Search

KR-20260065690-A - MASK FOR DEPOSITION, DEPOSITION APPARATUS INCLUDING THE SAME, METHOD OF MANUFACTURING THE MASK FOR DEPOSITION, METHOD OF MANUFACTURING DISPLAY DEVICE, AND ELECTRONIC DEVICE

KR20260065690AKR 20260065690 AKR20260065690 AKR 20260065690AKR-20260065690-A

Abstract

According to an embodiment of the present invention, a deposition mask comprises a base substrate, a first silicon layer covering at least a portion of the base substrate, a second silicon layer disposed on the base substrate and the first silicon layer, and a plurality of cell opening regions spaced apart from each other. A plurality of first opening patterns are defined that overlap each of the plurality of cell opening regions and penetrate the second silicon layer in a third direction, and one or more second opening patterns are defined that overlap the plurality of cell opening regions and penetrate the base substrate and the first silicon layer in a third direction. The second silicon layer comprises a first portion spaced apart from the base substrate in a third direction and a second portion in contact with a portion of the base substrate.

Inventors

  • 김성운

Assignees

  • 삼성디스플레이 주식회사

Dates

Publication Date
20260511
Application Date
20241101

Claims (20)

  1. Base substrate; A first silicon layer covering at least a portion of the base substrate; A second silicon layer disposed on the base substrate and the first silicon layer; and It includes a plurality of cell opening regions spaced apart from each other, and A plurality of first opening patterns are defined that overlap each of the plurality of cell opening regions and penetrate the second silicon layer in a third direction, and One or more second opening patterns penetrating the base substrate and the first silicon layer in the third direction, which overlap the plurality of cell opening regions, are defined, and The second silicon layer is a deposition mask comprising a first portion spaced apart from the base substrate in the third direction and a second portion in contact with a part of the base substrate.
  2. In Article 1, A deposition mask in which the thermal expansion coefficient of the second silicon layer is greater than the thermal expansion coefficient of the base substrate.
  3. In Article 2, The first portion includes a first_a portion and a first_b portion arranged symmetrically with respect to the third direction, and The second portion is a deposition mask comprising a second portion extending from the first portion and a second portion extending from the first portion.
  4. In Paragraph 3, The above base substrate is, It includes a part a that overlaps with the first_a part and a part b that overlaps with the second_a part, A deposition mask in which the thermal expansion direction of the above-mentioned b-part is opposite to the thermal expansion direction of the above-mentioned 1_a-part.
  5. In Paragraph 4, A deposition mask in which the degree of thermal expansion of the above-mentioned b-part is smaller than the degree of thermal expansion of the above-mentioned 1_a-part.
  6. In Paragraph 3, A deposition mask comprising a trench that overlaps with the plurality of cell opening regions and is recessed in a first direction intersecting the third direction or in the opposite direction of the first direction.
  7. In Article 6, The above trench is, A first trench that is indented in the opposite direction of the first direction and corresponds to the first_a portion; and A deposition mask comprising a second trench that is indented in the first direction and corresponds to the first_b portion.
  8. In Article 6, A deposition mask in which the trench overlaps with the first portion in the third direction, but does not overlap with the first opening patterns in the third direction.
  9. In Article 1, A deposition mask in which the first silicon layer comprises silicon oxide and the second silicon layer comprises silicon nitride.
  10. A deposition source configured to supply a deposition material; A deposition apparatus comprising a deposition mask having at least one opening through which the deposition material passes, The above deposition mask is, Base substrate; A first silicon layer covering at least a portion of the base substrate; A second silicon layer disposed on the base substrate and the first silicon layer; and It includes a plurality of cell opening regions spaced apart from each other, and A plurality of first opening patterns are defined that overlap each of the plurality of cell opening regions and penetrate the second silicon layer in a third direction, and One or more second opening patterns penetrating the base substrate and the first silicon layer overlapping the plurality of cell opening regions in the third direction are defined, and The deposition apparatus for the second silicon layer comprises a first portion spaced apart from the base substrate in the third direction and a second portion in contact with a portion of the base substrate.
  11. A step of forming a first silicon layer on a base substrate and patterning the first silicon layer to form first to third units corresponding to each of the first to third cell opening regions; A step of forming a second silicon layer on the base substrate and the first silicon layer; A step of patterning the second silicon layer to form first preliminary opening patterns in each of the first to third cell opening regions; A step of removing at least a portion of each of the second silicon layer and the base layer so that the back surface of the first silicon layer is exposed; and A method for manufacturing a deposition mask comprising the step of removing the first to third units.
  12. In Article 11, The step of removing the first to third units above is, A method for manufacturing a deposition mask using a wet etching process.
  13. In Article 12, A method for manufacturing a deposition mask in which the thermal expansion coefficient of the second silicon layer is greater than the thermal expansion coefficient of the base substrate.
  14. In Article 13, The second silicon layer comprises a first portion spaced apart from the base substrate in a third direction and a second portion in contact with a portion of the base substrate. The first portion includes a first_a portion and a first_b portion arranged symmetrically with respect to the third direction, and A method for manufacturing a deposition mask comprising the above-mentioned second portion, a second_a portion extending from the above-mentioned first_a portion and a second_b portion extending from the above-mentioned first_b portion.
  15. In Article 14, The above base substrate is, It includes a part a that overlaps with the first_a part and a part b that overlaps with the second_a part, A method for manufacturing a deposition mask in which the thermal expansion direction of the above-mentioned part b is opposite to the thermal expansion direction of the above-mentioned part 1_a.
  16. In Article 15, A method for manufacturing a deposition mask in which the degree of thermal expansion of the above-mentioned b-part is smaller than the degree of thermal expansion of the above-mentioned 1_a-part.
  17. In Article 14, A method for manufacturing a deposition mask comprising a trench that overlaps with any one of the first to third cell opening regions and is recessed in a first direction intersecting the third direction or in a direction opposite to the first direction.
  18. In Article 17, In the step of removing the first to third units, A method for manufacturing a deposition mask in which any one of the first to third units is removed and the trench is formed.
  19. Step of forming a pixel circuit layer on a substrate; and The method includes the step of forming a light-emitting element on the pixel circuit layer, The step of forming the above-mentioned light-emitting element includes the step of depositing a light-emitting layer using a deposition apparatus, and The above deposition device is, Base substrate; A first silicon layer covering at least a portion of the base substrate; A second silicon layer disposed on the base substrate and the first silicon layer; and It includes a plurality of cell opening regions spaced apart from each other, and A plurality of first opening patterns are defined that overlap each of the plurality of cell opening regions and penetrate the second silicon layer in a third direction, and One or more second opening patterns penetrating the base substrate and the first silicon layer overlapping the plurality of cell opening regions in the third direction are defined, and A method for manufacturing a display device comprising a deposition mask in which the second silicon layer comprises a first portion spaced apart from the base substrate in the third direction and a second portion in contact with a portion of the base substrate.
  20. processor; and It includes a display device comprising pixels, configured to display an image on the pixels according to the control of the processor, and The above-described display device is an electronic device manufactured according to the manufacturing method of claim 19.

