KR-20260065780-A - PLASMA PROCESSING APPARATUS

Abstract

The disclosed plasma processing apparatus comprises a plasma processing chamber, a substrate support portion disposed within the plasma processing chamber and having a substrate support area and a ring support area surrounding the substrate support area, an edge ring disposed on the ring support area, a ring bias electrode disposed on the ring support area and having a plurality of electrical contacts arranged in a circumferential direction, a voltage pulse generator configured to generate a voltage pulse signal, and a power supply line connecting the voltage pulse generator and the ring bias electrode, wherein the power supply line comprises an annular conductive member, a common line connecting the annular conductive member and the voltage pulse generator, and a plurality of branch lines extending radially from the annular conductive member and each connected to a plurality of electrical contacts of the ring bias electrode.

Inventors

• 하야사카 유스케
• 사사키 아츠시
• 마츠모토 가즈야
• 다카하시 신고
• 나가미 고이치

Assignees

• 도쿄엘렉트론가부시키가이샤

Dates

Publication Date

20260511

Application Date

20260427

Priority Date

20210527

Claims (20)

1. Plasma treatment chamber; A substrate support member disposed within the plasma processing chamber and having a substrate support region and a ring support region surrounding the substrate support region; An edge ring disposed on the above ring support area; A ring bias electrode disposed in the ring support area and having a plurality of electrical contacts arranged in a circumferential direction; A voltage pulse generator configured to generate a voltage pulse signal; and It includes a power supply line connecting the above voltage pulse generator and the above ring bias electrode, The above power supply line is, Lack of fantasy challenge; A common line connecting the above-mentioned annular conductive member and the above-mentioned voltage pulse generator; and A plasma processing apparatus comprising a plurality of branch lines extending radially from the above-mentioned annular conductive member and each connected to the plurality of electrical contacts of the above-mentioned ring bias electrode.
2. In claim 1, A plasma processing apparatus comprising a substrate support including a support and an electrostatic chuck, wherein the ring bias electrode is disposed on the electrostatic chuck.
3. In claim 1, A plasma processing apparatus further comprising a substrate bias electrode disposed in the substrate support region.
4. In claim 3, A plasma processing apparatus further comprising an additional voltage pulse generator connected to the substrate bias electrode and configured to generate an additional voltage pulse signal.
5. In claim 4, A plasma processing apparatus comprising a substrate support member including a support and an electrostatic chuck, wherein the substrate bias electrode and the ring bias electrode are disposed on the electrostatic chuck.
6. In claim 5, A plasma processing device further comprising a high-frequency power source connected to the above-mentioned expectation and configured to generate high-frequency power.
7. In claim 1, A plasma processing device, wherein each of the above plurality of branch lines includes a socket and a feed pin, and the feed pin is inserted into the socket.
8. In claim 7, A plasma processing device in which the above-mentioned feed pin has flexibility in its diameter direction.
9. In claim 1, A plasma processing device in which the above plurality of branch lines have substantially the same length.
10. Substrate support area; A ring support region surrounding the above substrate support region; An edge ring disposed on the above ring support area; A ring bias electrode disposed in the ring support area and having a plurality of electrical contacts arranged in a circumferential direction; and It includes a power supply line connecting the power source and the ring bias electrode, and The above power supply line is, Lack of fantasy challenge; A common line connecting the above-mentioned circular conductive member and the above-mentioned power source; and A substrate support member comprising a plurality of branch lines extending radially from the above-mentioned annular conductive member and each connected to the plurality of electrical contacts of the above-mentioned ring bias electrode.
11. In claim 10, The substrate support comprises a support and an electrostatic chuck, and the ring bias electrode is disposed on the electrostatic chuck.
12. In claim 10, A substrate support member further comprising a substrate bias electrode disposed in the substrate support area.
13. In claim 12, The substrate support comprises a base and an electrostatic chuck, wherein the substrate bias electrode and the ring bias electrode are disposed on the electrostatic chuck.
14. In claim 10, Each of the above plurality of branch lines includes a socket and a feed pin, and the feed pin is inserted into the socket, forming a substrate support.
15. In claim 14, The above feed pin is a substrate support having flexibility in its diameter direction.
16. In claim 10, The above plurality of branch lines have substantially the same length, forming a substrate support.
17. Lack of fantasy challenge; A common line connecting the above-mentioned circular conductive member and the power supply; and A power supply structure comprising a plurality of branch lines extending radially from the above-mentioned annular conductive member and connected to an annular electrode.
18. In claim 17, A power supply structure in which each of the above plurality of branch lines includes a socket and a power supply pin, and the power supply pin is inserted into the socket.
19. In claim 18, The above-mentioned feed pin is a feed structure having flexibility in its diameter direction.
20. In claim 17, A power supply structure in which the above plurality of branch lines have substantially the same length.

