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KR-20260065841-A - Method for processing a substrate and method for manufacturing a substrate

KR20260065841AKR 20260065841 AKR20260065841 AKR 20260065841AKR-20260065841-A

Abstract

The method for treating a substrate of the present invention comprises a preparation process for preparing a substrate having a first surface having silicon nitride and a surface modification process for forming a protective film that protects the first surface, wherein the surface modification process comprises a gas exposure treatment in which a modification gas containing a gas of a surface modification agent is brought into contact with a first surface in a heated state within a substrate holding space, and the surface modification agent has a predetermined carboxylic acid silyl ester.

Inventors

  • 오쿠무라 유조
  • 와타나베 겐타
  • 요시우라 가즈키
  • 데루이 요시하루

Assignees

  • 샌트랄 글래스 컴퍼니 리미티드

Dates

Publication Date
20260511
Application Date
20240826
Priority Date
20230907

Claims (15)

  1. A preparation process for preparing a substrate having a first surface having silicon nitride, and It includes a surface modification process for forming a protective film that protects the first surface, and The above surface modification process includes a gas exposure treatment in which a modification gas containing a surface modification agent gas is brought into contact with the first surface in a heated state within a substrate holding space. The above surface modifier has at least one silicon compound represented by the following general formula (1), Method of processing the record. (X-COO) a -Si-R b (1) (Among the above general formula (1), X represents, respectively, a hydrogen atom, or a hydrocarbon group having 1 to 8 carbon atoms in which some or all of the hydrogen atoms may be substituted with halogen atoms, and R represents, respectively, a hydrogen atom, or a hydrocarbon group having 1 to 8 carbon atoms in which some or all of the hydrogen atoms may be substituted with halogen atoms, and a and b each represent an integer between 1 and 3. Note that a+b=4.
  2. In Article 1, The above preparation process prepares the substrate having the first surface and the second surface having silicon oxide, and The surface modification process described above forms a protective film on at least the first surface that selectively protects the first surface with respect to the second surface by means of a gas exposure treatment in which the modification gas is brought into contact with the first surface and the second surface in a heated state within the substrate holding space. Method of processing the record.
  3. In Article 1, A method for treating a substrate, wherein, in the above surface modification process, the water contact angle of the first surface at 25° after the gas exposure treatment is 55° or greater.
  4. In Article 2, In the above surface modification process, when the water contact angle of the first surface at 25°C after the gas exposure treatment is denoted as CA1 and the water contact angle of the second surface at 25°C is denoted as CA2 , A method for processing a substrate in which CA 1 and CA 2 satisfy 1 < CA 1 / CA 2 ≤ 5.
  5. In Article 1 or Article 2, A method for treating a substrate, wherein the surface temperature of the substrate during the above gas exposure treatment is 50°C or higher and 400°C or lower.
  6. In Article 1 or Article 2, A method for treating a substrate, wherein the temperature of the reforming gas introduced into the above-mentioned substrate holding space is 0°C or higher and 400°C or lower.
  7. In Article 1 or Article 2, A treatment method according to the above, wherein the concentration of the silicon compound in the reforming gas is 1 volume% or more and 100 volume% or less.
  8. In Article 1 or Article 2, A treatment method of the above, wherein the boiling point of the silicon compound in the above reforming gas is 40°C or higher and 400°C or lower.
  9. In Article 1 or Article 2, A method for processing the above, wherein the reforming gas comprises an inert gas of 0 volume% or more and 99 volume% or less.
  10. In Article 1 or Article 2, A method for treating a substrate, wherein the pressure of the substrate holding space during the above gas exposure treatment is 1 Pa or more and 10⁶ Pa or less.
  11. In Article 1 or Article 2, A method for treating a substrate, wherein the surface modification process comprises a gas replacement treatment that introduces an inert gas into the substrate holding space at least before and after the gas exposure treatment.
  12. In Article 1 or Article 2, The above surface modification process is a method for treating a substrate, comprising a pretreatment to remove the natural oxide film of the first surface before the gas exposure treatment.
  13. In Article 1 or Article 2, A method for treating a substrate, comprising a processing process including one or more selected from the group consisting of etching treatment and film formation treatment after the above surface modification process.
  14. In Article 1 or Article 2, A treatment method of the above, wherein the silicon compound is trimethylsilyltrifluoroacetate and/or trimethylsilylacetate.
  15. A method for manufacturing a substrate, comprising a process for obtaining a substrate in which each process in the method for processing a substrate described in claim 1 or 2 is performed.

