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KR-20260065854-A - Raw material for forming a thin film, thin film, method for manufacturing a thin film, and lanthanum compound

KR20260065854AKR 20260065854 AKR20260065854 AKR 20260065854AKR-20260065854-A

Abstract

A raw material for forming a thin film containing a lanthanum compound represented by the following general formula (1) is provided. [Chemical Formula 1] (In the above general formula (1), R1 , R3 , R4 , R6 , R7 , and R9 each independently represent an aliphatic hydrocarbon group having 1 to 8 carbon atoms or a heteroatom-containing hydrocarbon group having 1 to 8 carbon atoms, and R2 , R5 , and R8 each independently represent an alkyl group with 1 to 3 hydrogen atoms or carbon atoms. However, lanthanum compounds in which R1 and R3 , R4 and R6 , and R7 and R9 are all identical groups, and R2 , R5 , and R8 are all identical groups are excluded.

Inventors

  • 하타세 마사코
  • 후쿠시마 료타
  • 니시다 아키히로
  • 야마시타 아츠시

Assignees

  • 가부시키가이샤 아데카

Dates

Publication Date
20260511
Application Date
20240821
Priority Date
20230904

Claims (9)

  1. A raw material for forming a thin film containing a lanthanum compound represented by the following general formula (1). (In general formula (1), R1 , R3 , R4 , R6 , R7 and R9 each independently represent an aliphatic hydrocarbon group having 1 to 8 carbon atoms or a heteroatom-containing hydrocarbon group having 1 to 8 carbon atoms, and R2 , R5 , and R8 each independently represent an alkyl group with 1 to 3 hydrogen atoms or carbon atoms. However, lanthanum compounds in which R1 and R3 , R4 and R6 , and R7 and R9 are all identical groups, and R2 , R5 , and R8 are all identical groups are excluded.
  2. In Article 1, The above-mentioned raw material for forming a thin film is a raw material for forming a thin film that is for atomic layer deposition.
  3. In Article 1 or Article 2, A raw material for forming a thin film, wherein one or two of R1, R3 , R4 , R6 , R7 , and R9 are each independently selected from sec-butyl group, 1-methylbutyl group, 1-dimethylamino-2-propyl group, and 1-methoxy-2-butyl group, four or five of R1 , R3 , R4 , R6 , R7 , and R9 are isopropyl groups, and all of R2 , R5 , and R8 are hydrogen atoms.
  4. In Article 1 or Article 2, The above lanthanum compound is a raw material for forming a thin film, selected from No. 91, No. 97, No. 99, No. 109, No. 111 and No. 113.
  5. A thin film manufactured using a raw material for forming a thin film as described in claim 1 or 2.
  6. A method for manufacturing a thin film, comprising forming a thin film containing lanthanum atoms using a raw material for forming a thin film as described in claim 1 or 2.
  7. In Article 6, A method for manufacturing a thin film, comprising decomposing a lanthanum compound in a raw material gas obtained by vaporizing the raw material for forming the thin film, or reacting the lanthanum compound with a reactive gas to form a thin film containing lanthanum atoms.
  8. In Article 7, A precursor thin film formation process in which a raw material gas obtained by vaporizing the above-mentioned raw material for forming a thin film is introduced into a film formation chamber equipped with a gas, and a precursor thin film is formed on the surface of the gas; A method for manufacturing a thin film, comprising a thin film formation process of introducing a reactive gas into a thin film formation chamber and reacting the precursor thin film with the reactive gas to form a thin film containing lanthanum atoms.
  9. A lanthanum compound represented by the following general formula (2). (In general formula (2), R 10 represents an aliphatic hydrocarbon group having 4 or more carbon atoms or 8 or fewer carbon atoms, or a heteroatom-containing hydrocarbon group having 4 or more carbon atoms or 8 or fewer carbon atoms, R 12 , R 13 , and R 15 each independently represent an aliphatic hydrocarbon group having 1 to 4 carbon atoms or a heteroatom-containing hydrocarbon group having 1 to 4 carbon atoms, and R 11 and R 14 each independently represent an alkyl group with 1 to 3 hydrogen atoms or carbon atoms, and X represents 1 or 2. However, R 10 and R 12 , and R 13 and R 15 are identical, and also Lanthanum compounds in which R 11 and R 14 are of the same origin are excluded.)