Description

Plasma Processing Apparatus An exemplary embodiment of the present disclosure relates to a plasma processing apparatus. A plasma processing apparatus is used for plasma processing of a substrate. U.S. Patent Application Publication No. 2004/0261946 discloses a type of plasma processing apparatus. The plasma processing apparatus described in U.S. Patent Application Publication No. 2004/0261946 comprises a chamber, a substrate support, and a high-frequency power source. The substrate support is provided within the chamber. The substrate support is configured to support a substrate and an edge ring. The high-frequency power source is configured to supply high-frequency power to generate plasma from a gas supplied within the chamber. The present disclosure provides a technology for stably supplying a pulse of voltage, which is bias energy, to an edge ring. In one exemplary embodiment, a plasma processing apparatus is provided. The plasma processing apparatus comprises a chamber, an electrostatic chuck, a first power supply line, and a second power supply line. The electrostatic chuck includes a first region on which a substrate is placed and a second region on which an edge ring is placed. The first region includes a first electrode provided therein. The second region includes a second electrode provided therein. The first power supply line connects the first electrode to a bias power source that generates a pulse of voltage applied to the first electrode. The second power supply line connects the second electrode to the bias power source or another bias power source that generates a pulse of voltage applied to the second electrode. The second power supply line includes one or more sockets and one or more power supply pins. One or more power supply pins are flexible in the radial direction and are fitted into one or more sockets. According to one exemplary embodiment, it is possible to stably supply a pulse of voltage, which is bias energy, to the edge ring. FIG. 1 is a schematic diagram showing a plasma processing apparatus according to one exemplary embodiment. FIG. 2 is a cross-sectional view of a substrate support portion of a plasma processing apparatus according to one exemplary embodiment. FIG. 3 is a partial enlarged cross-sectional view of a substrate support portion of a plasma processing apparatus according to one exemplary embodiment. FIG. 4 is a figure showing a feed pin and a socket that can be employed in a plasma processing apparatus according to one exemplary embodiment. FIG. 5 is a plan view showing a second feed line of a plasma processing apparatus according to one exemplary embodiment. Figure 6 is a figure showing the experimental results. Various exemplary embodiments are described below. In one exemplary embodiment, a plasma processing apparatus is provided. The plasma processing apparatus comprises a chamber, an electrostatic chuck, a first feed line, and a second feed line. The electrostatic chuck includes a first region on which a substrate is placed and a second region on which an edge ring is placed. The first region includes a first electrode provided therein. The second region includes a second electrode provided therein. The first feed line connects the first electrode to the first electrode and a bias power source that generates a pulse of voltage applied to the first electrode. The second feed line connects the second electrode to the bias power source or another bias power source that generates a pulse of voltage applied to the second electrode. The second feed line includes one or more sockets and one or more feed pins. One or more feed pins are flexible in the radial direction and are fitted into one or more sockets. Each of the one or more feed pins of the second feed line is flexible in the diameter direction, so it is compressed by being inserted into a corresponding socket. Accordingly, each of the one or more feed pins of the second feed line is supported by a corresponding socket and makes secure contact with the corresponding socket. Therefore, according to the above embodiment, it is possible to stably supply a pulse of voltage, which is bias energy, to the edge ring. In one exemplary embodiment, the second power supply line may include a plurality of sockets as one or more sockets, and may include a plurality of power supply pins as one or more power supply pins, each inserted into a plurality of sockets. The second power supply line may include a common line and a plurality of branch lines. The branch lines branch off from the common line and are connected to the second electrode. Each of the plurality of branch lines includes one of the plurality of sockets and one of the plurality of power supply pins. In one exemplary embodiment, the first power supply line may include a socket and a power supply pin. The power supply pin of the first power supply line may be flexible in the diametrical direction and may be fitted into the socket of the first power supply line. I