda-lime glass, and may also be a resin material such as polyethylene terephthalate (PET), polypropylene (PP), polystyrene (PS), polyvinyl chloride (PVC), polycarbonate (PC), polymethyl methacrylate (PMMA), or polyimide (PI). The conductive layer (16) is preferably a highly conductive material with an electrical resistivity of 8.0 μΩ·cm or less, and such materials may include pure Cu, Cu alloy, pure Al, Al alloy, etc. In this embodiment, the conductive layer (16) is composed of a seed layer (17) formed by a sputtering method and an electroplated layer (18) having the seed layer (17) as a conductive path. The electroplated layer (18) is formed, for example, by electrolytic plating or electroless plating. Next, the adhesion layer (14) will be described. The adhesion layer (14) is a layer of Ni-based alloy interposed between the substrate (12) and the conductive layer (16) to ensure adhesion between the substrate (12) and the conductive layer (16). The adhesion layer (14) contains Ni and Cr as elements, and additionally contains at least one of Al and Zn. In addition, the adhesion layer (14) may contain unavoidable impurities. The reasons for limiting each chemical component in the adhesion layer (14) are explained below. Ni is the basic element of the adhesion layer (14). Ni can secure a certain degree of adhesion to the substrate (12) and also allows for etching by ferric chloride. Therefore, in order to satisfy both adhesion and etchability, it is optimal to make the adhesion layer (14) a Ni-based alloy. Cr: 4∼14at% Cr is an element effective for improving the heat resistance of the adhesion layer (14). However, increasing the content of Cr improves heat resistance but lowers etchability. For this reason, in this embodiment, the content of Cr is specified as 4 to 14 at%. Preferably, it is 7 to 13 at%. At least one of Al and Zn: 4–16 at% in total Al and Zn are both elements effective for improving the adhesion of the adhesion layer (14). As Al or Zn diffuses into the substrate (12), the adhesion between the substrate (12) and the adhesion layer (14) is improved. In this embodiment, only one of Al or Zn may be included, or both may be included. However, while increasing the content of Al and Zn improves adhesion, etchability conversely decreases. For this reason, in this embodiment, the total content of Al and Zn is specified as 4 to 16 at%. Preferably, it is 7 to 13 at%. When forming a film on one side of a substrate (12) with the adhesion layer (14) configured in this manner, a sputtering method can be suitably used. Specifically, balanced magnetron sputtering, unbalanced magnetron sputtering, and ion plating methods may be used. Since the composition of the adhesion layer (14) formed by non-reactive sputtering is almost identical to the composition of the target material for sputtering, forming the film using a target material for sputtering with the same composition as the adhesion layer (14) is superior in terms of manufacturability. Then, after forming an adhesion layer (14) on a substrate (12), a seed layer (17) formed by sputtering and an electroplated layer (18) formed by electrolytic plating or electroless plating can be formed to manufacture a laminate (10) as shown in FIG. 1. The laminate (10) shown in FIG. 1 is actually further processed and used as an element of various parts (e.g., a flexible wiring board). The laminate (10B) shown in FIG. 2 represents the laminate after processing. In the laminate (10B) after processi