Description

Raw material for forming a thin film, thin film, method for manufacturing a thin film, and lanthanum compound The present disclosure relates to a raw material for forming a thin film containing a lanthanum compound having a specific structure, a thin film produced using said raw material, a method for producing a thin film, and a lanthanum compound. Thin film forming raw materials containing lanthanum atoms are used as materials for manufacturing DRAM gates, logic transistors, etc. Methods for manufacturing thin films containing lanthanum atoms (hereinafter referred to as "lanthanum-containing thin films") include sputtering, ion plating, MOD (Metal Organic Decomposition) methods such as coating pyrolysis or sol-gel methods, and chemical vapor deposition. Among these, chemical vapor deposition (hereinafter referred to as "CVD (Chemical Vapor Deposition) method") and atomic layer deposition (hereinafter referred to as "ALD (Atomic Layer Deposition) method") are the optimal manufacturing processes, as they possess many advantages such as excellent compositional controllability, excellent step coverage, suitability for mass production, and the ability to perform hybrid integration. Various lanthanum compounds are known as raw materials for forming thin films containing lanthanum. For example, Patent Document 1 discloses a lanthanoid complex in which an amidinate ligand and a cyclopentadienyl group are coordinated, Patent Document 2 discloses a lanthanum compound in which a ketoimin ligand and an alkoxy group are coordinated, and Patent Documents 3 to 5 disclose lanthanamidinate compounds. FIG. 1 is a schematic diagram showing an example of an ALD apparatus used in a method for manufacturing a thin film, which is an embodiment of the present disclosure. FIG. 2 is a schematic diagram showing another example of an ALD apparatus used in a method for manufacturing a thin film, which is an embodiment of the present disclosure. FIG. 3 is a schematic diagram showing another example of an ALD apparatus used in a method for manufacturing a thin film, which is an embodiment of the present disclosure. FIG. 4 is a schematic diagram showing another example of an ALD apparatus used in a method for manufacturing a thin film, which is an embodiment of the present disclosure. A. Raw materials for thin film formation The raw material for forming a thin film of the present disclosure is described. A1. Lanthanum compounds represented by general formula (1) The raw material for forming a thin film of the present disclosure may contain at least one type of lanthanum compound represented by the following general formula (1), and may contain two or more types. [Chemical Formula 4] In general formula (1), R1 , R3 , R4 , R6 , R7 , and R9 each independently represent an aliphatic hydrocarbon group having 1 to 8 carbon atoms or a heteroatom-containing hydrocarbon group having 1 to 8 carbon atoms, and R2 , R5 , and R8 each independently represent an alkyl group with 1 to 3 hydrogen atoms or carbon atoms. However, lanthanum compounds in which R1 and R3 , R4 and R6 , and R7 and R9 are all identical groups, and R2 , R5 and R8 are all identical groups are excluded. In this specification, “identical groups” indicates that two groups bonded to the nitrogen atom of an amidinate ligand are identical to two groups bonded to the nitrogen atom of another amidinate ligand, and “all identical groups” indicates that when there are three combinations of the two groups, all of them are identical. For example, if R1 and R3 are different entities, the fact that R1 and R3 and R4 and R6 are the same entity indicates that R1 is the same entity as either R4 or R6 , and R3 is the same entity as the other R4 or R6 . If R1 and R3 are the same entity, the fact that R1 and R3 and R4 and R6 are the same entity indicates that R1 , R3 , R4 , and R6 are all the same entity. If R1 and R3 are different entities, the fact that R1 and R3 , R4 and R6 , and R7 and R9 are all identical entities indicates that R1 is identical to either R4 or R6 , R3 is identical to the other R4 or R6 , and also that R1 is identical to either R7 or R9 , and R3 is identical to the other R7 or R9 . If R1 and R3 are identical entities, the fact that R1 and R3 , R4 and R6, and R7 and R9 are all identical entities indicates that R1 , R3 , R4 , R6 , R7 , and R9 are all identical entities. Among the general formula (1), the aliphatic hydrocarbon groups with 1 to 8 carbon atoms represented by R1 , R3 , R4 , R6 , R7 , and R9 include, for example, saturated hydrocarbon groups with 1 to 8 carbon atoms, unsaturated hydrocarbon groups with 2 to 8 carbon atoms, and alicyclic hydrocarbon groups with 3 to 8 carbon atoms. The above-mentioned saturated hydrocarbon group represents an aliphatic hydrocarbon group that does not have a cyclic structure and does not have unsaturated bonds (double or triple bonds) between carbon-carbon atoms, and may be a straight chain or have branches. Examples of the above-mentioned