Description

Mask for deposition, deposition apparatus including the same, method of manufacturing the mask for deposition, method of manufacturing a display device, and electronic device The present invention relates to a deposition mask, a deposition apparatus including the same, a method for manufacturing a deposition mask, a method for manufacturing a display device, and an electronic device. Organic light emitting display devices can be used in mobile devices such as smartphones, computers, and tablet personal computers, or in electronic devices such as televisions, outdoor billboards, and display screens. An organic light-emitting display device may include an anode electrode, a cathode electrode disposed on a substrate, and an organic light-emitting layer interposed between the anode electrode and the cathode electrode. The organic light-emitting layer may be formed using a deposition mask. FIG. 1 is a plan view illustrating a deposition mask according to embodiments of the present invention. FIG. 2 is a drawing showing an example of a deposition apparatus including the deposition mask of FIG. 1. Figure 3 is a side view showing the first region of Figure 2. Figure 4 is a schematic diagram showing the appearance of a deposition mask changing due to thermal expansion according to an embodiment. FIG. 5 is a drawing for explaining a pixel according to embodiments of the present invention. FIG. 6 is a cross-sectional view for illustrating a display panel including the pixels of FIG. 5. FIGS. 7 to 13 are drawings for explaining a manufacturing method for manufacturing a deposition mask of FIG. 1. FIG. 14 is a drawing showing a deposition mask manufactured according to an embodiment of the present invention. FIG. 15 is a plan view showing a display device according to an embodiment. FIG. 16 is a plan view showing a subpixel according to an embodiment. Figure 17 is a cross-sectional view taken along line II' of Figure 16. FIG. 18 is a flowchart illustrating a method for manufacturing a display device according to an embodiment. FIG. 19 is a block diagram showing an example of an electronic device including the display device of FIG. 17. FIG. 20 is a perspective view showing an example of a smartphone that can be implemented using the electronic device of FIG. 19. FIG. 21 is a perspective view showing an example of a tablet computer that can be implemented using the electronic device of FIG. 19. Hereinafter, preferred embodiments according to the present invention will be described in detail with reference to the accompanying drawings. It should be noted that in the following description, only the parts necessary for understanding the operation according to the present invention are described, and the description of other parts is omitted to avoid obscuring the gist of the present invention. Furthermore, the present invention is not limited to the embodiments described herein and may be embodied in other forms. However, the embodiments described herein are provided merely to explain in detail sufficient for a person skilled in the art to easily implement the technical concept of the present invention. Throughout the specification, when a part is described as being "connected" to another part, this includes not only cases where they are "directly connected," but also cases where they are "indirectly connected" with other elements interposed between them. The terms used herein are intended to describe specific embodiments and are not intended to limit the invention. Throughout the specification, when a part is described as "comprising" a certain component, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components. "At least one of X, Y, and Z" and "at least one selected from the group consisting of X, Y, and Z" may be interpreted as one X, one Y, one Z, or any combination of two or more of X, Y, and Z (e.g., XYZ, XYY, YZ, ZZ). Here, "and/or" includes all combinations of one or more of such components. Herein, terms such as first, second, etc. may be used to describe various components, but these components are not limited to these terms. These terms are used to distinguish one component from another. Accordingly, the first component may refer to the second component without departing from what is disclosed herein. Spatially relative terms, such as "below" and "above," may be used for descriptive purposes to explain the relationship between one element or feature and other element(s) or feature(s) as depicted in the drawings. Spatially relative terms are intended to include different directions during use, operation, and/or manufacturing in addition to the directions depicted in the drawings. For example, if the device depicted in the drawings is inverted, elements described as being located "below" other elements or features are located in the direction "above" of other elements or features. Thus, in one embodiment, the term "below" may include both dir