KR-20260065588-A - PLASMA PROCESSING APPARATUS AND SUBSTRATE PROCESSING SYSTEM

Abstract

The disclosed plasma processing apparatus comprises a chamber, a substrate support, an edge ring, a lift mechanism, a plasma generating unit, and a bias power source. The substrate support is disposed within the chamber. The lift mechanism is configured to move the edge ring up and down relative to the substrate support. The substrate support includes a base electrically coupled to the bias power source and/or the high-frequency power source of the plasma generating unit, and an electrostatic chuck on the base. The lift mechanism comprises a conductive ring and a connecting member, wherein the conductive ring is electrically coupled to the edge ring while supporting the edge ring loaded thereon. The connecting member is configured to maintain an electrical connection between the conductive ring and the base as the edge ring and the conductive ring move by the lift mechanism.

Inventors

• 마츠모토 나오키
• 나카무라 사토루
• 이시카와 마나부
• 사토 히로키
• 이마하시 다쿠미
• 구마가이 유키
• 오이카와 쇼
• 구로다 료

Assignees

• 도쿄엘렉트론가부시키가이샤

Dates

Publication Date

20260508

Application Date

20240808

Priority Date

20230929

Claims (19)

1. chamber and, A substrate support disposed within the above chamber, and An edge ring having conductivity and arranged to surround a substrate on the substrate support, and A lift mechanism configured to move the above edge ring up and down, and A plasma generating unit comprising a high-frequency power source and configured to generate plasma within the chamber, and A bias power source configured to generate an electric bias to introduce ions from the plasma to the substrate on the substrate support above, and The above substrate support is, An expectation electrically coupled to the above bias power supply and/or the above high-frequency power supply, and Power outage check above the expectation Includes, The above lift mechanism is, A conductive ring that is electrically coupled to the edge ring while supporting the edge ring loaded thereon, and A rod extending vertically from below the above-mentioned challenge ring, and An actuator configured to move the edge ring up and down through the rod and the conductive ring, and A connecting member that provides an electrical connection between the conductive ring and the expectation, and is configured to maintain the electrical connection according to the movement of the conductive ring. including, Plasma processing device.
2. In paragraph 1, The above connecting member is a plasma processing device capable of deforming according to the movement of the conductive ring.
3. In paragraph 2, A plasma processing apparatus comprising the above-mentioned connecting member, a bellows, a contact band, or a tubular member having a plurality of slits formed on its side wall surface so as to be elastically deformable in the longitudinal direction.
4. In any one of paragraphs 1 through 3, The above-mentioned rod is a plasma processing device having insulating properties.
5. In any one of paragraphs 1 through 3, A plasma treatment device in which an exposed area on the surface of the above-mentioned conductive ring is covered by a film having resistance to the plasma.
6. In any one of paragraphs 1 through 3, The above edge ring is an upper edge ring, and The plasma processing device further comprises a lower edge ring on which the upper edge ring is disposed, and The above electrostatic chuck is, A first part having a substrate support surface, and A ring support surface extending at a position lower than the substrate support surface, and a second part extending outwardly to the first part. Includes, The first portion includes a sidewall surface extending between the substrate support surface and the ring support surface, and The lower edge ring is disposed along the side wall surface and also on the ring support surface, Plasma processing device.
7. In paragraph 6, The lower edge ring above is, An inner section arranged along the above-mentioned side wall, and An outer periphery extending outward in the radial direction with respect to the inner periphery above, on which the upper edge ring is disposed, and An intermediate portion extending between the inner periphery and the outer periphery, and interposed between the edge of the substrate on the substrate support surface and the inner circumferential surface of the upper edge ring. including, Plasma processing device.
8. In paragraph 6, The above lower edge ring is a plasma processing device having conductivity.
9. In paragraph 6, The above lower edge ring is an insulating plasma processing device.
10. In paragraph 6, A plasma processing apparatus further comprising another lifting mechanism configured to lift the upper edge ring or a ring set including the upper edge ring and the lower edge ring from the electrostatic chuck.
11. In any one of paragraphs 1 through 3, A plasma processing apparatus further comprising a switch configured to switch between a first state in which the edge ring and the expectation are electrically coupled to each other and a second state in which the edge ring and the expectation are electrically separated from each other.
12. In Paragraph 11, A plasma processing device, wherein the lift mechanism is the converter and is configured to form the second state by lowering the conductive ring by the actuator to separate the conductive ring from the edge ring.
13. In Paragraph 11, The above-mentioned switch is a plasma processing device comprising a switching element connected between the connecting member and the conductive ring or between the connecting member and the support.
14. In Paragraph 11, A plasma processing device comprising another lift mechanism configured to form the second state by lifting the edge ring from the conductive ring.
15. In Paragraph 11, A plasma processing apparatus further comprising a control unit configured to control the converter to form the first state or the second state according to a read recipe.
16. In Paragraph 11, A measuring device configured to measure the etching depth of a substrate on the substrate support portion, and A control unit configured to control the switch to switch from the second state to the first state when the etching depth measured by the measuring instrument reaches a threshold. A plasma treatment device further equipped with
17. The plasma treatment device described in paragraph 10, and A return module including a return chamber and a return robot connected to the above-mentioned plasma processing device, and A ring stocker configured to accommodate the upper edge ring or the upper edge ring and the ring set therein, and control unit Equipped with, The control unit is configured to control the other lift mechanism and the conveying robot, and to exchange the upper edge ring or the ring set within the chamber of the plasma processing device with the upper edge ring or the ring set within the ring stoker through the conveying chamber. Substrate processing system.
18. The plasma treatment device described in paragraph 11, and An imaging device configured to acquire an image of a substrate etched by the above plasma processing device, and control unit Equipped with, A substrate processing system configured such that the control unit, when the roundness of a hole in the edge region of the substrate in the image of the substrate processed first is below a threshold, controls the switch to form the first state when etching is subsequently performed on the substrate in the plasma processing device.
19. The plasma treatment device described in paragraph 11, and A measuring instrument configured to measure the thickness of the sediment of the edge ring above, and control unit Equipped with, The control unit is configured to control the switch to form the second state when the thickness of the deposit is less than the threshold during cleaning treatment in the chamber, and to form the first state when the thickness of the deposit is greater than the threshold. Substrate processing system.