Description

Method for processing a substrate and method for manufacturing a substrate The present invention relates to a method for processing a substrate and a method for manufacturing a substrate. Conventionally, fine patterning has been achieved through multiple lithography or etching processes to obtain semiconductor devices. However, recently, semiconductor devices have tended to become more highly integrated and miniaturized, and there is a problem that lithography processes tend to become complex and costly in order to satisfy these demands, so alternative technologies to lithography technology are required. As an alternative technology to lithography technology, a technology using a self-assembled monolayer (SAM) is being considered. Specifically, the technology involves selectively depositing a self-assembled monolayer (hereinafter simply referred to as "monolayer") as a mask material or protective material in an area of the substrate that is not to be treated, and then forming or depositing a desired film material or performing an etching treatment on the remaining area of the substrate (i.e., the area to be treated). A method is being investigated to selectively perform etching treatment, etc., only on the silicon oxide surface of a wafer having a silicon nitride surface and a silicon oxide surface using the above-mentioned monolayer. As a technology of this type, the technology described in Patent Document 1 is known. Patent Document 1 describes a dry treatment in which a substrate containing a silicon oxide film and a silicon nitride film is exposed to a plasma-excited passivation gas containing carbon, sulfur, or both, thereby forming a passivation layer thicker on the silicon nitride film than on the silicon oxide film. FIG. 1 is a process cross-sectional view schematically illustrating each process of the processing method of the present embodiment. Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, in all drawings, like components are given like reference numerals, and descriptions are omitted as appropriate. Furthermore, the drawings are schematic diagrams and do not correspond to actual dimensional ratios. An overview of the processing method of the description in this embodiment is explained. The method for processing a substrate of the first embodiment comprises a preparation process for preparing a substrate having a first surface having silicon nitride, and The surface modification process includes a surface modification process for forming a protective film that protects a first surface, wherein the surface modification process includes a gas exposure treatment in which a modified gas containing a surface modification agent gas is brought into contact with a first surface in a heated state within a substrate holding space. A method for treating a substrate according to a second embodiment comprises a preparation process for preparing a substrate having a first surface having silicon nitride and a second surface having silicon oxide, and a surface modification process for forming a protective film on at least the first surface that selectively protects the first surface with respect to the second surface by a gas exposure treatment in which a modification gas containing a surface modification agent gas is brought into contact with the first surface and the second surface in a heated state within a substrate holding space. In both the first and second embodiments, the surface modifier has at least one silicon compound represented by the general formula (1) described below (hereinafter referred to as a carboxylic acid silyl ester). According to the findings of the inventors, in the first embodiment, the frequency of contact with the surface modifier can be increased by dry treatment, the diffusivity of the surface modifier can be increased by making the first surface in a heated state, and the reactivity can be increased by using a carboxylic acid silyl ester as the surface modifier, so that the base site originating from the N element becomes a reaction catalyst. Therefore, it was found that the protective properties of the first surface having silicon nitride can be increased. Furthermore, since the dry treatment increases the frequency of contact between the surface modifier and both the first and second surfaces, it acts in a direction that reduces the selective protection of the first surface. However, in the second embodiment, when the second surface having silicon oxide is heated, even if the carboxylic acid silyl ester used as a surface modifier is initially contacted or adsorbed on the second surface, it becomes difficult to maintain the adsorption state. Moreover, unlike the first surface, there are almost no base sites originating from the N element that can act as a reaction catalyst for the carboxylic acid silyl ester, so the protective properties on the second surface are suppressed compared to the first surface. In other