Description

Plasma Processing Apparatus and Substrate Processing System An exemplary embodiment of the present disclosure relates to a plasma processing apparatus and a substrate processing system. A plasma processing apparatus is used for plasma processing of a substrate. The plasma processing apparatus includes a chamber and a substrate support. The substrate support is disposed within the chamber. The substrate support includes a stand and an electrostatic chuck. A bias power source is connected to the stand to generate an electric bias for introducing ions from the plasma into the substrate. The electrostatic chuck is configured to support the substrate and an edge ring surrounding the substrate. Patent Document 1 below discloses a plasma processing apparatus configured to move the edge ring up and down. Figure 1 is a diagram illustrating an example of the configuration of a plasma processing system. Figure 2 is a diagram illustrating an example of the configuration of an inductively coupled plasma processing device. FIG. 3 is a drawing illustrating a substrate support and a lift mechanism according to one exemplary embodiment. FIG. 4 is a drawing illustrating a substrate support and a lift mechanism of another exemplary embodiment. FIG. 5 is a drawing illustrating a substrate processing system according to one exemplary embodiment. FIG. 6 is also a drawing illustrating a substrate support and a lift mechanism according to another exemplary embodiment. FIG. 7 is also a drawing illustrating a substrate support and a lift mechanism according to another exemplary embodiment. FIG. 8 is also a drawing illustrating a substrate support and a lift mechanism according to another exemplary embodiment. FIG. 9 is also a drawing illustrating a substrate support and a lift mechanism relating to another exemplary embodiment. FIG. 10 is a diagram illustrating an example of the configuration of a capacitance-coupled plasma processing device. FIG. 11 is also a drawing illustrating a substrate support and a lift mechanism relating to another exemplary embodiment. FIG. 12 is also a drawing illustrating a substrate support and a lift mechanism according to another exemplary embodiment. FIG. 13 is also a drawing illustrating a substrate support and a lift mechanism according to another exemplary embodiment. FIG. 14 is a flowchart illustrating a plasma treatment method according to one exemplary embodiment. FIG. 15 (a) is a drawing illustrating an example of an imaging device used with a plasma processing device according to various exemplary embodiments, and FIG. 15 (b) is a drawing illustrating an example of a measuring device used with a plasma processing device according to various exemplary embodiments. FIG. 16 is a flowchart illustrating a plasma treatment method according to another exemplary embodiment. FIG. 17 is also a flowchart illustrating a plasma treatment method regarding another exemplary embodiment. FIG. 18 is a drawing illustrating an example of a measuring instrument used with a plasma processing apparatus according to various exemplary embodiments. FIG. 19 is also a drawing illustrating an edge ring and a conductive ring according to another exemplary embodiment. FIG. 20 is also a drawing illustrating an edge ring and a conductive ring according to another exemplary embodiment. FIG. 21 is also a drawing illustrating a substrate support and a lift mechanism according to another exemplary embodiment. Figure 22 is a graph showing the experimental results. FIG. 23 is a drawing illustrating a substrate support and a lift mechanism according to one exemplary embodiment. Hereinafter, various exemplary embodiments will be described in detail with reference to the drawings. In addition, identical or equivalent parts in each drawing are denoted by the same reference numerals. FIG. 1 is a drawing for explaining an example configuration of a plasma processing system. In one or more embodiments, the plasma processing system includes a plasma processing device (1) and a control unit (2). The plasma processing system is an example of a substrate processing system, and the plasma processing device (1) is an example of a substrate processing device. The plasma processing device (1) includes a plasma processing chamber (10), a substrate support (11), and a plasma generation unit (12). The plasma processing chamber (10) has a plasma processing space. Additionally, the plasma processing chamber (10) has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas discharge port for discharging gas from the plasma processing space. The gas supply port is connected to a gas supply unit (20) described later, and the gas discharge port is connected to an exhaust system (40) described later. The substrate support member (11) is disposed within the plasma processing space and has a substrate support surface for supporting the substrate. The plasma generation unit (12) is configured